VISHAY 1N6269A

1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A
www.vishay.com
Vishay General Semiconductor
TransZorb® Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
Case Style 1.5KE
• AEC-Q101 qualified
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
VBR uni-directional
6.8 V to 540 V
VBR bi-directional
6.8 V to 440 V
PPPM
1500 W
PD
6.5 W
IFSM (uni-directional only)
200 A
TJ max.
175 °C
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case: Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C or CA suffix (e.g.
1.5KE440CA)
Eletrical characteristics apply in both directions.
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Note
• 1.5KE250A to 1.5KE540A and 1.5KE250CA to 1.5KE440CA for
commercial grade only
Polarity: For uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
SYMBOL
(1)
(fig. 1)
Peak pulse current with a 10/1000 μs waveform (1)
Power dissipation on infinite heatsink at TL = 75 °C (fig. 5)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Maximum instantaneous forward voltage at 100 A for uni-directional only (3)
Operating junction and storage temperature range
(2)
VALUE
UNIT
PPPM
1500
W
IPPM
See next table
A
PD
6.5
W
IFSM
200
A
VF
3.5/5.0
V
TJ, TSTG
- 55 to 175
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3) V = 3.5 V for 1.5KE220A and below; V = 5.0 V for 1.5KE250A and above
F
F
Document Number: 88301
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 22-Nov-11
1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
JEDEC
TYPE
NUMBER
GENERAL
SEMICONDUCTOR
PART NUMBER
BREAKDOWN
MAXIMUM
VOLTAGE
TEST
STAND-OFF REVERSE
VBR AT IT (1) CURRENT VOLTAGE
LEAKAGE
(V)
IT
VWM
AT VWM
(mA)
(V)
ID (4)
MIN. MAX.
(μA)
6.45
7.14
10
5.80
1000
7.13
7.88
10
6.40
500
7.79
8.61
10
7.02
200
8.65
9.55
1.0
7.78
50
9.50
10.5
1.0
8.55
10
10.5
11.6
1.0
9.40
5.0
11.4
12.6
1.0
10.2
5.0
12.4
13.7
1.0
11.1
5.0
14.3
15.8
1.0
12.8
1.0
15.2
16.8
1.0
13.6
1.0
17.1
18.9
1.0
15.3
1.0
19.0
21.0
1.0
17.1
1.0
20.9
23.1
1.0
18.8
1.0
22.8
25.2
1.0
20.5
1.0
25.7
28.4
1.0
23.1
1.0
28.5
31.5
1.0
25.6
1.0
31.4
34.7
1.0
28.2
1.0
34.2
37.8
1.0
30.8
1.0
37.1
41.0
1.0
33.3
1.0
40.9
45.2
1.0
36.8
1.0
44.7
49.4
1.0
40.2
1.0
48.5
53.6
1.0
43.6
1.0
53.2
58.8
1.0
47.8
1.0
58.9
65.1
1.0
53.0
1.0
64.6
71.4
1.0
58.1
1.0
71.3
78.8
1.0
64.1
1.0
77.9
86.1
1.0
70.1
1.0
86.5
95.5
1.0
77.8
1.0
95.0
105
1.0
85.5
1.0
105
116
1.0
94.0
1.0
114
126
1.0
102
1.0
124
137
1.0
111
1.0
143
158
1.0
128
1.0
152
168
1.0
136
1.0
162
179
1.0
145
1.0
171
189
1.0
154
1.0
190
210
1.0
171
1.0
209
231
1.0
185
1.0
237
263
1.0
214
1.0
285
315
1.0
256
1.0
333
368
1.0
300
1.0
380
420
1.0
342
1.0
418
462
1.0
376
1.0
456
504
1.0
408
1.0
485
535
1.0
434
1.0
513
567
1.0
459
1.0
MAXIMUM MAXIMUM
MAXIMUM
PEAK
CLAMPING TEMPERATURE
PULSE
VOLTAGE
COEFFICENT
CURRENT
AT IPPM
OF VBR
IPPM (2)
VC (V)
(%/°C)
(A)
143
10.5
0.057
133
11.3
0.061
124
12.1
0.065
112
13.4
0.068
103
14.5
0.073
96.2
15.6
0.075
89.8
16.7
0.078
82.4
18.2
0.081
70.8
21.2
0.084
66.7
22.5
0.086
59.5
25.2
0.089
54.2
27.7
0.09
49.0
30.6
0.092
45.2
33.2
0.094
40.0
37.5
0.096
36.2
41.4
0.097
32.8
45.7
0.098
30.1
49.9
0.099
27.8
53.9
0.1
25.3
59.3
0.101
23.1
64.8
0.101
21.4
70.1
0.102
19.5
77.0
0.103
17.6
85.0
0.104
16.3
92.0
0.104
14.6
104
0.105
13.3
113
0.105
12.0
125
0.106
10.9
137
0.106
9.9
152
0.107
9.1
165
0.107
8.4
179
0.107
7.2
207
0.106
6.8
219
0.108
6.4
234
0.108
6.1
246
0.108
5.5
274
0.108
4.6
328
0.108
4.4
344
0.110
3.6
414
0.110
3.1
482
0.110
2.7
548
0.110
2.5
602
0.110
2.28
658
0.110
2.15
698
0.110
2.03
740
0.110
(+)1.5KE6.8A
1N6267A
(+)1.5KE7.5A
1N6268A
(+)1.5KE8.2A
1N6269A
(+)1.5KE9.1A
1N6270A
(+)1.5KE10A
1N6271A
(+)1.5KE11A
1N6272A
(+)1.5KE12A
1N6273A
(+)1.5KE13A
1N6274A
(+)1.5KE15A
1N6275A
(+)1.5KE16A
1N6276A
(+)1.5KE18A
1N6277A
(+)1.5KE20A
1N6278A
(+)1.5KE22A
1N6279A
(+)1.5KE24A
1N6280A
(+)1.5KE27A
1N6281A
(+)1.5KE30A
1N6282A
(+)1.5KE33A
1N6283A
(+)1.5KE36A
1N6284A
(+)1.5KE39A
1N6285A
(+)1.5KE43A
1N6286A
(+)1.5KE47A
1N6287A
(+)1.5KE51A
1N6288A
(+)1.5KE56A
1N6289A
(+)1.5KE62A
1N6290A
(+)1.5KE68A
1N6291A
(+)1.5KE75A
1N6292A
(+)1.5KE82A
1N6293A
(+)1.5KE91A
1N6294A
(+)1.5KE100A
1N6295A
(+)1.5KE 110A
1N6296A
(+)1.5KE120A
1N6297A
(+)1.5KE130A
1N6298A
(+)1.5KE150A
1N6299A
(+)1.5KE160A
1N6300A
(+)1.5KE170A
1N6301A
1N6302A
1.5KE180A
1N6303A
1.5KE200A*
1.5KE220A*
1.5KE250A
1.5KE300A
1.5KE350A
1.5KE400A
1.5KE440A
1.5KE480A
1.5KE510A
1.5KE540A
Notes
(1) Pulse test: t ≤ 50 ms
p
(2) Surge current waveform per fig. 3 and derate per fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE CA62.35
(4) For bi-directional types with V 10 V and less the I limit is doubled
R
D
* Bi-directional versions are UL approved under component across the line protection, ULV1414 file number E108274 (1.5KE200CA,
1.5KE220CA)
(+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
Document Number: 88301
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 22-Nov-11
1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Typical thermal resistance, junction to ambient
RθJA
75
Typical thermal resistance, junction to lead
RθJL
15.4
UNIT
°C/ W
ORDERING INFORMATION (Example)
PREFERRED PIN
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.5KE6.8A-E3/54
0.968
54
1400
13" diameter paper tape and reel
1.5KE6.8AHE3/54 (1)
0.968
54
1400
13" diameter paper tape and reel
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
150
IPPM - Peak Pulse Current, % IRSM
PPPM - Peak Pulse Power (kW)
100
10
1
0.1
0.1 µs
Peak Value
IPPM
100
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
1.0
0
td - Pulse Width (s)
3.0
2.0
4.0
t - Time (ms)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 3 - Pulse Waveform
100
10 000
Uni-Directional
Bi-Directional
75
CJ - Capacitance (pF)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
50
25
VR = 0
1000
VR = Rated
Stand-Off Voltage
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0
0
25
50
75
100
125
150
175
200
TJ - Initial Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
10
5
10
100
500
VBR - Breakdown Voltage (V)
Fig. 4 - Typical Junction Capacitance
Document Number: 88301
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 22-Nov-11
1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A
www.vishay.com
Vishay General Semiconductor
8.0
ΔVC - Incremental Clamping Voltage
100
PD - Power Dissipation (W)
7.0
6.0
5.0
4.0
3.0
L = 0.375" (9.5 mm)
Lead Lengths
2.0
1.0
0
25
50
75
100
125
150
175
20
1.5KE75
10
1.5KE39
2.0
1.5KE33
1.5KE6.8
1.5KE9.1
1.0
0.2
0.5
200
1
10
2
50
TL - Lead Temperature (°C)
IPP - Peak Pulse Current (A)
Fig. 5 - Power Derating Curve
Fig. 8 - Incremental Clamping Voltage Curve (Uni-directional)
100
200
TJ = TJ max.
8.3 ms Single Half Sine-Wave
ΔVC - Incremental Clamping Voltage
Peak Forward Surge Current (A)
1.5KE200
1.5KE130
0.1
0
100
10
1
Waveform:
10/1000 µs Impulse
ΔVC = VC - VBR
100
1.5KE200C
20
10
1.5KE75C
1.5KE39C
1.5KE30C
1.5KE15C
11C
1.5KE7.5C
2.0
1.0
0.2
0.1
0.5
10
2
1
10
20
50
Number of Cycles at 60 Hz
IPP - Peak Pulse Current (A)
Fig. 6 - Maximum Non-Repetitive Forward Surge Current
Uni-Directional only
Fig. 9 - Incremental Clamping Voltage Curve (Bi-directional)
100
Waveform:
8/20 µs Impulse
ΔVC = VC - VBR
1.5KE200
1.5KE130
20
1.5KE100
10
1.5KE75
2.0
1.5KE39
1.5KE33
1.5KE6.8
1.5KE9.1
1.5KE18
1.5KE12
1.0
0.2
ΔVC - Incremental Clamping Voltage
100
ΔVC - Incremental Clamping Voltage
Waveform:
10/1000 µs Impulse
ΔVC = VC - VBR
20
Waveform:
8/20 µs Impulse
ΔVC = VC - VBR
1.5KE200C
1.5KE75C
10
1.5KE39C
1.5KE30C
1.5KE15C
2
1.5KE11C
1
1.5KE7.5C
0.2
0.1
0.1
0.5
1
2
10
20
50
0.5
1
2.0
10
20
50
IPP - Peak Pulse Current (A)
IPP - Peak Pulse Current (A)
Fig. 7 - Incremental Clamping Voltage Curve (Uni-Directional)
Fig. 10 - Incremental Clamping Voltage Curve (Bi-Directional)
Document Number: 88301
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 22-Nov-11
1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A
www.vishay.com
Vishay General Semiconductor
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
10
1
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.4
0.8
1.2
1.6
1
0.1
0.001
0.1
0
10
2.0
0.01
0.1
1
10
100
1000
tp - Pulse Duration (s)
Instantaneous Forward Voltage (V)
Fig. 11 - Instantaneous Forward Voltage Characteristics Curve
Fig. 12 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style 1.5KE
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.042 (1.07)
0.038 (0.96)
DIA.
APPLIACTION NOTES
• This series of Silicon Transient Suppressors is used in
applications where large voltage transients can
permanently damage voltage-sensitive components.
• The TVS diode can be used in applications where
induced lightning on rural or remote transmission
lines presents a hazard to electronic circuitry
(ref: R.E.A. specification P.E. 60).
• This Transient Voltage Suppressor diode has a pulse
power rating of 1500 W for 1 ms. The response time of
TVS diode clamping action is effectively instantaneous
(1 x 10-9 s bi-directional); therefore, they can protect
integrated circuits, MOS devices, hybrids, and other
voltage sensitive semiconductors and components. TVS
diodes can also be used in series or parallel to increase
the peak power ratings.
Document Number: 88301
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 22-Nov-11
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 12-Mar-12
1
Document Number: 91000