TOSHIBA SSM6J412TU

SSM6J412TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM6J412TU
○ Power Management Switch Applications
2.1±0.1
1.5-V drive
Low ON-resistance: RDS(ON) = 99.6 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 67.8 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 51.4 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 42.7 mΩ (max) (@VGS = -4.5 V)
Symbol
Rating
Unit
Drain-source voltage
VDSS
-20
V
Gate-source voltage
VGSS
±8
V
DC
Drain current
Pulse
ID
-4.0
IDP (Note 1)
5
3
4
+0.1
0.3-0.05
2
A
-16.0
PD (Note 2)
Power dissipation
6
+0.06
0.16-0.05
Characteristic
1
0.7±0.05
Absolute Maximum Ratings (Ta = 25°C)
0.65 0.65
1.3±0.1
1.7±0.1
2.0±0.1
•
•
Unit: mm
1
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
UF6
1,2,5,6: Drain
3:
Gate
4:
Source
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2T1D
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight : 7.0mg ( typ. )
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Pw ≤ 10μs, Duty. ≤ 1%
Note 2: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm , Cu Pad: 645 mm2)
Marking (Top View)
6
5
Equivalent Circuit
4
6
5
4
3
1
2
3
KPH
1
2
1
2010-12-08
SSM6J412TU
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-source breakdown voltage
Symbol
Test Conditions
Min
Typ.
Max
Unit
-20
⎯
⎯
V
-15
⎯
⎯
V
⎯
⎯
-1
μA
V (BR) DSS ID = -1 mA, VGS = 0 V
V (BR) DSX ID = -1 mA, VGS = 5 V
(Note 4)
Drain cut-off current
IDSS
Gate leakage current
IGSS
VGS = ±8 V, VDS = 0 V
⎯
⎯
±1
μA
Vth
VDS = -3 V, ID = -1 mA
-0.3
⎯
-1.0
V
S
Gate threshold voltage
⏐Yfs⏐
Forward transfer admittance
Drain–source ON-resistance
RDS (ON)
Input capacitance
Ciss
Output capacitance
Coss
VDS = -3 V, ID = -1.0 A
(Note 3)
4.5
9.1
⎯
ID = -3.0 A, VGS = -4.5 V
(Note 3)
⎯
36.9
42.7
ID = -2.5 A, VGS = -2.5 V
(Note 3)
⎯
42.8
51.4
ID = -1.5 A, VGS = -1.8 V
(Note 3)
⎯
50.6
67.8
ID = -0.5 A, VGS = -1.5 V
(Note 3)
⎯
58.6
99.6
VDS = -10 V, VGS = 0 V
f = 1 MHz
⎯
840
⎯
⎯
118
⎯
⎯
99
⎯
Turn-on time
ton
VDD = -10 V, ID = -2.0 A
⎯
32
⎯
Turn-off time
toff
VGS = 0 to -2.5 V, RG = 4.7 Ω
⎯
107
⎯
⎯
12.8
⎯
⎯
1.4
⎯
Reverse transfer capacitance
Switching time
VDS = -20 V, VGS = 0 V
Crss
Total gate charge
Qg
Gate-source charge
Qgs1
Gate-drain charge
Qgd
Drain-source forward voltage
VDSF
VDD = -10 V, ID = -4.0 A,
VGS = -4.5 V
ID = 4.0 A, VGS = 0 V
(Note 3)
⎯
3.0
⎯
⎯
0.88
1.2
mΩ
pF
ns
nC
V
Note 3: Pulse test
Note 4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the
drain-source breakdown voltage is lowered in this mode.
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
0V
90%
OUT
0
IN
10%
−2.5 V
RG
−2.5V
10 μs
RL
(c) VOUT
VDS (ON)
90%
VDD
VDD = -10 V
RG = 4.7 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
10%
VDD
tr
ton
tf
toff
Notice on Usage
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration
2
2010-12-08
SSM6J412TU
ID – VDS
-10
VGS =-4.5 V
ID – VGS
-100
-2.5 V
Common Source
-1.8 V
-1
ID
Drain current
Drain current
-4
-2
Common Source
Ta = 25 °C
Pulse test
0
-0.2
-0.6
-0.4
-0.8
Drain–source voltage
VDS
Pulse test
(A)
(A)
ID
-1.5 V
-6
0
VDS = -3 V
-10
-8
-0.1
Ta = 100 °C
25 °C
-0.001
-0.0001
0
-1
-0.5
(V)
Drain–source ON-resistance
RDS (ON) (mΩ)
Drain–source ON-resistance
RDS (ON) (mΩ)
Ta = 100 °C
25 °C
40
20
− 25 °C
0
-4
-2
Gate–source voltage
-6
VGS
100
80
60
20
− 25 °C
0
(V)
-2
Pulse test
Drain–source ON-resistance
RDS (ON) (mΩ)
Drain–source ON-resistance
RDS (ON) (mΩ)
120
VGS = -1.5 V
80
-1.8 V
60
-2.5 V
40
-4.5 V
20
0
0
-2.0
-4.0
-6.0
Drain current
ID
-6
VGS
-8
(V)
RDS (ON) – Ta
Common Source
Ta = 25°C
100
-4
Gate–source voltage
140
120
25 °C
40
0
-8
Ta = 100 °C
RDS (ON) – ID
140
(V)
ID =-2.5A
Common Source
Pulse test
120
80
0
VGS
-2.0
RDS (ON) – VGS
100
60
-1.5
140
ID =-0.5A
Common Source
Pulse test
120
-1.0
Gate–source voltage
RDS (ON) – VGS
140
−25 °C
-0.01
-8.0
100
80
-1.5 A / -1.8 V
ID = -0.5 A / VGS = -1.5 V
-2.5 A / -2.5 V
60
40
-3.0 A / -4.5 V
20
0
−50
-10.0
Common Source
Pulse test
0
50
Ambient temperature
(A)
3
100
Ta
150
(°C)
2010-12-08
SSM6J412TU
Vth – Ta
-0.6
-0.4
-0.2
0
50
100
Ambient temperature
VDS = -3 V
Ta = 25 °C
Ta
150
0.1
-0.01
-0.1
-1
-10
ID
-100
(A)
Dynamic Input Characteristic
(V)
Ciss
Coss
300
100
50
Common Source
30
Ta = 25 °C
f = 1 MHz
VGS = 0 V
Crss
-1
-10
Drain–source voltage
-100
VDS
VDD = -16 V
-4
-2
Common Source
ID = -4.0 A
Ta = 25 °C
10
(A)
10
IDR
t
100
ton
10
tr
-0.1
Drain current
Qg
30
(nC)
Common Source
VGS = 0 V
Ta = 25 °C
D
Pulse test
IDR
G
S
1
0.1
25 °C
0.01
100 °C
-0.01
20
IDR – VDS
100
Drain reverse current
tf
0
Total Gate Charge
Common Source
VDD = -10 V
VGS = 0 to -2.5 V
Ta = 25 °C
RG = 4.7Ω
toff
VDD = -10 V
(V)
t – ID
10000
1
-0.001
-6
0
10
-0.1
1000
0.3
-8
VGS
Capacitance
500
1.0
Drain current
Gate–source voltage
(pF)
C
1000
3.0
(°C)
5000
3000
10
C – VDS
10000
(ns)
30
Common Source
Pluse test
0
−50
Switching time
(S)
-0.8
100
Forward transfer admittance
Vth (V)
Gate threshold voltage
Common Source
VDS = -3 V
ID = -1 mA
⎪Yfs⎪
|Yfs| – ID
-1.0
-1
ID
0.001
0
-10
0.2
−25 °C
0.4
0.6
Drain–source voltage
(A)
4
0.8
VDS
1.0
1.2
(V)
2010-12-08
SSM6J412TU
PD – Ta
1.25
600
Mounted on FR4 board
(25.4mm × 25.4mm
× 1.6mm ,
Cu Pad : 645 mm2)
DC
Power dissipation PD (W)
Transient thermal impedance Rth (°C/W)
Rth – tw
100
10
1.0
0.75
0.5
0.25
Single pulse
Mounted on FR4 board
1
0.001
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )
0.01
0.1
1
Pulse Width
10
100
0
-40
1000
tw (s)
-20
0
20
40
60
80
Ambient temperature
5
100
120 140
Ta
(°C)
160
2010-12-08
SSM6J412TU
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
6
2010-12-08