N-Channel QFET® MOSFET 600 V, 1.9 A, 4.7 Ω Description Features These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well • 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A • Low Gate Charge (Typ. 8.5 nC) • Low Crss (Typ. 4.3 pF) • 100% Avalanche Tested • RoHS Compliant suited for high efficiency switch mode power supply. D D ! G G S D ● ◀ S G! I-PAK D-PAK ▲ ● ● ! S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current IDM Drain Current FQD2N60C / FQU2N60C Unit 600 V - Continuous (TC = 25°C) 1.9 A - Continuous (TC = 100°C) 1.14 A - Pulsed (Note 1) 7.6 A ± 30 V VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 120 mJ IAR Avalanche Current (Note 1) 1.9 A EAR Repetitive Avalanche Energy (Note 1) 4.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TA = 25°C)* 2.5 W Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 44 W 0.35 W/°C -55 to +150 °C 300 °C Thermal Characteristics Symbol FQD2N60C / FQU2N60C Parameter RθJC Thermal Resistance, Junction-to-Case, Max. RθJA RθJA Unit 2.87 °C/W Thermal Resistance, Junction-to-Ambient* 50 °C/W Thermal Resistance, Junction-to-Ambient, Max. 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) 1 www.kersemi.com FQD2N60C / FQU2N60C N-Channel QFET® MOSFET FQD2N60C / FQU2N60C Device Package Reel Size Tape Width FQD2N60C FQD2N60C D-PAK - - FDU2N60C FDU2N60C I-PAK - - Electrical Characteristics Symbol Quantity TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.6 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 µA VDS = 480 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.95 A -- 3.6 4.7 Ω gFS Forward Transconductance VDS = 40 V, ID = 0.95 A -- 5.0 -- S -- 180 235 pF (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 20 25 pF -- 4.3 5.6 pF -- 9 28 ns -- 25 60 ns -- 24 58 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 2 A, RG = 25 Ω (Note 4, 5) VDS = 480 V, ID = 2 A, VGS = 10 V (Note 4, 5) -- 28 66 ns -- 8.5 12 nC -- 1.3 -- nC -- 4.1 -- nC -- -- 1.9 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 7.6 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.9 A -- -- 1.4 V trr Reverse Recovery Time 230 -- ns Reverse Recovery Charge VGS = 0 V, IS = 2 A, dIF / dt = 100 A/µs -- Qrr -- 1.0 -- µC (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 56mH, IAS = 2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 2 www.kersemi.com FQD2N60C / FQU2N60C N-Channel QFET® MOSFET Device Marking Figure 2. Transfer Characteristics 1 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 0 10 ID, Drain Current [A] ID, Drain Current [A] Top : -1 10 o 150 C o -55 C 0 10 o 25 C ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test -1 -2 10 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 10 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 12 VGS = 10V 8 6 4 VGS = 20V 2 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test 25℃ ※ Note : TJ = 25℃ 0 -1 10 0 1 2 3 4 5 0.2 0.4 Figure 5. Capacitance Characteristics 500 VGS, Gate-Source Voltage [V] Capacitance [pF] Ciss 300 Coss 200 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 150 Crss 100 1.4 VDS = 300V 8 VDS = 480V 6 4 2 50 0 -1 10 1.2 VDS = 120V 10 250 1.0 12 400 350 0.8 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 450 0.6 VSD, Source-Drain voltage [V] ID, Drain Current [A] ※ Note : ID = 2A 0 10 0 1 10 0 2 4 6 8 10 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.kersemi.com FQD2N60C / FQU2N60C N-Channel QFET® MOSFET Figure 1. On-Region Characteristics Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 0.95 A 0.5 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 50 100 150 200 o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 2.0 Operation in This Area is Limited by R DS(on) 1 10 1.6 ID, Drain Current [A] ID, Drain Current [A] 100 µs 1 ms 0 10 10 ms 100 ms DC -1 10 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 10 1 2 10 0.8 0.4 -2 10 1.2 0.0 25 3 10 10 50 75 VDS, Drain-Source Voltage [V] Zθ JC(t), Thermal Response Figure 11. Typical Drain Current Slope vs. Gate Resistance 125 150 Figure 12. Typical Drain-Source Voltage Slope vs. Gate Resistance D = 0 .5 10 100 TC, Case Temperature [℃] ※ N o te s : 1 . Z θ J C ( t) = 2 .8 7 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 0 .2 0 .1 0 .0 5 10 PDM 0 .0 2 0 .0 1 -1 t1 s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] 4 www.kersemi.com FQD2N60C / FQU2N60C N-Channel QFET® MOSFET Figure 7. Breakdown Voltage Variation vs. Temperature FQD2N60C / FQU2N60C N-Channel QFET® MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD VDS (t) VDD DUT 10V ID (t) tp tp 5 Time www.kersemi.com FQD2N60C / FQU2N60C N-Channel QFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop 6 www.kersemi.com www.kersemi.com 7 FQD2N60C / FQU2N60C N-Channel QFET® MOSFET D-PAK www.kersemi.com 8 FQD2N60C / FQU2N60C N-Channel QFET® MOSFET I-PAK