StrongIRFET
IRFS7437-7PPbF
Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l PWM Inverterized topologies
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Electronic ballast applications
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
HEXFET® Power MOSFET
D
G
S
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
40V
1.1m
1.4m
295A
ID (Package Limited)
195A
c
D
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen Free
S
S
G
S
S
S
D2Pak 7 Pin
G
D
S
Gate
Drain
Source
Ordering Information
Base Part Number
Package Type
D2Pak-7PIN
4.0
Complete Part
Number
IRFS7437-7PPbF
IRFS7437TRL7PP
Quantity
50
800
300
ID = 100A
Limited By Package
250
ID, Drain Current (A)
RDS(on), Drain-to -Source On Resistance (m )
IRFS7437-7PPbF
Standard Pack
Form
Tube
Tape and Reel Left
3.0
TJ = 125°C
2.0
150
100
50
T J = 25°C
1.0
0
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
www.irf.com
200
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
1
September 6, 2012
IRFS7437-7PPbF
Absolute Maximum Ratings
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Symbol
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
Parameter
295
208
195
1040
A
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
231
1.5
± 20
3.5
-55 to + 175
c
c
d
VGS
f
dv/dt
TJ
TSTG
Single Pulse Avalanche Energy
EAS (Thermally limited)
EAS (tested)
IAR
EAR
W/°C
V
V/ns
°C
x
300
x
10lbf in (1.1N m)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
W
e
344
508
See Fig. 14, 15, 22a, 22b
Single Pulse Avalanche Energy Tested Value l
Avalanche Currentd
Repetitive Avalanche Energy d
mJ
A
mJ
Thermal Resistance
Symbol
Parameter
k
RJC
RJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
j
Typ.
Max.
Units
–––
–––
0.65
40
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Max. Units
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
Symbol
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
40
–––
–––
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
2.2
–––
–––
–––
–––
–––
–––
0.035
1.1
1.7
–––
–––
–––
–––
–––
2.2
–––
–––
1.4
–––
3.9
1.0
150
100
-100
–––
RG
Parameter
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.069mH
RG = 50, IAS = 100A, VGS =10V.
ISD 100A, di/dt 1288A/μs, VDD V(BR)DSS, TJ 175°C.
V
V/°C
m
m
V
μA
nA
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 100A
VGS = 6.0V, ID = 50A
VDS = VGS, ID = 150μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
g
g
d
Pulse width 400μs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R is measured at TJ approximately 90°C.
This value determined from sample failure population,
starting TJ = 25°C, L= 0.069mH, RG = 50, IAS = 100A, VGS =10V.
2
September 6, 2012
www.irf.com
IRFS7437-7PPbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
h
i
Min.
Typ.
122
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
150
41
51
99
18
62
78
51
7437
1097
748
1314
1735
Max. Units
Min.
Typ.
Max. Units
–––
–––
285
–––
225
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
Conditions
VDS = 10V, ID = 100A
ID = 100A
VDS = 20V
VGS = 10V
ID = 100A, VDS =0V, VGS = 10V
VDD = 20V
ID = 30A
R G = 2.7
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz
VGS = 0V, VDS = 0V to 32V
VGS = 0V, VDS = 0V to 32V
g
ns
pF
g
i
h
Diode Characteristics
Symbol
IS
Parameter
VSD
trr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
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d
c
Conditions
A
MOSFET symbol
showing the
G
–––
–––
1040
A
integral reverse
p-n junction diode.
–––
1.0
1.3
V
TJ = 25°C, IS = 100A, VGS = 0V
–––
37
–––
ns TJ = 25°C
VR = 34V,
–––
38
–––
TJ = 125°C
IF = 100A
di/dt = 100A/μs
–––
34
–––
nC TJ = 25°C
–––
36
–––
TJ = 125°C
–––
1.8
–––
A
TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
D
S
g
3
September 6, 2012
IRFS7437-7PPbF
10000
10000
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1000
BOTTOM
1000
100
5.0V
10
60μs PULSE WIDTH
BOTTOM
100
5.0V
60μs PULSE WIDTH
Tj = 25°C
Tj = 175°C
1
10
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
10
100
Fig 4. Typical Output Characteristics
10000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1
V DS, Drain-to-Source Voltage (V)
Fig 3. Typical Output Characteristics
1000
100
TJ = 175°C
T J = 25°C
10
VDS = 10V
60μs PULSE WIDTH
1.0
ID = 100A
VGS = 10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
2
3
4
5
6
7
8
9
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
100000
14.0
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Ciss
10000
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
Coss
Crss
1000
100
ID= 100A
12.0
VDS= 32V
VDS= 20V
10.0
8.0
6.0
4.0
2.0
0.0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
4
September 6, 2012
0
20 40 60 80 100 120 140 160 180 200
QG, Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
www.irf.com
IRFS7437-7PPbF
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10000
1000
T J = 175°C
100
T J = 25°C
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1000
1msec
100
10msec
Limited by
package
10
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
1.0
0.1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1
10
100
V DS, Drain-toSource Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode
Forward Voltage
1.0
49
Id = 1.0mA
48
0.9
0.8
47
0.7
46
0.6
Energy (μJ)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
100μsec
45
44
0.5
0.4
0.3
43
0.2
42
0.1
41
0.0
-0.1
40
-5
-60 -40 -20 0 20 40 60 80 100120140160180
0
T J , Temperature ( °C )
10
15
20
25
30
35
40
VDS, Drain-to-Source Voltage (V)
Fig 11. Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance ( m)
5
Fig 12. Typical COSS Stored Energy
10.0
VGS = 6.0V
VGS = 7.0V
8.0
VGS = 8.0V
VGS =10V
6.0
4.0
2.0
0.0
0
200
400
600
800
1000
1200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
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5
September 6, 2012
IRFS7437-7PPbF
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
1E-006
1E-005
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
350
300
EAR , Avalanche Energy (mJ)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 100A
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy vs. Temperature
6
September 6, 2012
www.irf.com
IRFS7437-7PPbF
12
10
IF = 60A
V R = 34V
8
TJ = 25°C
TJ = 125°C
4.0
IRRM (A)
VGS(th) , Gate threshold Voltage (V)
5.0
3.0
ID = 150μA
ID = 1.0mA
2.0
6
4
ID = 1.0A
2
1.0
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
200
T J , Temperature ( °C )
600
800
1000
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig 17. Threshold Voltage vs. Temperature
12
300
10
IF = 100A
V R = 34V
8
TJ = 25°C
TJ = 125°C
QRR (nC)
IRRM (A)
400
diF /dt (A/μs)
6
250
IF = 60A
V R = 34V
200
TJ = 25°C
TJ = 125°C
150
4
100
2
50
0
0
0
200
400
600
800
1000
0
200
diF /dt (A/μs)
400
600
800
1000
diF /dt (A/μs)
Fig. 20 - Typical Stored Charge vs. dif/dt
Fig. 19 - Typical Recovery Current vs. dif/dt
QRR (nC)
300
250
IF = 100A
V R = 34V
200
TJ = 25°C
TJ = 125°C
150
100
50
0
0
200
400
600
800
1000
diF /dt (A/μs)
www.irf.com
Fig. 21 - Typical Stored Charge vs. dif/dt
7
September 6, 2012
IRFS7437-7PPbF
Driver Gate Drive
D.U.T
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
V DD
P.W.
Period
VGS=10V
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
20V
VGS
+
V
- DD
IAS
A
0.01
tp
I AS
Fig 22a. Unclamped Inductive Test Circuit
RD
VDS
Fig 22b. Unclamped Inductive Waveforms
VDS
90%
VGS
D.U.T.
RG
+
- VDD
V10V
GS
10%
VGS
Pulse Width µs
Duty Factor
td(on)
Fig 23a. Switching Time Test Circuit
tr
t d(off)
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50K
12V
tf
.2F
.3F
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
8
September 6, 2012
Qgs1 Qgs2
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
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IRFS7437-7PPbF
D2Pak - 7 Pin Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
September 6, 2012
IRFS7437-7PPbF
D2Pak - 7 Pin Part Marking Information
14
D2Pak - 7 Pin Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
10
September 6, 2012
www.irf.com
IRFS7437-7PPbF
Qualification information†
Qualification level
Moisture Sensitivity Level
RoHS compliant
Industrial††
(per JEDEC JESD47F††† guidelines)
MS L1
D2Pak-7PIN
(per JE DE C J-S TD-020D†††)
Yes
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/
Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information: http:www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101N Sepulveda., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/2012
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11
September 6, 2012