Datasheet

TPSMB6.8 thru TPSMB43A
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction
passivation
optimized
design
passivated anisotropic rectifier technology
• TJ = 185 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• 600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamping capability
DO-214AA (SMBJ)
• Very fast response time
• Low incremental surge resistance
PRIMARY CHARACTERISTICS
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
VBR
6.8 V to 43 V
VWM
5.50 V to 36.8 V
PPPM
600 W
IFSM
75 A
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
TJ max.
185 °C
Polarity
Uni-directional
Package
DO-214AA (SMBJ)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive and telecommunication.
Case: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
per
Polarity: Color band denotes cathode end

MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) (1)(2)
Peak pulse current with a 10/1000 μs waveform (fig. 3)
(1)
Peak forward surge current 8.3 ms single half sine-wave (2)(3)
Maximum instantaneous forward voltage at 50 A (2)(3)
Operating junction and storage temperature range
SYMBOL
VALUE
UNIT
PPPM
600
W
IPPM
See table next page
A
IFSM
75
A
VF
3.5
V
TJ, TSTG
-65 to +185
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads at each terminal
(3) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum
Revision: 06-Jun-14
Document Number: 88406
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPSMB6.8 thru TPSMB43A
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR (1) AT IT
(V)
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
IR
(μA)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
TJ = 150 °C
ID
(μA)
MAXIMUM
PEAK
PULSE
SURGE
CURRENT
IPPM (2)
(A)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC
(V)
MIN.
MAX.
TPSMB6.8
KDP
6.12
7.48
10
5.5
500
1000
55.6
10.8
TPSMB6.8A
KEP
6.45
7.14
10
5.8
500
1000
57.1
10.5
TPSMB7.5
KFP
6.75
8.25
10
6.05
250
500
51.3
11.7
TPSMB7.5A
KGP
7.13
7.88
10
6.4
250
500
53.1
11.3
TPSMB8.2
KHP
7.38
9.02
10
6.63
100
200
48
12.5
TPSMB8.2A
KKP
7.79
8.61
10
7.02
100
200
49.6
12.1
TPSMB9.1
KLP
8.19
10
1
7.37
25
50
43.5
13.8
TPSMB9.1A
KMP
8.65
9.55
1
7.78
25
50
44.8
13.4
TPSMB10
KNP
9
11
1
8.1
5
20
40
15
TPSMB10A
KPP
9.5
10.5
1
8.55
5
20
41.4
14.5
TPSMB11
KQP
9.9
12.1
1
8.92
2
5
37
16.2
TPSMB11A
KRP
10.5
11.6
1
9.4
2
5
38.5
15.6
TPSMB12
KSP
10.8
13.2
1
9.72
2
5
34.7
17.3
TPSMB12A
KTP
11.4
12.6
1
10.2
2
5
35.9
16.7
TPSMB13
KUP
11.7
14.3
1
10.5
2
5
31.6
19
TPSMB13A
KVP
12.4
13.7
1
11.1
2
5
33
18.2
TPSMB15
KWP
13.5
16.5
1
12.1
1
5
27.3
22
TPSMB15A
KXP
14.3
15.8
1
12.8
1
5
28.3
21.2
TPSMB16
KYP
14.4
17.6
1
12.9
1
5
25.5
23.5
TPSMB16A
KZP
15.2
16.8
1
13.6
1
5
26.7
22.5
TPSMB18
LDP
16.2
19.8
1
14.5
1
5
22.6
26.5
TPSMB18A
LEP
17.1
18.9
1
15.3
1
5
23.8
25.2
TPSMB20
LFP
18
22
1
16.2
1
5
20.6
29.1
TPSMB20A
LGP
19
21
1
17.1
1
5
21.7
27.7
TPSMB22
LHP
19.8
24.2
1
17.8
1
5
18.8
31.9
TPSMB22A
LKP
20.9
23.1
1
18.8
1
5
19.6
30.6
TPSMB24
LLP
21.6
26.4
1
19.4
1
5
17.3
34.7
TPSMB24A
LMP
22.8
25.2
1
20.5
1
5
18.1
33.2
TPSMB27
LNP
24.3
29.7
1
21.8
1
5
15.3
39.1
TPSMB27A
LPP
25.7
28.4
1
23.1
1
5
16
37.5
TPSMB30
LQP
27
33
1
24.3
1
5
13.8
43.5
TPSMB30A
LRP
28.5
31.5
1
25.6
1
5
14.5
41.4
TPSMB33
LSP
29.7
36.3
1
26.8
1
5
12.6
47.7
TPSMB33A
LTP
31.4
34.7
1
28.2
1
5
13.1
45.7
TPSMB36
LUP
32.4
39.6
1
29.1
1
5
11.5
52
TPSMB36A
LVP
34.2
37.8
1
30.8
1
5
12
49.9
TPSMB39
LWP
35.1
42.9
1
31.6
1
5
10.6
56.4
TPSMB39A
LXP
37.1
41
1
33.3
1
5
11.1
53.9
TPSMB43
LYP
38.7
47.3
1
34.8
1
5
9.7
61.9
TPSMB43A
LZP
40.9
45.2
1
36.8
1
5
10.1
59.3
Notes
(1) V
BR measured after IT applied for 300 μs, IT = square wave pulse or equivalent
(2) Surge current waveform per fig. 3 and derated per fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
Revision: 06-Jun-14
Document Number: 88406
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPSMB6.8 thru TPSMB43A
www.vishay.com
Vishay General Semiconductor
ORDERING INFORMATION (Example)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TPSMB6.8AHE3/52T (1)
PREFERRED P/N
0.096
52T
750
7" diameter plastic tape and reel
TPSMB6.8AHE3/5BT (1)
0.096
5BT
3200
13" diameter plastic tape and reel
Note
(1) Automotive grade
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
150
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
10
1.0
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1 µs
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
Peak Value
IPPM
100
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
0
1.0
2.0
3.0
td - Pulse Width (s)
t - Time (ms)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 3 - Pulse Waveform
4.0
10 000
100
Junction Capacitance (pF)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
IPPM - Peak Pulse Current, % IRSM
PPPM - Peak Pulse Power (kW)
100
75
50
25
VR measured
at Zero Bias
1000
VR measured at
Stand-Off Voltage, VWM
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0
0
50
100
150
200
1
10
TJ - Initial Temperature (°C)
VBR - Breakdown Voltage (V)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 4 - Typical Junction Capacitance
100
Revision: 06-Jun-14
Document Number: 88406
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPSMB6.8 thru TPSMB43A
www.vishay.com
Vishay General Semiconductor
100
Peak Forward Surge Current (A)
TJ = TJ max.
8.3 ms Single Half Sine-Wave
10
1
100
10
Number of Cycles at 60 Hz
Fig. 5 - Maximum Non-Repetitive/Peak Forward Surge Current
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMBJ)
Cathode Band
Mounting Pad Layout
0.085 (2.159)
MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
MIN.
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.008
(0.203)
Max.
0.220 REF.
Revision: 06-Jun-14
Document Number: 88406
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000