SSFD3004 30V N-Channel MOSFET D DESCRIPTION The SSFD3004 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic Diagram GENERAL FEATURES ● VDS = 30V,ID =55A RDS(ON) < 9.5mΩ @ VGS=4.5V RDS(ON) < 5.5mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management TO-252E-2-M Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSFD3004 SSFD3004 TO-252E-2-M - - - ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V ID(25℃) 55 A ID(70℃) 46 A IDM 100 A Avalanche Current@L=0.3mH IAR 60 A Single Pulse Avalanche Energy(NOTE 5) EAS 500 mJ PD 50 W TJ,TSTG -55 To 150 ℃ R θJA 41 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) www.goodark.com Page 1 of 6 Rev.2.0 SSFD3004 30V N-Channel MOSFET ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 30 V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) V DS=VGS,ID=250μA 1.8 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=20A 7.5 9.5 mΩ VGS=10V, ID=30A 4.4 5.5 mΩ ON CHARACTERISTICS (Note 3) Forward Transconductance g FS VDS=5V,ID=30A 1 25 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss V DS=15V,VGS=0V, F=1.0MHz 1800 PF 450 PF Output Capacitance C oss Reverse Transfer Capacitance C rss 300 PF Turn-on Delay Time td(on) 8 nS Turn-on Rise Time tr 10 nS 30 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time td(off) VDS=15V,VGS=10V,RGEN=3Ω ID=1A Turn-Off Fall Time tf 9 nS Total Gate Charge Qg 30 nC Gate-Source Charge Qgs 5 nC Gate-Drain Charge Qgd 9 nC VDS=15V,ID=10A,V GS=10V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD VGS=0V,IS=1A 0.7 1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. 5. Limited by TJmax, starting TJ = 25°C, L = 0.3mH RG =50Ω, IAS = 50A, VGS =10V. Part not recommended for use above this value www.goodark.com Page 2 of 6 Rev.2.0 SSFD3004 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS td(on) Vdd Vgs Rgen D toff tf td(off) 90% Rl Vin ton tr Vout VOUT 90% INVERTED 10% 10% G 90% VIN S 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 3 Power Dissipation ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 4 Drain Current ID- Drain Current (A) Vds Drain-Source Voltage (V) www.goodark.com Page 3 of 6 Rev.2.0 SSFD3004 30V N-Channel MOSFET Figure 6 Drain-Source On-Resistance ID- Drain Current (A) Normalized On-Resistance Figure 5 Output CHARACTERISTICS Vgs Gate-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds www.goodark.com Is- Reverse Drain Current (A) Vds Drain-Source Voltage (V) Vgs Gate-Source Voltage (V) Vgs Gate-Source Voltage (V) Page 4 of 6 Rev.2.0 SSFD3004 30V N-Channel MOSFET Vsd Source-Drain Voltage (V) Qg Gate Charge (nC) Figure 12 Source- Drain Diode Forward ID- Drain Current (A) Figure 11 Gate Charge Vds Drain-Source Voltage (V) Safe Operation Area r(t),Normalized Effective Transient Thermal Impedance Figure 13 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance www.goodark.com Page 5 of 6 Rev.2.0 SSFD3004 30V N-Channel MOSFET TO-252E-2-M PACKAGE INFORMATION Dimensions in Millimeters UNIT: mm NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 6 of 6 Rev.2.0