AON6702 - Digi-Key

AOS Semiconductor
Product Reliability Report
AON6702/AON6702L,
rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
495 Mercury Drive
Sunnyvale, CA 94085
U.S.
Tel: (408) 830-9742
www.aosmd.com
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This AOS product reliability report summarizes the qualification result for AON6702. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AON6702 passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I.
II.
III.
IV.
V.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
Quality Assurance Information
I. Product Description:
SRFETTM AON6702/L uses advanced trench technology with a monolithically integrated Schottky
diode to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a low
side switch in SMPS, load switching and general purpose applications.
- RoHS compliant
- AON6702L is Halogen free
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II. Die / Package Information:
Process
Package Type
Lead Frame
Die Attach
Bond wire
Mold Material
Filler % (Spherical/Flake)
Flammability Rating
Backside Metallization
Moisture Level
AON6702
AON6702L (Green Compound)
Standard sub-micron
Low voltage N channel process
DFN 5×6_8L
A194 (FH)
Solder Paste
Plate-1 copper 6 mils
Epoxy resin with silica filler
90/10
UL-94 V-0
Ti / Ni / Ag
Up to Level 1 *
Standard sub-micron
Low voltage N channel process
DFN 5×6_8L
A194 (FH)
Solder Paste
Plate-1 copper 6 mils
Epoxy resin with silica filler
100/0
UL-94 V-0
Ti / Ni / Ag
Up to Level 1*
Note * based on info provided by assembler and mold compound supplier
III. Result of Reliability Stress for AON6702 (Standard) & AON6702L (Green)
Number
of
Failures
Test Item
Test Condition
Time
Point
Lot Attribution
Total
Sample
size
Solder
Reflow
Precondition
Standard: 1hr PCT+3
cycle [email protected]°c
Green: 168hr 85°c
/85%RH +3 cycle reflow
@260°c
Temp = 150°c ,
Vgs=100% of Vgsmax
0hr
Standard: 24 lots
4022 pcs
0
(Note B**)
2 lot
82 pcs
0
1000 hrs
(Note A*)
77+5 pcs /
lot
168 / 500
hrs
2 lot
1000 hrs
(Note A*)
Standard: 12 lots
HTGB
HTRB
HAST
Pressure Pot
Temperature
Cycle
Temp = 150°c ,
Vds=80% of Vdsmax
168 / 500
hrs
130 +/- 2°c , 85%RH,
33.3 psi, Vgs = 80% of
Vgs max
100 hrs
121°c , 29.7psi,
RH=100%
96 hrs
-65°c to 150°c ,
air to air
0
77+5 pcs /
lot
660 pcs
0
Standard: 17 lots
50+5 pcs /
lot
1394 pcs
0
(Note B**)
Standard: 24 lots
77+5 pcs /
lot
1968 pcs
0
(Note B**)
77+5 pcs /
lot
(Note B**)
250 / 500
cycles
82 pcs
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III. Result of Reliability Stress for AON6702 (Standard) & AON6702L (Green)
Continues
DPA
Internal Vision
Cross-section
X-ray
CSAM
NA
5
5
5
5
5
5
0
NA
5
5
0
Bond Integrity
Room Temp
150°c bake
150°c bake
0hr
250hr
500hr
40
40
40
40 wires
40 wires
40 wires
0
Solderability
245°c
5 sec
15
15 leads
0
Note A: The HTGB and HTRB reliability data presents total of available AON6702 and
AON6702L burn-in data up to the published date.
Note B: The pressure pot, temperature cycle and HAST reliability data for AON6702 and
AON6702L comes from the AOS generic package qualification data.
IV. Reliability Evaluation
FIT rate (per billion): 21.63
MTTF = 5279years
In general, 500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of
lifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an activation
energy of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability
group also routinely monitors the product reliability up to 1000 hr at and performs the necessary
failure analysis on the units failed for reliability test(s).
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size of the selected product (AON6702). Failure Rate Determination is based on JEDEC
Standard JESD 85. FIT means one failure per billion hours.
Failure Rate = Chi2 x 109 / [2 (N) (H) (Af)] = 1.83 x 109 / [2 (2X164) (500) (258)] = 21.63
MTTF = 109 / FIT =4.62 x 107hrs = 5279 years
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
Af
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
130 deg C
150 deg C
258
87
32
13
5.64
2.59
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Tjs = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tju =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV/K
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V. Quality Assurance Information
Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual.
Guaranteed Outgoing Defect Rate: < 25 ppm
Quality Sample Plan: conform to Mil-Std-105D
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