RENESAS 2SJ386

2SJ386
Silicon P Channel MOS FET
REJ03G0861-0200
(Previous: ADE-208-1195)
Rev.2.00
Sep 07, 2005
Description
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for Switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
D
1. Source
2. Drain
3. Gate
G
32
Rev.2.00 Sep 07, 2005 page 1 of 5
1
S
2SJ386
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Symbol
VDSS
Value
–30
Unit
V
VGSS
ID
±20
–3
V
A
–5
–3
A
A
ID (pulse)
IDR
Note 1
Channel dissipation
Channel temperature
Pch
Tch
0.9
150
W
°C
Storage temperature
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
V (BR) DSS
V (BR) GSS
–30
±20
—
—
—
—
V
V
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
IGSS
IDSS
—
—
—
—
±10
–10
µA
µA
VGS = ±16 V, VDS = 0
VDS = –24 V, VGS = 0
Gate to source cutoff voltage
Static drain to source on state resistance
VGS (off)
RDS (on)
–1.0
—
—
0.3
–2.5
0.4
V
Ω
ID = –1 mA, VDS = –10 V
Note 2
ID = –2 A, VGS = –10 V
Forward transfer admittance
RDS (on)
|yfs|
—
1.0
0.55
1.7
0.8
—
Ω
S
ID = –2 A, VGS = –4 V
Note 2
ID = –1 A, VDS = –10 V
Input capacitance
Output capacitance
Ciss
Coss
—
—
177
120
—
—
pF
pF
Reverse transfer capacitance
Turn-on delay time
Crss
td (on)
—
—
59
8
—
—
pF
ns
VDS = –10 V
VGS = 0
f = 1 MHz
Rise time
Turn-off delay time
tr
td (off)
—
—
28
45
—
—
ns
ns
tf
—
60
—
ns
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Fall time
Note:
2. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 5
Test Conditions
Note 2
ID = –2 A
VGS = –10 V
RL = 15 Ω
2SJ386
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
–10
ID (A)
Drain Current
Channel Dissipation
0.4
0
0
50
100
150
Ambient Temperature
O
pe
ra
tio
n
Operation in
this area is
limited by RDS (on)
–0.1
–0.03
Ta (°C)
Ta = 25°C
1 shot pulse
–1.6
–30
–100
VDS (V)
VDS = –10 V
Pulse Test
Ta = 25°C
Pulse Test
–4
25°C
Tc = –25°C
–3
Drain Current
–2.5 V
–0.8
–0.4
VGS = –2 V
0
–2
–4
–6
–8
–5
Ta = 25°C
Pulse Test
–4
–3
–2
ID = –5 A
–3 A
–1 A
0
0
–4
–8
–12
Gate to Source Voltage
Rev.2.00 Sep 07, 2005 page 3 of 5
–1
–16
–20
VGS (V)
0
–1
–2
–3
–4
Gate to Source Voltage
VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1
75°C
–2
0
–10
–5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (Ω)
Drain Current
–10
–5
–3 V
Drain to Source Voltage
Drain to Source Saturation Voltage VDS (on) (V)
–3
Typical Transfer Characteristics
–1.2
0
–1
Drain to Source Voltage
ID (A)
ID (A)
–5 V
–4 V
–3.5 V
m
s
DC
–0.3
Typical Output Characteristics
–2.0
10
–1
–0.01
–0.1 –0.3
200
=
s
0.8
–3
m
1.2
100 µs
PW
1
Pch (W)
1.6
10
Pulse Test
5
2
1
VGS = –4 V
0.5
–10 V
0.2
0.1
–0.1 –0.2
–0.5
–1
Drain Current
–2
–5
ID (A)
–10
2SJ386
1.0
ID = –3 A
0.8
–1 A
0.6
ID = –5 A
0.4
–3 A
0.2
–1 A
–10 V
0
–40
0
40
80
120
Ambient Temperature
160
VDS = –10 V
Pulse Test
5
Tc = –25°C
2
25°C
1
75°C
0.5
0.2
0.1
–0.1 –0.2
Ta (°C)
VDS (V)
Coss
50
Crss
20
10
Drain to Source Voltage
Capacitance C (pF)
500
100
VGS = 0
f = 1 MHz
0
–10
–20
–30
–40
–50
0
–4
–20
–8
VDS
–30
–12
VDD = –30 V
–20 V
–10 V
VGS
–40
–50
0
4
8
Gate Charge
12
16
–16
–20
20
Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
200
–5
Reverse Drain Current IDR (A)
Switching Time t (ns)
0
VDD = –10 V
–20 V
–30 V
–10
Switching Characteristics
50
–10
–5
ID = –3 A
Drain to Source Voltage VDS (V)
100
–2
Dynamic Input Characteristics
1000
Ciss
–1
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
200
–0.5
tf
td(off)
20
tr
td(on)
10
5
VGS = –10 V, VDD = –30 V
PW = 2 µs, duty ≤ 1 %
2
–0.05 –0.1 –0.2
–0.5
Drain Current
Rev.2.00 Sep 07, 2005 page 4 of 5
–1
–2
ID (A)
Pulse Test
–4
–10 V
–3
–5 V
–2
VGS = 0
–1
0
–5
–1.2
–1.6
Source to Drain Voltage
VSD
0
–0.4
–0.8
–2.0
(V)
VGS (V)
VGS = –4 V
10
Gate to Source Voltage
Pulse Test
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
vs. Temperature
2SJ386
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
SC-51
PRSS0003DC-A
TO-92 Mod / TO-92 ModV
0.35g
4.8 ± 0.4
Unit: mm
2.3 Max
0.65 ± 0.1
0.75 Max
0.7
0.60 Max
0.55 Max
10.1 Min
8.0 ± 0.5
3.8 ± 0.4
0.5 Max
1.27
2.54
Ordering Information
Part Name
Quantity
Shipping Container
2SJ386TZ-E
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 5 of 5
Sales Strategic Planning Div.
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