KSMD10N20C / KS,MU10N20C 200V N-Channel MOSFET TO-252 TO-251 Features • • • • • • 7.8A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description These N-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. Absolute Maximum Ratings Symbol VDSS ID D ! ● ◀ G! ▲ ● ● ! S TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current KSMD10N20C / KSMU10N20C 200 7.8 - Continuous (TC = 100°C) Units V A 5.0 A 31.2 A IDM Drain Current VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 210 mJ IAR Avalanche Current (Note 1) 7.8 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 5.0 5.5 50 0.4 -55 to +150 mJ V/ns W W/°C °C 300 °C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 2.5 Units °C/W RθJA Thermal Resistance, Junction-to-Ambient* -- 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) 2014-8-1 1 www.kersemi.com KSMD10N20C / KS,MU10N20C Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 200 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.28 VDS = 200 V, VGS = 0 V -- -- 10 µA VDS = 160 V, TC = 125°C -- -- 100 µA Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.29 0.36 Ω -- 5.6 -- S -- 395 510 pF -- 97 125 pF -- 40.5 53 pF IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.9 A gFS Forward Transconductance VDS = 40 V, ID = 3.9 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 100 V, ID = 9.5 A, RG = 25 Ω (Note 4, 5) VDS = 160 V, ID = 9.5 A, VGS = 10 V (Note 4, 5) -- 11 30 ns -- 92 190 ns -- 70 150 ns -- 72 160 ns -- 20 26 nC -- 3.1 -- nC -- 10.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 7.8 A ISM -- -- 31.2 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 7.8 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 9.5 A, dIF / dt = 100 A/µs (Note 4) -- 158 -- ns -- 0.97 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 5.2mH, IAS = 7.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 9.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 2014-8-1 2 www.kersemi.com KSMD10N20C / KS,MU10N20C Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 1 10 o 150 C ID, Drain Current [A] 1 10 0 10 o 25 C o -55 C 0 10 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test -1 -1 10 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1.5 IDR , Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 1 10 1.0 VGS = 10V VGS = 20V 0.5 ※ Note : TJ = 25℃ 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test -1 0.0 0 5 10 15 20 25 10 30 0.2 0.4 ID, Drain Current [A] 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 1200 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 0.6 VDS = 40V 10 Capacitances [pF] 800 VGS , Gate-Source Voltage [V] VDS = 100V Ciss Coss 600 Crss 400 ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 200 0 -1 10 6 4 2 ※ Note : ID = 9.5A 0 0 10 1 0 10 4 8 12 16 20 24 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics 2014-8-1 VDS = 160V 8 Figure 6. Gate Charge Characteristics 3 www.kersemi.com KSMD10N20C / KS,MU10N20C Typical Characteristics (Continued) 3.0 1.2 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 3.9 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 2 10 10 Operation in This Area is Limited by R DS(on) 8 ID, Drain Current [A] ID, Drain Current [A] 100 µs 1 10 1 ms 10 ms DC 0 10 ※ Notes : 6 4 o 1. TC = 25 C 2 o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 Figure 9. Maximum Safe Operating Area 100 125 150 Figure 10. Maximum Drain Current vs Case Temperature D = 0 .5 10 0 ※ N o te s : 1 . Z θJC(t) = 2 .5 ℃ /W M a x . 2 . D u t y F a c to r , D = t 1 / t 2 3 . T JM - T C = P DM * Z θJC(t) 0 .2 0 .1 0 .0 5 10 -1 0 .0 2 0 .0 1 PDM s in g le p u ls e θJ C Z (t), T h e rm a l R e s p o n s e 75 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] t1 t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve 2014-8-1 4 www.kersemi.com KSMD10N20C / KS,MU10N20C Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD tp 2014-8-1 VDS (t) VDD DUT 10V ID (t) tp 5 Time www.kersemi.com KSMD10N20C / KS,MU10N20C Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop 2014-8-1 6 www.kersemi.com KSMD10N20C / KS,MU10N20C Package Dimensions D-PAK MIN0.55 0.91 ±0.10 9.50 ±0.30 0.50 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (1.00) (3.05) (2XR0.25) (0.10) 2.70 ±0.20 6.10 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.90) 2.30 ±0.20 (0.70) 2.30TYP [2.30±0.20] (0.50) 2.30 ±0.10 0.89 ±0.10 MAX0.96 (4.34) 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 6.10 ±0.20 5.34 ±0.30 0.70 ±0.20 6.60 ±0.20 0.76 ±0.10 2014-8-1 7 www.kersemi.com KSMD10N20C / KS,MU10N20C Package Dimensions I-PAK 2.30 ±0.20 6.60 ±0.20 5.34 ±0.20 0.76 ±0.10 2.30TYP [2.30±0.20] 2014-8-1 0.50 ±0.10 16.10 ±0.30 6.10 ±0.20 0.70 ±0.20 (0.50) 9.30 ±0.30 MAX0.96 (4.34) 1.80 ±0.20 0.80 ±0.10 0.60 ±0.20 (0.50) 0.50 ±0.10 2.30TYP [2.30±0.20] 8 www.kersemi.com