SEMICONDUCTOR KTC3730F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E ・Low Noise Figure, High Gain. B D G 2 3 K A ・Small rbb’Cc (Typ. 4pS). MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 11 V Emitter-Base Voltage VEBO 3 V Collector Current IC 50 mA Collector Power Dissipation PC 50 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ MILLIMETERS _ 0.05 0.6 + _ 0.05 0.8 + 0.38+0.02/-0.04 _ 0.05 0.2 + _ 0.05 1.0 + _ 0.05 0.35+ _ 0.05 0.1 + _ 0.05 0.15 + J C CHARACTERISTIC 1 DIM A B C D E G J K Storage Temperature Range 1. EMITTER 2. BASE 3. COLLECTOR TFSM Marking Type Name h FE Rank 3 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=10V, IE=0 - - 500 nA Emitter Cut-off Current IEBO VEB=2V, IC=0 - - 0.5 μA VCE(sat) IC=10mA, IB=5mA - - 0.5 V hFE (Note) VCE=10V, IC=5mA 56 - 180 VCB=10V, IE=0, f=1MHz - 0.8 1.5 pF Collector-Emitter Saturation Voltage DC Current Gain Collector Output Capacitance Cob Collector-Base Time Constant rbb’Cc VCE=10V, IE=10mA, f=31.8MHz - 4 12 pS Transition Frequency fT VCE=10V, IC=10mA, f=500MHz 1.4 3.2 - GHz Noise Figure NF - 3.5 - dB Note) hFE Classification : F:56~120, 2005. 4. 7 VCE=6V, IC=2mA, f=500MHz, Rg=50Ω G:82~180 Revision No : 0 1/3 KTC3730F Pc - Ta 300 200 100 0 0 50 100 150 OUTPUT CAPACITANCE Cob (pF) REVERSE TRANSFER CAPACITANCE C re (pF) COLLECTOR POWER DISSIPATION P C (mW) TYPICAL CHARACTERISTICS (Ta=25 C) C ob , C re - VCB 5 f=1MHz Ta=25Ƅ 3 1 C ob 0.5 C re 0.3 0.1 0.1 0.3 0.5 h FE - I C S 2le 10 30 50 2 - IC INSERTION GAIN S 2le 2 (dB) VCE =10V 300 100 50 30 10 0.1 10 5 VCE =10V f=500MHz 0 0.3 0.5 1 3 5 10 0.5 30 50 COLLECTOR CURRENT I C (mA) 1 3 5 10 30 50 COLLECTOR CURRENT I C (mA) VCE(sat) - I C S 2le 500 2 - f (dB) 30 VCE =10V I C =10mA 25 2 300 INSERTION GAIN S 2le COLLECTOR SATURATION VOLTAGE VCE(sat) (mW) 5 15 500 100 50 I C /I B =10 30 I C /I B =2 10 0.1 20 15 10 5 0 0.3 0.5 1 3 5 10 COLLECTOR CURRENT I C (mA) 2005. 4. 7 3 COLLECTOR-BASE VOLTAGE VCB (V) AMBIENT TEMPERATURE Ta ( C) DC CURRENT GAIN h FE 1 Revision No : 0 30 50 0.1 0.3 0.5 1 3 FREQUENCY f (GHz) 2/3 KTC3730F rbb. Cc - I C 5 COLLECTOR BASE TIME CONSTANT Cc. rbb (ps) TRANSITION FREQUENCY f T (GHz) f T - IE 3 1 0.5 0.3 VCE =10V 0.1 -0.1 -0.3-0.5 -1 -3 -5 -10 50 VCE =10V f=31.8MHz 30 10 5 3 1 -30 -50 0.1 0.3 0.5 3 5 10 30 50 COLLECTOR CURRENT I C (mA) EMITTERCURRENT I E (mA) NF - I C S 2le 20 2 - VCE 25 IC =10mA f=500MHz 2 (dB) VCE =6V f=500MHz INSERTION GAIN S 2le NOISE FIGURE NF (dB) 1 10 20 15 10 5 0 0 0.1 0.3 0.5 1 3 5 10 30 50 COLLECTOR CURRENT I C (mA) 0 2 4 6 8 10 COLLECTOR EMITTER VOLTAGE VCE (V) NF - VCE NOISE FIGURE NF (dB) 25 IC =10mA f=500MHz 20 15 10 5 0 0 2 4 6 8 10 COLLECTOR EMITTER VOLTAGE VCE (V) 2005. 4. 7 Revision No : 0 3/3