Product specification BAP65-03 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features High voltage, current controlled +0.1 2.6-0.1 1.0max RF resistor for RF switches Low diode capacitance 0.375 0.475 +0.05 0.1-0.02 Low diode forward resistance (low loss) Very low series inductance. Absolute Maximum Ratings Ta = 25 Parameter Symbol Min Max Unit continuous reverse voltage VR 30 V continuous forward current IF 100 mA P tot 500 mW total power dissipation TS 90 storage temperature T stg -65 +150 junction temperature Tj -65 +150 thermal resistance from junction to soldering point http://www.twtysemi.com R th j-s [email protected] 120 K/W 4008-318-123 1 of 2 Product specification BAP65-03 Electrical Characteristics Ta = 25 Parameter Symbol Conditions Typ Max forward voltage VF IF = 50 mA 0.95 1.1 V reverse leakage current IR VR = 20 V 20 nA diode capacitance Cd diode forward resistance rD insertion loss |s21| 0.9 0.5 0.8 1 IF = 5 mA; f = 100 MHz; note 1 0.65 0.95 IF = 10 mA; f = 100 MHz; note 1 0.56 0.9 IF = 100 mA; f = 100 MHz 0.35 |s21|2 insertion loss 0.55 VR = 3 V; f = 1 MHz 0.375 |s21|2 insertion loss VR = 1 V; f = 1 MHz VR = 20V; f = 1 MHz |s21|2 insertion loss 0.65 IF = 1 mA; f = 100 MHz; note 1 |s21|2 isolation VR = 0; f = 1 MHz 2 VR = 0; f = 900 MHz 10.2 VR = 0; f = 1800 MHz 5.8 VR = 0; f = 2450 MHz 4.1 VR = 1; f = 900 MHz 0.1 VR = 1; f = 1800 MHz 0.14 VR = 1; f = 2450 MHz 0.18 VR = 5; f = 900 MHz 0.06 VR = 5; f = 1800 MHz 0.1 VR = 5; f = 2450 MHz 0.14 VR = 10; f = 900 MHz 0.06 VR = 10; f = 1800 MHz 0.1 VR = 10; f = 2450 MHz 0.13 VR = 100; f = 900 MHz 0.05 VR = 100; f = 1800 MHz 0.1 VR = 100; f = 2450 MHz 0.14 when switched from IF = 10 mA to IR = 6 mA; charge carrier life time L RL = 100 series inductance LS Unit pF dB dB dB dB dB 0.17 ìs 1.5 nH ;measured at IR = 3 mA IF = 100 mA; f = 100 MHz Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. Marking Marking D3 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2