Product specification DMP2160UW P-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data Low On-Resistance 100m @ VGS = -4.5V 120m @ VGS = -2.5V 160m @ VGS = -1.8V Moisture Sensitivity: Level 1 per J-STD-020D Very Low Gate Threshold Voltage VGS(th) ≤ 1V Terminals Connections: See Diagram Below Low Input Capacitance Fast Switching Speed Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.006 grams (approximate) Case: SOT323 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Low Input/Output Leakage Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Drain D SOT323 Gate G S Source TOP VIEW Internal Schematic TOP VIEW Ordering Information (Note 4) Part Number DMP2160UW-7 Notes: Compliance Standard Case SOT323 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information DMF Date Code Key Year Code Month Code 2008 V Jan 1 http://www.twtysemi.com 2009 W Feb 2 Mar 3 YM NEW PRODUCT Features DMF = Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September) 2010 X Apr 4 2011 Y May 5 [email protected] Jun 6 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D 1 of 2 Product specification DMP2160UW Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic NEW PRODUCT Drain-Source Voltage Gate-Source Voltage TA = +25°C TA = +70°C Drain Current (Note 5) Pulsed Drain Current Symbol Value VDSS -20 Units V VGSS ±12 V ID -1.5 -1.2 A IDM -10 A Symbol Value Units PD 350 mW RθJA 360 °C/W TJ, TSTG -55 to +150 °C Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS -20 — — V Test Condition VGS = 0V, ID = -250µA IDSS — — -1.0 µA VDS = -20V, VGS = 0V IGSS — — — — ±100 ±800 nA VGS = ±8V, VDS = 0V VGS = ±12V, VDS = 0V VGS(th) -0.4 -0.6 -0.9 V VDS = VGS, ID = -250µA RDS(ON) — 75 90 120 100 120 160 mΩ VGS = -2.5V, ID = -1.2A Forward Transconductance gFS — 4 — S VDS = -10V, ID = -1.5A Diode Forward Voltage (Note 6) VSD — — -1.0 V VGS = 0V, IS = -1.0A Input Capacitance Ciss — 627 — pF Output Capacitance Coss — 64 — pF Crss — 53 — pF Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance VGS = -4.5V, ID = -1.5A VGS = -1.8V, ID = -1A DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance Notes: VDS = -10V, VGS = 0V f = 1.0MHz 2 3. Device mounted on 1in FR-4 PCB with 2 oz. Copper. t ≤ 10 sec. 4. Short duration pulse test used to minimize self-heating effect. http://www.twtysemi.com [email protected] 2 of 2