TGA4030-SM 17 – 37 GHz MPA/Multiplier Key Features • • • • • • RF Output Frequency Range: 17 - 37 GHz 20 dB Nominal Gain 22 dBm Nominal Output Maximum Power 2x and 3x Multiplier Function Bias: Vd = 5V, Id = 140mA Package Dimensions: 3.0 x 3.0 x 1.1 mm Primary Applications • • • • Measured Performance 25 15 20 10 S21 (dB) 15 5 S21 S11 S22 10 0 5 -5 0 -10 -5 -15 -10 -20 -15 -25 17 21 25 29 33 37 Frequency (GHz) Bias at Vd = 5V, Id = 140mA and Vg = -0.75V (Typical) Product Description The TriQuint TGA4030-SM is a Medium Power Amplifier and Multiplier for wide band 17 – 37 GHz applications. The part is designed using TriQuint’s 0.15um power pHEMT process. The TGA4030-SM provides a nominal 20 dB small signal gain with 22 dBm maximum output power. For 2x and 3x Multiplier Function, TGA4030-SM provides 15 dBm typical output power @ 9 dBm Pin. This part is ideally suited for applications such as Radio, EW, instrumentation and frequency multipliers. Psat Point-to-Point 24 22 Psat (dBm) S11 & S22 (dB) Bias at Vd = 5V, Id = 140mA and Vg = -0.75V (Typical) Point-to-Point Radio EW Instrumentation Frequency Multiplier 20 Evaluation boards are available upon request. 18 Lead-free and RoHS compliant 16 14 12 10 17 19 21 23 25 27 29 31 33 35 37 39 Frequency (GHz) Datasheet subject to change without notice. 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] April 2012 © Rev A TGA4030-SM Table I Absolute Maximum Ratings 1/ Symbol 1/ Parameter Value Vd-Vg Drain to Gate Voltage range 8V Vd Drain Supply Voltage Range 6V Vg Gate Supply Voltage Range -3 – 0 V Id Drain Current 400 mA |Ig| Gate Current 1.38 mA Pin Input Continuous Wave Power 20 dBm Notes These ratings represent the maximum operable values for this device. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. Table II Recommended Operating Conditions Symbol Parameter Value Vd Drain Voltage 5V Id Drain Current 140 mA Vg Gate Voltage (Typical) -0.75 V Vd1 Drain Voltage 1V Vg1 Gate Voltage -1.1 V See bias plan on page 14 for amplifier and 2x multiplier, page 15 for 3x multiplier 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] April 2012 © Rev A TGA4030-SM Table III RF Characterization Table Bias: Vd=5V, Id= 140mA, Vg = -0.75V (typical), TA= 25 C PARAMETER AMPLIFIER 2X MULTIPLIER 3x MULTIPLIER UNITS RF Output Frequencies 17 - 37 22 - 38 23 - 31 GHz S21, Small Signal Gain 20 - - dB S11, Input Return Loss 10 - - dB S22, Output Return Loss 5 5 5 dB Psat, Maximum Output Power 22 dBm P1dB, Output Power @ 1 dB Gain Compression 18 dBm IMD3@ 11 dBm Pout/Tone 30 dBc Output Power @ Pin = 9 dBm - 15 15 dBm Conversion Gain - 9 5 dB Gain Temperature coefficient -0.04 dB/oC 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] April 2012 © Rev A TGA4030-SM Table IV Power Dissipation and Thermal Properties Parameter Test Conditions Value Maximum Power Dissipation Tbaseplate = 70 ºC Pd = 1.2 W Tchannel = 150 ºC Tm = 1.0E+6 Hrs Thermal Resistance, θjc Vd = 5V Id = 140mA Pd = 0.7W θjc = 66.7 (ºC/W) Tchannel = 116 ºC Tm = 2.4E+7 Hrs 30 seconds 260 ºC Max Mounting Temperature Storage Temperature 1/ Notes 1/ 2/ -65 to 150 ºC For a median life, Tm, of 1E+6 hours, power dissipation is limited to Pd(max) = (Tchannel ºC – Tbase ºC)/θjc. Channel operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. 1.4 Power Dissipated (W) 2/ 1.2 1 0.8 Series1 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 Baseplate Temp (C) 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] April 2012 © Rev A TGA4030-SM Measured Data 15 20 10 15 5 10 0 5 -5 0 -10 -5 -15 -10 -20 -15 -25 S21 (dB) 25 10 15 20 25 30 35 40 S11 & S22 (dB) Bias Conditions: Vd = 5V, Idq = 140 mA, Vg = -0.75 V (Typical) 45 Frequency (GHz) This is device s-parameter 28 S21 (dB) 24 20 16 12 25 C 8 -40 C 4 70 C 0 10 15 20 25 30 35 40 45 Frequency (GHz) This is evaluation board s-parameter 5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] April 2012 © Rev A TGA4030-SM Measured Data Bias Conditions: Vd = 5V, Idq = 140 mA, Vg = -0.75 V (Typical) P1 24 P1dB (dBm) 22 20 18 16 14 12 10 17 19 21 23 25 27 29 31 33 35 37 Frequency (GHz) P 24 Psat (dBm) 22 20 18 16 14 12 10 17 19 21 23 25 27 29 31 33 35 37 39 Frequency (GHz) 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] April 2012 © Rev A TGA4030-SM Measured Data Bias Conditions: Vd = 5V, Idq = 140 mA, Vg = -0.75 V (Typical) 0.35 17GHz 21GHz 25GHz 29GHz 33GHz 37GHz Id (A) 0.3 0.25 0.2 0.15 0.1 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 Noise Figure (dB) Pin (dBm) 18 16 14 12 10 Serie 8 6 4 2 0 17 19 21 23 25 27 29 31 33 35 37 39 41 Frequency (GHz) 7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] April 2012 © Rev A TGA4030-SM Measured Data Bias Conditions: Vd = 5V, Idq = 140 mA, Vg = -0.75 V (Typical) 60 IMD3 (dBc) 50 40 30 17 GHz 19 GHz 21 GHz 23 GHz 25 GHz 20 10 0 -6 -3 0 3 6 9 12 15 18 15 18 21 IMD3 (dBc) Pout/tone (dBm) 50 45 40 35 30 25 20 15 10 5 0 27 GHz 29 GHz 31 GHz 33 GHz 35 GHz 37 GHz 39 GHz -3 0 3 6 9 12 Pout/tone (dBm) 8 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] April 2012 © Rev A TGA4030-SM Measured Data Bias Conditions: Vd = 5V, Idq = 140 mA, Vg = -0.75 V (Typical) 30 28 26 TOI (dBm) 24 22 20 Serie 18 16 14 12 10 17 19 21 23 25 27 29 31 33 35 37 Frequency (GHz) 9 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] April 2012 © Rev A TGA4030-SM Measured 2X Multiplier Data Pout (dBm) Bias Conditions: Vd = 5 V, Idq = 120 mA, Vg1 = -1.1 V, Pin = 9 dBm Pin @ 9 22 20 18 16 14 12 10 8 6 4 2 0 16 18 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) Conversion Gain (dB) Pin 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 16 18 20 22 24 26 28 30 32 34 36 38 40 42 Frequency (GHz) 10 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] April 2012 © Rev A TGA4030-SM Measured 3X Multiplier Data Bias Conditions: Vd = 5 V, Vd1 = 1 V, Idq = 160 mA, Pin = 9 dBm Pin @ 9 dB 20 18 Pout (dBm) 16 14 12 10 8 6 4 2 0 18 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) Pin @ 9 d Conversion Gain (dB) 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 18 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) 11 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] April 2012 © Rev A TGA4030-SM Mechanical Drawing Pin 16 Pin 15 Pin 14 Pin 13 Pin 12 Pin 1 Pin 11 Pin 2 GND Pin 10 Pin 3 Pin 9 Pin 4 Pin 5 Pin 6 Pin 7 Pin 8 Pin Description Pin Description 1, 2, 4, 9, 11,12 GND 7 Vg 3 RF IN 10 RF OUT 5 Vg1 14 Vd 6, 8, 13, 15 N/C 16 Vd1 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 12 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] April 2012 © Rev A Mechanical Drawing Units: Millimeters TGA4030-SM 13 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] April 2012 © Rev A TGA4030-SM Evaluation Board 0402 0.01 uF capacitors Board material is 8 mil ROGERS RO4003 14 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] April 2012 © Rev A TGA4030-SM Recommended Power Supply Connection Diagram Amplifier & 2X Multiplier Vd Bias Procedure Powering up: Set Vg (starting from 0V) to –1.5V Increase Vd (starting from 0V) to desired voltage 5V Make Vg more positive, ending up at approx –0.75V. Id ~140mA. Apply RF (max input level +20dBm). Powering down: Remove RF Reduce Vd to 0V Set Vg to -1.5V. Amplifier Vg Vd Set Vd = 5.0V Vary (Vg + Vg1) to achieve Id = 140mA 2x Multiplier Set Vd = 5.0V Set Vg1 = -1.1V Vary Vg to achieve Id = 120mA Vg1 Vg 15 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] April 2012 © Rev A TGA4030-SM Recommended Power Supply Connection Diagram 3X Multiplier Vd1 Vd Vg 3x Multiplier Set Vd = 5.0V Set Vd1 = 1.0V Vary (Vg + Vg1) to achieve(Id + Id1) = 160mA 16 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] April 2012 © Rev A TGA4030-SM Recommended Surface Mount Package Assembly Proper ESD precautions must be followed while handling packages. Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry. TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven vendors’ recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed in the table below. Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement. The volume of solder paste depends on PCB and component layout and should be well controlled to ensure consistent mechanical and electrical performance. Clean the assembly with alcohol. Typical Solder Reflow Profiles Reflow Profile SnPb Pb Free Ramp-up Rate 3 C/sec 3 C/sec Activation Time and Temperature 60 – 120 sec @ 140 – 160 C 60 – 180 sec @ 150 – 200 C Time above Melting Point 60 – 150 sec 60 – 150 sec Max Peak Temperature 240 C 260 C Time within 5 C of Peak Temperature 10 – 20 sec 10 – 20 sec Ramp-down Rate 4 – 6 C/sec 4 – 6 C/sec Ordering Information Part Package Style TGA4030-SM 3X3 QFN 17 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] April 2012 © Rev A