TYSEMI BAP64-03

Product specification
BAP64-03
SOD-323
+0.1
1.7-0.1
+0.1
1.3-0.1
High voltage, current controlled
+0.05
0.85-0.05
+0.05
0.3-0.05
Features
Unit: mm
RF resistor for RF attenuators and switches
Low diode capacitance
+0.1
2.6-0.1
1.0max
Low diode forward resistance
0.375
0.475
Low series inductance
+0.05
0.1-0.02
For applications up to 3 GHz.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Min
Max
Unit
continuous reverse voltage
VR
175
V
continuous forward current
IF
100
mA
500
mW
total power dissipation
Ptot
Ts = 90
storage temperature
Tstg
-65
+150
junction temperature
Tj
-65
+150
thermal resistance from junction to soldering point
Rth j-s
120
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
forward voltage
Conditions
VF
reverse leakage current
diode capacitance
Cd
diode forward resistance
rD
0.95
V
V
VR = 20 V
1
nA
pF
VR = 0; f = 1 MHz
0.48
VR = 1 V; f = 1 MHz
0.35
0.5
VR = 20V; f = 1 MHz
0.23
0.35
IF = 0.5 mA; f = 100 MHz; note 1
20
40
IF = 1 mA; f = 100 MHz; note 1
10
20
IF = 10 mA; f = 100 MHz; note 1
2
3.8
IF = 100 mA; f = 100 MHz; note 1
0.7
1.35
RL = 100
Unit
10
L
series inductance
Max
1.1
when switched from IF = 10 mA to IR = 6 mA;
charge carrier life time
Typ
VR = 175 V
IF = 50 mA
IR
Min
1.55
ns
1.68
nH
;measured at IR = 3 mA
LS
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Marking
Marking
A3
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