AON7518

AON7518
30V N-Channel MOSFET
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
Top View
VDS
30V
24A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 8.8mΩ
RDS(ON) (at VGS = 4.5V)
< 14mΩ
100% UIS Tested
100% Rg Tested
DFN 3x3 EP
Bottom View
D
Top View
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
C
V
A
90
14
IDSM
TA=70°C
±20
19
IDM
TA=25°C
Units
V
24
ID
TC=100°C
Maximum
30
A
11
Avalanche Current C
IAS
28
A
Repetitive avalanche energy L=0.1mH C
TC=25°C
EAS
39
mJ
Power Dissipation B
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0: Nov 2011
3.1
Steady-State
Steady-State
RθJA
RθJC
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W
2
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
W
9
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
23
PD
Typ
30
60
4.5
°C
Max
40
75
5.4
Units
°C/W
°C/W
°C/W
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AON7518
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
90
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=15A
100
nA
1.8
2.5
V
7.3
8.8
10.8
13.4
11.2
14
A
gFS
Forward Transconductance
VDS=5V, ID=20A
60
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
IGSS
VGS=0V, VDS=15V, f=1MHz
0.5
mΩ
mΩ
S
1
V
24
A
1086
pF
436
pF
34
VGS=0V, VDS=0V, f=1MHz
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
VGS(th)
RDS(ON)
Typ
1
pF
1.5
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
15.6
22
nC
Qg(4.5V) Total Gate Charge
6.9
9.7
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=15V, ID=11A
2.9
nC
1.8
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=11A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF=11A, dI/dt=100A/µs
11.5
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
5
ns
2
ns
16
ns
2
ns
24.5
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Nov 2011
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Page 2 of 6
AON7518
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
50
10V
4V
4.5V
60
30
3.5V
ID(A)
ID (A)
VDS=5V
40
40
20
125°C
20
10
VGS=3V
25°C
0
0
0
1
2
3
4
1
5
Normalized On-Resistance
VGS=4.5V
12
RDS(ON) (mΩ
Ω)
2
2.5
3
3.5
4
1.6
15
9
6
VGS=10V
3
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=15A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
40
1.0E+02
ID=20A
35
1.0E+01
40
30
1.0E+00
25
IS (A)
RDS(ON) (mΩ
Ω)
1.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
20
125°C
1.0E-01
25°C
1.0E-02
15
125°C
1.0E-03
10
5
1.0E-04
25°C
0
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Nov 2011
4
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
1.2
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AON7518
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1800
1400
Capacitance (pF)
VGS (Volts)
1600
VDS=15V
ID=11A
8
6
4
Ciss
1200
1000
800
600
Coss
400
2
Crss
200
0
0
0
3
6
9
12
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
18
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
500
1000.0
10µs
100.0
TJ(Max)=150°C
TC=25°C
400
10.0
100µs
1ms
1s
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
Power (W)
ID (Amps)
10µs
RDS(ON)
300
200
100
0.0
0
0.01
0.1
1
10
100
VDS (Volts)
0.00001 0.0001
Zθ JC Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=5.4°C/W
1
0.1
PD
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Nov 2011
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Page 4 of 6
AON7518
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
Power Dissipation (W)
IAR (A) Peak Avalanche Current
30
TA=25°C
TA=100°C
TA=150°C
20
10
TA=125°C
0
10
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
(Note C)
25
50
75
100
125
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
150
1000
30
100
20
Power (W)
Current rating ID(A)
TA=25°C
10
10
1
0
0
25
50
75
100
125
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
0.0001 0.001
0.1
1
10
100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
150
0.01
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Nov 2011
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Page 5 of 6
AON7518
AON7518
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: Nov 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6