V10P20 Datasheet

V10P20
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.59 V at IF = 5 A
FEATURES
®
TMBS
®
eSMP Series
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
K
• Low forward voltage drop, low power losses
• High efficiency operation
1
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
2
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TO-277A (SMPC)
K
Anode 1
Cathode
Anode 2
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters and polarity protection
applications.
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
200 V
IFSM
180 A
VF at IF = 10 A
0.67 V
TJ max.
150 °C
Package
TO-277A
Diode variation
Single
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free,
RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated VR)
Operating junction and storage temperature range
V10P20
UNIT
V1020
VRRM
200
V
(1)
10
IF (2)
2.4
IFSM
180
A
dV/dt
10 000
V/μs
TJ, TSTG
- 40 to + 150
°C
IF
A
Notes
(1) Mounted on 30 mm x 30 mm pad areas aluminum PCB
(2) Free air, mounted on recommended copper pad area
Revision: 15-Aug-13
Document Number: 89316
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10P20
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 5.0 A
TA = 25 °C
IF = 10 A
Instantaneous forward voltage
SYMBOL
VF (1)
IF = 5.0 A
TA = 125 °C
IF = 10 A
VR = 180 V
Reverse current
VR = 200 V
TYP.
MAX.
0.78
-
0.98
1.34
0.59
-
UNIT
V
0.67
0.75
TA = 25 °C
3.6
-
μA
TA = 125 °C
3.5
-
mA
8.6
400
μA
5.8
30
mA
TA = 25 °C
IR (2)
TA = 125 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
RJA
Typical thermal resistance
V10P20
(1)
UNIT
80
RJM (2)
°C/W
4
Notes
(1) Free air, mounted on recommended copper pad area; thermal resistance R
JA - junction to ambient
(2) Mounted on 30 mm x 30 mm Al PCB; thermal resistance R
JM - junction to mount
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
V10P20-M3/86A
0.10
86A
1500
7" diameter plastic tape and reel
V10P20-M3/87A
0.10
87A
6500
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
9
Mounted on Al PCB, TM = 121 °C
8
6
Mounted on Recommended
Copper Pad Area (RθJA = 80 °C/W)
4
D = 0.5 D = 0.8
D = 0.3
8
10
Average Power Loss (W)
Average Forward Current (A)
12
2
7
D = 0.2
6
D = 1.0
D = 0.1
5
4
T
3
2
1
0
D = tp/T
tp
0
0
25
50
75
100
125
150
0
2
4
6
8
10
12
Ambient Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 15-Aug-13
Document Number: 89316
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10P20
www.vishay.com
Vishay General Semiconductor
10 000
TA = 125 °C
10
TA = 100 °C
1
1000
100
TA = 25 °C
10
0.1
0.1
0.2
0
0.4
0.8
0.8
1.0
1.2
1.4
1.6
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
0.0001
10
20
30
40
50
60
70
80
90
100
100
Junction to Ambient
10
1
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 15-Aug-13
Document Number: 89316
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10P20
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-277A (SMPC)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
Conform to JEDEC TO-277A
Revision: 15-Aug-13
Document Number: 89316
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000