JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJW1012 N-Channel Power MOSFET SOT-323 GENERRAL DESCRIPTION This Single N-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON). FEATURE z High-Side Switching z Low On-Resistance z Low Threshold z Fast Switching Speed z ESD protected up to 2kV 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories z Battery Operated Systems z Power Supply Converter Circuits z Load/Power Switching Cell Phones, Pagers MARKING: C Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source voltage VDSS 20 Gate-Source Voltage VGS ±12 Drain Current-Continuous ID(DC) 500 IDM(pulse) 1000 Unit V mA Drain Current -Pulsed(note1) 150 Power Dissipation (note 2 , Ta=25℃) mW PD 275 Maximum Power Dissipation (note 3 , Tc=25℃) Thermal Resistance from Junction to Ambient RθJA 833 Thermal Resistance from Junction to Case RθJC 455 Storage Temperature Tj 150 Junction Temperature Tstg -55 ~+150 ℃/W ℃ B,Apr,2012 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit On/Off States Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =250µA 20 VGS(th) VDS =VGS, ID =250µA 0.45 Gate-Body Leakage Current IGSS VDS =0V, VGS =±4.5V ±1 µA Zero Gate Voltage Drain Current IDSS VDS =16V, VGS =0V 100 nA VGS =4.5V, ID =600mA 700 VGS =2.5V, ID =500mA 850 Gate-Threshold Voltage Drain-Source On-State Resistance RDS(on) Forward Transconductance gFS VDS =10V, ID =400mA 1.2 1 V mΩ S Dynamic Characteristics Input Capacitance (note 4) Ciss Output Capacitance (note 4) Coss Reverse Transfer Capacitance (note 4) Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 100 VDS =16V,VGS =0V,f =1MHz pF 16 12 VDS =10V,VGS =4.5V, ID =250mA 750 nC 75 225 Switching Times (note 4) Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf VDD=10V, RL=47Ω, ID=200mA, VGS=4.5V,RG=10Ω 5 5 nS 25 11 Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage (note 5) VSD IS=0.15A, VGS = 0V 1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. This test is performed with no heat sink at Ta=25℃. 3. This test is performed with infinite heat sink at Tc=25℃. 4.These parameters have no way to verify. 5. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%. B,Apr,2012 Typical Characteristics Output Characteristics 5 Transfer Characteristics 500 Ta=25℃ 5.5V VDS=16V Pulsed Pulsed 4.5V 4 400 ID (mA) 3.5V (A) 3 DRAIN CURRENT ID DRAIN CURRENT CJW1012 2.5V 2 1 300 Ta=100℃ 200 Ta=25℃ 100 VGS=1.5V 0 0.0 0.5 1.0 1.5 2.0 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 600 2.5 VDS 0 0.0 3.0 (V) 0.5 1.0 1.5 2.0 GATE TO SOURCE VOLTAGE ID RDS(ON) 500 —— 2.5 VGS 3.0 (V) VGS Ta=25℃ Ta=25℃ Pulsed Pulsed 300 RDS(ON) RDS(ON) 400 ON-RESISTANCE (mΩ) (mΩ) 500 ON-RESISTANCE VGS=2.5V VGS=4.5V 200 400 ID=600mA 300 100 0 100 200 200 400 600 DRAIN CURRENT ID 1 800 IS —— VSD 500 2 3 4 GATE TO SOURCE VOLTAGE (mA) VGS 5 (V) Threshold Voltage 0.90 Ta=25℃ Pulsed 0.85 VTH THRESHOLD VOLTAGE SOURCE CURRENT IS (mA) (V) 100 10 1 0.1 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE 1.0 VSD (V) 1.2 0.80 ID=250uA 0.75 0.70 0.65 25 50 75 JUNCTION TEMPERATURE 100 TJ 125 (℃ ) B,Apr,2012