Product specification DMP1045U P-CHANNEL ENHANCEMENT MODE MOSFET V(BR)DSS Features and Benefits • • • • • • • • ID RDS(on) max TA = 25°C 31mΩ@ VGS = -4.5V 5.2A 45mΩ@ VGS =-2.5V 4.3A -12V Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) ESD Protected Up To 3kV "Green" Device, Halogen and Antimony Free (Note 2) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0072 grams (approximate) • • • DC-DC Converters Power management functions Analog Switch • Drain SOT-23 D G ESD PROTECTED TO 3kV Top View Gate Gate Protection Diode S Pin Configuration Source Internal Schematic Ordering Information (Note 3) Part Number DMP1045U-7 Notes: Case SOT-23 Packaging 3,000/Tape & Reel 1. No purposefully added lead. Halogen and Antimony Free. Marking Information 15P Date Code Key Year Code Month Code 2010 X Jan 1 http://www.twtysemi.com 2011 Y Feb 2 Mar 3 15P = Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) YM NEW PRODUCT Product Summary 2012 Z Apr 4 May 5 [email protected] 2013 A Jun 6 Jul 7 2014 B Aug 8 Sep 9 2015 C Oct O Nov N Dec D 1 of 2 Product specification DMP1045U Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS Drain-Source Voltage NEW PRODUCT Gate-Source Voltage Value -12 Units V VGSS ±8 V Continuous Drain Current (Note 4) VGS = -4.5V Steady State TA = 25°C TA = 70°C ID 4.0 3.1 A Continuous Drain Current (Note 4) VGS = -2.5V Steady State TA = 25°C TA = 70°C ID 3.3 2.6 A Continuous Drain Current (Note 5) VGS = -4.5V Steady State TA = 25°C TA = 70°C ID 5.2 4.2 A Continuous Drain Current (Note 5) VGS = -2.5V Steady State TA = 25°C TA = 70°C ID 4.3 3.4 A Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10us pulse, duty cycle=1%) (Note 4) Thermal Characteristics IS 2 A IDM 40 A Symbol PD Value 0.8 Units W RθJA 168 °C/W PD 1.3 W RθJA 99 °C/W RθJc 14.8 °C/W TJ, TSTG -55 to +150 °C @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25 C Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Symbol Min Typ Max Unit Test Condition BVDSS -12 - - V VGS = 0V, ID = -250μA IDSS - - -1.0 μA VDS = -12V, VGS = 0V IGSS - - ±10 μA VGS = ±8V, VDS = 0V VGS(th) -0.3 -0.55 -1.0 V VDS = VGS, ID = -250μA 26 31 31 45 mΩ VGS = -2.5V, ID = -3.5A VGS = -4.5V, ID = -4.0A RDS (ON) - 45 75 Forward Transfer Admittance |Yfs| - 12 - S VDS = -5V, ID = -4A Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistnace SWITCHING CHARACTERISTICS (Note 7) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VSD - -0.6 - V VGS = 0V, IS = -1A Ciss Coss Crss Rg - 1357 504 235 14.1 - pF pF pF Ω Qg Qgs Qgd tD(on) tr tD(off) tf - 15.8 2.0 3.9 15.7 23.3 91.2 106.9 - nC nC nC ns ns ns ns Notes: VGS = -1.8V, ID = -2.7A VDS = -10V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VGS = -4.5V, VDS = -10V, ID = -4A VDS = -10V, VGS = -4.5V, RL = 2.5Ω, RG = 3.0Ω 2. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 3. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate http://www.twtysemi.com [email protected] 2 of 2