TIS93 E TO-92 BC PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 40 VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 800 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units TIS93 625 5.0 83.3 mW mW/°C °C/W 200 °C/W TIS93 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 40 V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, I E = 0 40 V V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µA, IC = 0 5.0 V I CBO Collector Cutoff Current VCB = 20 V, IE = 0 100 nA I EBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 100 nA ON CHARACTERISTICS* hFE DC Current Gain VCE( sat) Collector-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA VBE( on) Base-Emitter On Voltage VCE = 2.0 V, I C = 50 mA *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% VCE = 2.0 V, I C = 50 mA 100 0.6 300 0.25 V 1.0 V TIS93 PNP General Purpose Amplifier