TOSHIBA SSM6L11TU

SSM6L11TU
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
SSM6L11TU
High Speed Switching Applications
•
Optimum for high-density mounting in small packages
•
Low ON-resistance
Q1: RDS(ON) = 395mΩ (max) (@VGS = 1.8 V)
Q2: RDS(ON) = 430mΩ (max) (@VGS = -2.5 V)
Unit: mm
2.1±0.1
Q1 Absolute Maximum Ratings (Ta = 25°C)
VDS
20
V
Gate-source voltage
VGSS
± 12
V
DC
ID
0.5
Pulse
IDP
1.5
Drain current
A
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
-20
V
Gate-source voltage
VGSS
± 12
V
DC
ID
-0.5
Pulse
IDP
-1.5
Drain current
Symbol
Rating
Unit
PD
(Note 1)
500
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note:
5
3
4
4.Source2
5.Gate2
6.Drain1
UF6
(Ta = 25°C)
Drain power dissipation
2
1.Source1
2.Gate1
3.Drain2
A
Absolute Maximum Ratings (Q1,Q2 Common)
Characteristics
6
0.7±0.05
Q2 Absolute Maximum Ratings (Ta = 25°C)
1
+0.1
0.3-0.05
Drain-source voltage
+0.06
0.16-0.05
Unit
0.65 0.65
Rating
1.3±0.1
Symbol
2.0±0.1
Characteristics
1.7±0.1
JEDEC
―
JEITA
―
TOSHIBA
2-2T1B
Weight: 7.0 mg (typ.)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board. (total dissipation)
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
Marking
6
Equivalent Circuit (top view)
5
4
6
2
4
Q1
K8
1
5
Q2
3
1
2
1
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2009-10-07
SSM6L11TU
Q1 Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Typ.
Max
Unit
μA
VGS = ±12V, VDS = 0
⎯
⎯
±1
ID = 1 mA, VGS = 0
20
⎯
⎯
V (BR) DSX
ID = 1 mA, VGS = −12 V
10
⎯
⎯
VDS = 20 V, VGS = 0
⎯
⎯
1
μA
Vth
VDS = 3 V, ID = 0.1 mA
0.5
⎯
1.1
V
⏐Yfs⏐
VDS = 3 V, ID = 0.25 A
(Note2)
1.2
2.4
⎯
S
ID = 0.25 A, VGS = 4.0 V
(Note2)
⎯
125
145
ID = 0.25 A, VGS = 2.5 V
(Note2)
⎯
150
190
ID = 0.25 A, VGS = 1.8 V
(Note2)
⎯
200
395
IGSS
Drain cut-off current
IDSS
Gate threshold voltage
Forward transfer admittance
Drain-source on-resistance
Min
V (BR) DSS
Gate leakage current
Drain-source breakdown voltage
Test Condition
RDS (ON)
V
mΩ
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
268
⎯
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
34
⎯
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
44
⎯
pF
Switching time
Note2:
Turn-on time
ton
VDD = 10 V, ID = 0.25 A,
⎯
11
⎯
Turn-off time
toff
VGS = 0 to 2.5 V, RG = 4.7 Ω
⎯
15
⎯
ns
Pulse test
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
2.5 V
OUT
2.5 V
90%
IN
0V
RG
0
10 μs
VDD
(c) VOUT
VDD = 10 V
RG = 4.7 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
10%
VDD
VDS (ON)
90%
10%
tr
ton
tf
toff
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID=100 μA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on))
Please take this into consideration when using the device.
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SSM6L11TU
Q2 Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Min
Typ.
Max
Unit
μA
VGS = ± 12V, VDS = 0
⎯
⎯
±1
V (BR) DSS
ID = -1 mA, VGS = 0
-20
⎯
⎯
V (BR) DSX
ID = -1 mA, VGS = +12 V
-8
⎯
⎯
VDS = -20 V, VGS = 0
⎯
⎯
-1
μA
-0.5
⎯
-1.1
V
S
Gate leakage current
IGSS
Drain-source breakdown voltage
Test Condition
Drain cut-off current
IDSS
Vth
VDS = -3 V, ID = -0.1 mA
Forward transfer admittance
⏐Yfs⏐
VDS = -3 V, ID = -0.25 A
(Note3)
0.65
1.3
⎯
Drain-source on-resistance
RDS (ON)
ID = -0.25 A, VGS = -4 V
(Note3)
⎯
210
260
ID = -0.25 A, VGS = -2.5 V
(Note3)
⎯
310
430
Gate threshold voltage
V
mΩ
Input capacitance
Ciss
VDS = -10 V, VGS = 0, f = 1 MHz
⎯
218
⎯
pF
Reverse transfer capacitance
Crss
VDS = -10 V, VGS = 0, f = 1 MHz
⎯
42
⎯
pF
Output capacitance
Coss
VDS = -10 V, VGS = 0, f = 1 MHz
⎯
52
⎯
pF
Switching time
Note3:
Turn-on time
ton
VDD = -10 V, ID = -0.25 A,
⎯
16
⎯
Turn-off time
toff
VGS = 0 to -2.5 V, RG = 4.7 Ω
⎯
15
⎯
ns
Pulse test
Switching Time Test Circuit
(a) Test circuit
0
OUT
(b) VIN
0V
90%
IN
RG
−2.5V
10 μs
VDD
10%
−2.5 V
RL
(c) VOUT
VDD = -10 V
RG = 4.7 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
VDS (ON)
90%
10%
VDD
tr
ton
tf
toff
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID=-100 μA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on))
Please take this into consideration when using the device.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Thermal resistance Rth (j-a) and drain power dissipation PD vary depending on board material, board area, board
thickness and pad area. When using this device, please take heat dissipation into consideration.
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2009-10-07
SSM6L11TU
Q1(Nch MOS FET)
ID - VGS
ID - VDS
Drain current ID (mA)
1.8
1.8
5.0
1400
1200
10000
1.6
1.6
2.0
2.0
3.0
3.0
4.0
4.0
5.0
1000
800
1000
Drain current ID (mA)
1600
VGS=1.4V
VGS=1.4V
600
400
100
Ta=100°C
10
1
Common
Common Source
Source
200
25°C
-25°C
0.1
Common Source
VDS=3V
Ta=25°Cソース接地
Ta=25℃
Ta=25℃
0
0
0.2
0.4
0.6
0.8
0.01
1
0
1
2
Gate-Source voltage VGS (V)
Drain-Source voltage VDS (V)
Drain-Source on resistance
RDS(ON) (mΩ)
160
2.5V
140
120
VGS=4V
100
80
60
40
0
400
350
200
200
150
250
200
25°C
150
Ta=100°C
100
-25°C
0
400 600 800 1000 1200 1400 1600
Drain current ID (mA)
0
RDS(ON) - Ta
1
2
3
4
5
6
7
8
9
Gate-Source voltage VGS (V)
1.8V
2.5V
VGS=4V
100
10
Vth - Ta
1
Common Source
ID=250mA
300
250
300
50
Common Source
Ta=25°C
20
0
Common Source
ID=250mA
350
Gate threshold voltage Vth(V)
Drain-Source on resistance
RDS(ON) (mΩ)
400
1.8V
180
Drain-Source on resistance
RDS(ON) (mΩ)
RDS(ON) - VGS
RDS(ON) - ID
200
3
Common Source
ID=0.1mA
VDS=3V
0.8
0.6
0.4
0.2
50
0
-60 -40 -20 0
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
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2009-10-07
SSM6L11TU
Q1(Nch MOS FET)
|Yfs| - ID
IDR - VDS
1600
Drain reverse current IDR (mA)
Forward transfer admittance
|Yfs| (S)
10
25°C
-25°C
1
Ta=100°C
Common Source
VDS=3V
Ta=25°C
Common Source
VGS=0V
Ta=25°C
1400
1200
D
1000
G
IDR
800
S
600
400
200
0
0
10
100
1000
10000
0
-0.2
-0.4
-0.6
-0.8
Drain-Source voltage VDS (V)
Drain current ID (mA)
C - VDS
Ciss
100
Common Source
VGS=0V
f=1MHz
Ta=25°C
t - ID
1000
Switching time t (ns)
Capacitance C (pF)
1000
Coss
-1
toff
Common Source
VDD=10V
VGS=0~2.5V
Ta=25°C
100
tf
ton
10
tr
Crss
1
10
0.1
1
10
Drain-Source voltage VDS (V)
10
100
5
100
1000
Drain current ID (mA)
10000
2009-10-07
SSM6L11TU
Q2(Pch MOS FET)
ID - VDS
ID - VGS
-10000
-1600
-5.0
-5.0
-3.0
-3.0
- 1000
-1200
Drain current ID (mA)
Drain current ID (mA)
-1400
-2.0
-1000
-4.0
-4.0
-800
-1.8
-1.8
-600
-400
VGS=-1.6
VGS=-1.6
-200
Common
Source
Common
Source
ソース接地
Ta=25°C
Ta=25℃
0
-0.2
-0.4
-0.6
-0.8
- 10
Ta=100°C
-1
25°
-25°C
- 0.1
Ta=25℃
0
-100
Common Source
VDS=-3V
- 0.01
-1
0
-1
-2
Gate-Source voltage VGS (V)
Drain-Source voltage VDS (V)
-3
-
500
Common Source
ID=-250mA
400
Drain-Source on resistance
RDS(ON) (mΩ)
Drain-Source on resistance
RDS(ON) (mΩ)
RDS(ON) - VGS
RDS(ON) - ID
500
-2.5V
-2.5V
300
200
VGS=-4V
VGS=-4V
100
400
300
200
Ta=100°C
25°C
-25°C
100
Common
Source
Common
ソース接地
Ta=25℃
Ta=25°C
Ta=25℃
0
0
-200
-400
-600
-800
0
0
-1000 -1200 -1400 -1600
Drain current ID (mA)
RDS(ON) - Ta
500
-1
-2
-3 -4 -5 -6 -7 -8 -9 -10
Gate-Source voltage VGS (V)
Vth - Ta
-1
400
ID=-250mA
ID=-250mA
ID=-250mA
Gate threshold voltage Vth(V)
Drain-Source on resistance
RDS(ON) (mΩ)
CommonSource
Source
Common
ソース接地
-2.5V
-2.5V
300
VGS=-4V
200
VGS=-4V
100
-0.8
-0.6
-0.4
-0.2
Common Source
ID=-0.1mA
VDS=-3V
0
-60 -40 -20 0
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
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SSM6L11TU
Q2(Pch MOS FET)
|Yfs| - ID
IDR - VDS
1600
Drain reverse current IDR (mA)
Forward transfer admittance
|Yfs| (S)
10
25°C
-25°C
1
Ta=100°C
Common Source
VDS=-3V
Ta=25°C
0
-10
Common Source
VGS=0V
Ta=25°C
1400
1200
1000
800
600
400
200
0
-100
-1000
-10000
0.0
0.2
Drain current ID (mA)
C - VDS
Ciss
100
Common Source
VGS=0V
f=1MHz
Ta=25°C
Coss
Crss
-1
-10
Drain-Source voltage VDS (V)
toff
Common Source
VDD=-10V
VGS=0~-2.5V
Ta=25°C
100
tf
10
ton
tr
10
-0
1.0
t - ID
1000
Switching time t (ns)
Capacitance C (pF)
1000
0.4
0.6
0.8
Drain-Source voltage VDS (V)
1
-10
-100
7
-100
-1000
Drain current ID (mA)
-10000
2009-10-07
SSM6L11TU
PD* - Ta
Drain power dissipation PD* (mW)
1000
mounted FR4 board
(25.4mm*25.4mm*1.6t
Cu Pad :645mm2)
t=10s
800
600
DC
400
200
0
0
20
*:Total Rating
40
60
80 100 120 140
Ambient temperature Ta( ℃)
160
Transient thermal impedance
rth (°C/W )
rth – tw
1000
Single pulse
Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
100
10
1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(s)
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2009-10-07
SSM6L11TU
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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2009-10-07