RoHS 2SB1260 2SB1260 FEATURES Power dissipation PCM: 0.5 Collector current ICM: -1 Collector-base voltage V(BR)CBO: -80 1. BASE W (Tamb=25℃) 2. COLLECTOR A 2 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter IC R T C E L Emitter-base breakdown voltage DC current gain E Collector-emitter saturation voltage J E Transition frequency CLASSIFICATION OF hFE Rank W Range O Test conditions MIN MAX UNIT Ic=-50µA , IE=0 -80 V V(BR)CEO IC= -1mA , IB=0 -80 V V(BR)EBO IE=-50µA, IC=0 -5 V ICBO VCB=-60 V , IE=0 -1 µA IEBO VEB=-4 V , -1 µA V(BR)CBO Collector-emitter breakdown voltage C unless otherwise specified) Symbol Collector-base breakdown voltage N O 3 V TJ, Tstg: -55℃ to +150℃ Emitter cut-off current 1 3. EMITTER Operating and storage junction temperature range Collector cut-off current D T ,. L SOT-89 TRANSISTOR (PNP) hFE VCE(sat) IC=0 VCE=-3V, IC= -0.1A 82 IC=-500 mA, IB= -50mA 390 -0.4 V VCE= -5V, IC=- 50mA fT 80 MHz f = 30MHz P Q R 82-180 120-270 180-390 Marking WEJ ELECTRONIC CO. ZL Http:// www.wej.cn E-mail:[email protected]