SD101AWS THUR SD101CWS FEATURES SMALL SIGNAL CHOTTKY DIODES SMALL SIGNAL SCHOTTKY DIODES S E M I C O N D U C T O R SOD-323 For general purpose applications The SD10AW to SD101CW series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, (1.7+0.1 ( biasing, and coupling diodes for fast switching and low logic level JF applications These diodes are also available in the Mini-MELF case with type designation LL101A to LL101C ,in the DO-35 case with type designation SD101A to SD101C and in the SOD-123 case with type designation SD101AW to SW101CW MECHANICAL DATA Case: SOD-323 plastic case Weight: Approx. 0.0040 gram Dimensions in inches and (millimeters) ABSOLUTE RATINGS(LIMITING VALUES) Value Symbols Peak Reverse Voltage VRRM VRRM VRRM Ptot IFSM TJ TSTG SD101AWS SD101BWS SD101CWS Power Dissipation (infinite Heat Sink) Maximum Single cycle surge 10ms square wave Junction temperature Storage Temperature Range Units 60 50 40 V V mW A 400 1) 2.0 125 C -55 to+150 C 1) Valid provided that electrodes are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified) Symbols Reverse breakdown voltage at IR=10mA Leakage current at VR=50V VR=40V VR=30V Forward voltage drop at IF=1mA IF=15mA Junction Capacitance at VR=0V ,f=1MHz SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS VR VR VR IR IR IR SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS VF VF VF VF VF VF SD101AWS SD101BWS SD101CWS CJ CJ CJ Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR Thermal resistance,junction to Ambient Min. Typ. Max. Unis V V V 60 50 40 trr 200 200 200 0.41 0.4 0.39 1 0.95 0.9 2.0 2.1 2.2 1 RqJA 650 1) nA nA nA V V V V V V pF pF pF ns C /W 1) Valid provided that electrodes are kept at ambient temperature 2-111 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM