VISHAY 10MQ040-M3

VS-10MQ040-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 1 A
FEATURES
• Low forward voltage drop
Cathode
Anode
• Guard ring for enhanced ruggedness and long
term reliability
• Halogen-free according to IEC 61249-2-21
definition
SMA
• Small foot print, surface mountable
• High frequency operation
PRODUCT SUMMARY
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Package
SMA
IF(AV)
1A
VR
40 V
VF at IF
0.49 V
IRM
26 mA at 125 °C
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
TJ max.
150 °C
Diode variation
Single die
EAS
3.0 mJ
The VS-10MQ040-M3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
VALUES
UNITS
1
A
DC
VRRM
IFSM
tp = 5 μs sine
VF
1.5 Apk, TJ = 125 °C
TJ
Range
40
V
120
A
0.56
V
- 55 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VS-10MQ040-M3
UNITS
40
V
VR
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 4
SYMBOL
IF(AV)
TEST CONDITIONS
VALUES
50 % duty cycle at TL = 123 °C, rectangular waveform
On PC board 9 mm2 island
(0.013 mm thick copper pad area)
1.5
50 % duty cycle at TL = 132 °C, rectangular waveform
On PC board 9 mm2 island
(0.013 mm thick copper pad area)
1
Following any rated
load condition and with
rated VRRM applied
UNITS
A
Maximum peak one cycle
non-repetitive surge current
See fig. 6
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 1 A, L = 6 mH
3.0
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1.0
A
Repetitive avalanche current
Revision: 22-Aug-11
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
120
A
30
Document Number: 93358
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10MQ040-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
1A
Maximum forward voltage drop
See fig. 1
VFM (1)
TJ = 25 °C
1.5 A
1A
TJ = 125 °C
1.5 A
Maximum reverse leakage current
See fig. 2
Threshold voltage
IRM
VF(TO)
Forward slope resistance
rt
Typical junction capacitance
CT
Typical series inductance
Maximum voltage rate of change
LS
dV/dt
TJ = 25 °C
VR = Rated VR
TJ = 125 °C
TJ = TJ maximum
VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz
Measured lead to lead 5 mm from package body
Rated VR
VALUES
UNITS
0.54
0.62
V
0.49
0.56
0.5
mA
26
0.36
V
104
m
38
pF
2.0
nH
10 000
V/μs
VALUES
UNITS
- 55 to 150
°C
80
°C/W
Note
(1) Pulse width = 300 μs, duty cycle = 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to ambient
RthJA
TEST CONDITIONS
DC operation
Approximate weight
Marking device
Case style SMA (similar D-64)
0.07
g
0.002
oz.
1F
Note
(1)
dP tot
1
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dT J R thJA
Revision: 22-Aug-11
Document Number: 93358
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10MQ040-M3
www.vishay.com
Vishay Semiconductors
1
0.1
0.2
IR - Reverse Current (mA)
Allowable Case Temperature (°C)
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
150
140
DC
130
120
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
110
100
90
Square wave (D = 0.50)
80 % rated VR applied
80
See note (1)
70
0.4
0.6
1.0
0.8
1.2
1.4
1.6
0
0.4
0.8
1.2
1.6
2.4
2.0
VFM - Forward Voltage Drop (V)
IF(AV) - Average Forward Current (A)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
100
1.4
10
1.2
Average Power Loss (W)
IF - Instantaneous Forward
Current (A)
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 75 °C
0.01
TJ = 50 °C
0.001
TJ = 25 °C
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
1.0
RMS limit
0.8
DC
0.6
0.4
0.2
0
0.0001
5
10
15
20
25
30
35
40
0.4
0.8
1.2
1.6
2.0
2.4
VR - Reverse Voltage (V)
IF(AV) - Average Forward Current (A)
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
CT - Junction Capacitance (pF)
100
TJ = 25 °C
10
0
0
5
10
15
20
25
30
35
40
IFSM - Non-Repetitive Surge Current (A)
0
100
At any rated load condition and
with rated VRRM applied
following surge
10
10
100
1000
10 000
VR - Reverse Voltage (V)
tp - Square Wave Pulse Duration (µs)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 6 - Maximum Peak Surge Forward Current vs.
Pulse Duration
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
(1)
Revision: 22-Aug-11
Document Number: 93358
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10MQ040-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
10
M
Q
040
-M3
1
2
3
4
5
6
1
-
Vishay Semiconductors product suffix
2
-
Current rating
3
-
M = SMA
4
-
Q = Schottky “Q” series
5
-
Voltage rating (040 = 40 V)
6
-
Environmental digit:
-M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-10MQ040-M3/5AT
PREFERRED PACKAGE CODE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
5AT
7500
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95400
Part marking information
www.vishay.com/doc?95403
Packaging information
www.vishay.com/doc?95404
Revision: 22-Aug-11
Document Number: 93358
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
SMA
DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.066 (1.68)
MIN.
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 95400
Revision: 09-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected]ay.com, [email protected]
www.vishay.com
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Disclaimer
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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