SSM6L14FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L14FE ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.6±0.05 Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS ±10 V DC ID 0.8 Pulse IDP 1.6 Drain current A Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics 5 3 4 1.Source1 4.Source2 2.Gate1 5.Gate2 3.Drain2 6.Drain1 ES6 JEDEC ― V JEITA ― V TOSHIBA Symbol Rating Unit Drain-source voltage VDSS −20 Gate-source voltage VGSS ±8 DC ID −0.72 Pulse IDP −1.44 Drain current 2 0.12±0.05 Characteristics 6 0.55±0.05 Q1 Absolute Maximum Ratings (Ta = 25°C) 1 0.2±0.05 1.2±0.05 1.6±0.05 • • N-ch: 1.5-V drive P-ch: 1.5-V drive N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch:RDS(ON) = 330 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 240 mΩ (max) (@VGS = 4.5 V) Q2 P-ch:RDS(ON) = 440 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 300 mΩ (max) (@VGS = -4.5 V) 1.0±0.05 0.5 0.5 • Unit: mm A 2-2N1D Weight: 3.0 mg (typ.) Absolute Maximum Ratings (Ta = 25 °C) (Q1, Q2 Common) Characteristics Power dissipation Symbol Rating Unit PD(Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Mounted on an FR4 board. (total dissipation) (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6 ) Marking 6 5 Equivalent Circuit (top view) 4 6 LL5 1 2 5 Q1 3 1 4 Q2 2 3 1 2010-03-25 SSM6L14FE Q1 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 V 20 ⎯ ⎯ V (BR) DSX ID = 1 mA, VGS = - 10 V 12 ⎯ ⎯ Drain cutoff current IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ±8 V, VDS = 0 V ⎯ ⎯ ±1 μA 0.35 ⎯ 1.0 V S Drain-source breakdown voltage Gate threshold voltage Vth VDS = 3 V, ID = 1 mA Forward transfer admittance |Yfs| VDS = 3 V, ID = 500 mA (Note 2) 1.05 2.1 ⎯ ID = 500 mA, VGS = 4.5 V (Note 2) ⎯ 185 240 ID = 400 mA, VGS = 2.5 V (Note 2) ⎯ 245 330 ID = 250 mA, VGS = 1.8 V (Note 2) ⎯ 310 450 ID = 150 mA, VGS = 1.5 V (Note 2) ⎯ 370 600 ⎯ 90 ⎯ ⎯ 21 ⎯ ⎯ 15 ⎯ ⎯ 2.00 ⎯ ⎯ 1.02 ⎯ ⎯ 0.98 ⎯ Drain-source ON-resistance RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Switching time VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, ID = 0.8 A VGS = 4.5 V Turn-on time ton VDD = 10 V, ID = 200 mA ⎯ 18 ⎯ Turn-off time toff VGS = 0 to 2.5 V, RG = 4.7 Ω ⎯ 50 ⎯ ID = -0.8 A, VGS = 0 V ⎯ -0.84 -1.2 Drain-source forward voltage VDSF (Note 2) V mΩ pF nC ns V Q2 Electrical Characteristics (Ta = 25°C) Characteristics Drain-source breakdown voltage Symbol Test Conditions Min Typ. Max V (BR) DSS ID = -1 mA, VGS = 0 V -20 ⎯ ⎯ V (BR) DSX ID = -1 mA, VGS = 8 V -12 ⎯ ⎯ Unit V Drain cutoff current IDSS VDS = -20 V, VGS = 0 V ⎯ ⎯ -10 μA Gate leakage current IGSS VGS = ±8 V, VDS = 0 V ⎯ ⎯ ±1 μA Gate threshold voltage Vth VDS = -3 V, ID = -1 mA -0.3 ⎯ -1.0 V Forward transfer admittance |Yfs| VDS = -3 V, ID = -400 mA (Note2) 850 ⎯ ⎯ mS ID = -400 mA, VGS = -4.5 V (Note2) ⎯ 0.25 0.30 ID = -200 mA, VGS = -2.5 V (Note2) ⎯ 0.34 0.44 ID = -100 mA, VGS = -1.8 V (Note2) ⎯ 0.44 0.67 ID = -50 mA, VGS = -1.5 V (Note2) ⎯ 0.55 1.04 ⎯ 110 ⎯ ⎯ 28 ⎯ ⎯ 20 ⎯ ⎯ 1.76 ⎯ ⎯ 1.22 ⎯ ⎯ 0.54 ⎯ Drain-source ON-resistance RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate−source charge Qgs Gate−drain charge Qgd Switching time VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = -10 V, IDS= -720 mA VGS = -4.5 V Turn-on time ton VDD = -10 V, ID = -100 mA ⎯ 11 ⎯ Turn-off time toff VGS = 0 to -2.5 V, RG = 50 Ω ⎯ 38 ⎯ ⎯ 0.85 1.2 Drain-source forward voltage VDSF ID = 720 mA, VGS = 0 V (Note2) Ω pF nC ns V Note 2: Pulse test 2 2010-03-25 SSM6L14FE Q1 Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V OUT 2.5 V 90% IN 10% 0V RG 0 10 μs VDD VDD (c) VOUT VDD = 10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 90% 10% VDS (ON) tf tr ton toff Q2 Switching Time Test Circuit (a) Test Circuit (b) VIN 0V 90% OUT 0 IN 10% −2.5 V RG −2.5V 10 μs RL VDD (c) VOUT VDD =− 10 V RG = 50 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C VDS (ON) 90% 10% VDD tr ton tf toff Q1 Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the Q1 of the SSM6L14FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Q2 Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (−1 mA for the Q2 of the SSM6L14FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration 3 2010-03-25 SSM6L14FE Q1 (N-ch MOSFET) ID – VDS ID – VGS 2000 10000 Common Source Ta = 25°C 2.5 V 1.8 V Pulse Test (mA) 4V (mA) 10 V ID 1000 Drain current Drain current ID 1.5 V VGS = 1.2 V 0 0 0.2 0.4 0.6 Drain–source voltage 0.8 VDS Common Source VDS = 3 V Pulse Test 1000 100 Ta = 100°C 10 25°C 1 0.1 0 1.0 1 (V) VGS (V) RDS (ON) – VGS 1000 Common Source ID = 0.15 A Pulse Test Drain–source ON-resistance RDS (ON) (mΩ) Drain–source ON-resistance RDS (ON) (mΩ) 2 Gate–source voltage RDS (ON) – VGS 1000 −25°C 500 25°C Ta = 100°C Common Source ID = 0.5 A Pulse Test 500 25°C Ta = 100°C −25°C 0 0 2 4 6 Gate–source voltage 8 VGS −25°C 0 0 10 2 (V) 4 RDS (ON) – ID Common Source Ta = 25°C 500 VGS = 1.5 V 1.8 V 2.5 V 4.5 V Common Source 1.8 V, 0.25 A 500 VGS = 1.5 V, ID = 0.15 A 4.5 V, 0.5 A 0 10 (V) Pulse Test Pulse Test 0 8 VGS RDS (ON) – Ta 1000 Drain–source ON-resistance RDS (ON) (mΩ) Drain–source ON-resistance RDS (ON) (mΩ) 1000 6 Gate–source voltage 1000 Drain current 0 −50 2000 ID (mA) 0 2.5 V, 0.4 A 50 Ambient temperature 4 100 Ta 150 (°C) 2010-03-25 SSM6L14FE Q1 (N-ch MOSFET) ⎪Yfs⎪ – ID Forward transfer admittance ⎪Yfs⎪ Common Source ID = 1 mA VDS = 3 V Vth (V) Gate threshold voltage (S) Vth – Ta 1.0 0.5 0 −50 0 50 100 Ambient temperature Ta 150 10 5 3 1 0.5 0.3 0.1 0.05 Common Source VDS = 3 V Ta = 25°C 0.03 Pulse Test 0.01 1 10 (°C) 25°C Ta = 100°C −25°C 10 (pF) S 100 C 500 50 Capacitance (mA) IDR Drain reverse current 100 10 −0.5 −1 Drain–source voltage Crss Common Source VGS = 0 V 5 VDS (V) 10 5 10 50 VDS 100 (V) (V) Common Source ID = 0.8 A Ta = 25°C VGS Gate–source voltage 100 50 ton 1 1 1 8 500 t f 5 0.5 Drain–source voltage Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25°C 1000 toff 10 Ta = 25°C 0.1 Dynamic Input Characteristic 5000 (ns) Coss 1 −1.5 t – ID 10000 t Ciss f = 1 MHz 1 0 Switching time 10000 (mA) Capacitance – VDS D IDR G ID 1000 Common Source VGS = 0 V Pulse Test 1000 1000 Drain current IDR – VDS 10000 100 tr 10 100 Drain current 1000 ID 6 VDD = 10 V 2 0 10000 (mA) VDD = 16 V 4 0 1 2 Total Gate Charge 5 3 Qg 4 (nC) 2010-03-25 SSM6L14FE Q2 (P-ch MOSFET) ID – VDS ID – VGS -2.5 V -8 V -4.5 V Drain current ID (A) -1.4 -1.2 -10 Common Source Ta = 25 °C Pulse Test Common Source VDS = -3 V Drain current ID (A) -1.6 -1.8 V -1 -1.5 V -0.8 -0.6 -0.4 VGS=-1.2 V Pulse Test -1 -0.1 Ta = 100 °C 25 °C -0.01 − 25 °C -0.001 -0.2 0 0 -0.2 -0.4 -0.8 -0.6 Drain-source voltage -0.0001 0 -1.0 -1.0 VDS (V) Gate-source voltage RDS (ON) – VGS 1.4 Common Source Common Source Ta = 25°C 1.2 Pulse Test Pulse Test Drain-source ON-resistance RDS (ON) (Ω) Drain-source ON-resistance RDS (ON) (Ω) RDS (ON) – ID 1.4 ID = -100 mA 1.2 -2.0 VGS (V) 1.0 0.8 0.6 25 °C 0.4 Ta = 100 °C 0.2 1.0 0.8 -1.5 V 0.6 -1.8 V 0.4 -2.5 V 0.2 VGS = -4.5 V − 25 °C 0 0 0 -2 -4 -6 Gate-source voltage -8 -500 0 VGS (V) -1.0 Common Source Pulse Test Common Source Vth (V) -100 mA / -1.8 V -200 mA / -2.5 V Gate threshold voltage Drain-source ON-resistance RDS (ON) (Ω) VDS = -3 V -50 mA / -1.5 V 0.8 0.6 0.4 ID = -400 mA / VGS = -4.5 V 0.2 0 −50 0 -1500 Vth – Ta RDS (ON) – Ta 1 -1000 Drain current ID (mA) 50 100 ID = -1 mA -0.5 0 −50 150 Ambient temperature Ta (°C) 0 50 100 150 Ambient temperature Ta (°C) 6 2010-03-25 SSM6L14FE Q2 (P-ch MOSFET) |Yfs| – ID IDR – VDS 10000 10000 (mA) Pulse Test Drain reverse current IDR Forward transfer admittance ⏐Yfs⏐ (mS) Common Source VDS = -3 V Ta = 25°C 1000 100 10 -1 -10 -100 -1000 Common Source VGS = 0 V Pulse Test D 1000 100 S Ta =100 °C 10 25 °C 1 −25 °C 0.1 0 -10000 0.4 0.2 Drain current ID (mA) 0.6 Drain-source voltage Capacitance – VDS 1000 IDR G Switching time t (ns) (pF) Capacitance C 50 Common Source 30 Ta = 25°C f = 1 MHz VGS = 0 V VDS (V) VDD = -10 V VGS = 0 to -2.5 V Ta = 25 °C RG = 50Ω toff 1000 Ciss 1.2 Common Source 500 100 1.0 t – ID 10000 300 0.8 tf 100 ton 10 tr Coss Crss 1 10 -0.1 -1 -10 Drain-Source voltage -100 -1 VDS (V) -10 -100 -1000 -10000 Drain current ID (mA) Dynamic Input Characteristic -8 Common Source Ta = 25°C -6 Gate-source voltage VGS (V) ID = -0.72 A -4 VDD = - 10 V VDD = - 16 V -2 0 0 1 Total Gate Charge 2 Qg 3 (nC) 7 2010-03-25 SSM6L14FE Q1, Q2 Common PD* – Ta Power dissipation PD* (mW) 250 Mounted on FR4 board. (25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.135 mm2 × 6) 200 150 100 150 0 -40 *:Total Rating -20 0 20 40 60 80 Ambient temperature 100 120 Ta 140 160 (°C) 8 2010-03-25 SSM6L14FE RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. 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