汕头华汕电子器件有限公司 N-Channel Enhancement Insulated Gate Bipolar Transistor HGH25N120A █ Applications TO-3P • Induction heating and Microwave oven • Soft switching applications █ Features • Low saturation voltage, Vce(on)(typ)=2.1V@Vge=15V • High input impedance • Field stop trench technology offer superior conduction and switching performances, • High speed switching 1―Gate，G 2―Collector，C 3―Emitter，E █ Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 1200 V VGES Gate to Emitter Voltage ±30 V Collector Current（TC = 25℃） 50 A Collector Current（TC = 100℃） 25 A Pulsed Collector Current 80 A 15 A 200 W 80 W -55～+150 ℃ -55～+150 ℃ IC ICM (1) IF PD TJ Tstg Diode continuous Forward current （TC = 100℃） Maximum Power Dissipation（TC = 25℃） Maximum Power Dissipation（TC = 100℃） Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 TL 300 ℃ seconds Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. █ Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case 0.44 ℃/W RθJC(Diode) Thermal Resistance, Junction to Case 2.24 ℃/W 40 ℃/W RθJA Thermal Resistance, Junction to Ambient N-Channel Enhancement Insulated Gate Bipolar Transistor 汕头华汕电子器件有限公司 HGH25N120A █ Electrical Characteristics of the IGBT（Tc＝25℃,unless otherwise noted） Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector to Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250μA V 1200 VCE = 1200V, VGE = 0V 250 μA VGE = ±30V, VCE = 0V ±250 nA 6.5 V 2.7 V On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250μA, VCE = VGE 3.0 IC = 20A, VGE = 15V； TC = 25℃ 2.1 Dynamic Characteristics Cies Coes Cres 130 pF pF 50 pF Turn-On Delay Time 40 ns Rise Time 70 ns ns ns mJ mJ mJ nC nC nC Input Capacitance Output Capacitance Reverse Transfer Capacitance 840 VCE = 25V, VGE = 0V, f= 100KHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-Off Delay Time Fall Time Turn-On Switching Loss VCC = 600V, IC = 20A, RG = 28Ω, VGE = 15V, Inductive Load, TC = 25℃ Total Switching Loss 3.1 Total Gate Charge Gate to Emitter Charge Gate to Collector Charge Parameter Diode Forward Voltage trr Diode Reverse Recovery Time Qrr 0.9 2.2 VFM Irr 350 Turn-Off Switching Loss Diode peak Reverse Recovery Current Diode Reverse Recovery Charge 186 15 79 VCE = 600V, IC = 20A, VGE = 15V █ Electrical Characteristics of the Diode Symbol 80 230 20 110 (TC = 25℃ unless otherwise noted) Test Conditions IF = 15A IES =15A, dI/dt =200A/μs Min. Typ. Max. Units 1.7 2.7 V 210 330 ns 27 40 A 2.8 6.6 µC 汕头华汕电子器件有限公司 █ Typical Performance Characteristics N-Channel Enhancement Insulated Gate Bipolar Transistor HGH25N120A 汕头华汕电子器件有限公司 █ Typical Performance Characteristics N-Channel Enhancement Insulated Gate Bipolar Transistor HGH25N120A 汕头华汕电子器件有限公司 █ Typical Performance Characteristics N-Channel Enhancement Insulated Gate Bipolar Transistor HGH25N120A 汕头华汕电子器件有限公司 █ Typical Performance Characteristics N-Channel Enhancement Insulated Gate Bipolar Transistor HGH25N120A