SSF3341L

SSF3341L
30V P-Channel MOSFET
D
DESCRIPTION
The SSF3341L uses advanced trench technology to
provide excellent R DS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a load switch or in PWM applications.
G
S
GENERAL FEATURES
Schematic Diagram
● V DS = -30V,ID = -4.2A
R DS(ON) < 120mΩ @ V GS=-2.5V
R DS(ON) < 65mΩ @ VGS=-4.5V
R DS(ON) < 50mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
Marking and Pin Assignment
APPLICATIONS
●PWM applications
●Load switch
●Power management
SOT-23-3 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
3341L
SSF3341L
SOT-23-3
Tape Width
Quantity
8 mm
3000 units
Ø180mm
ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V DS
-30
V
Gate-Source Voltage
V GS
±12
V
ID（25℃）
-4.2
A
ID（70℃）
-3.5
A
IDM
-30
A
PD
1
W
TJ,TSTG
-55 To 150
℃
R θJA
90
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV DSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS
V DS=-24V,VGS=0V
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±12V,VDS=0V
±100
nA
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Page 1 of 6
-30
V
Rev.2.0
SSF3341L
30V P-Channel MOSFET
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VGS(th)
VDS=VGS,ID=-250μA
RDS(ON)
g FS
-0.7
-2
V
VGS=-10V, ID=-4.2A
42
50
VGS=-4.5V, ID=-4A
53
65
VGS=-2.5V, ID=-1A
80
120
VDS=-5V,ID=-5A
10
S
950
PF
120
PF
mΩ
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
C lss
V DS=-15V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
C rss
70
PF
Turn-on Delay Time
td(on)
6.5
nS
Turn-on Rise Time
tr
3
nS
30
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
V DD=-15V,ID=-3.2A
VGS=-10V,RGEN=6Ω
td(off)
Turn-Off Fall Time
tf
12
nS
Total Gate Charge
Qg
9.6
nC
Gate-Source Charge
Q gs
2
nC
Gate-Drain Charge
Q gd
2.6
nC
V DS=-15V,ID=-4A,VGS=-4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
V SD
VGS=0V,IS=-1A
-1.2
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 2 of 6
Rev.2.0
V
SSF3341L
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
td(on)
toff
tf
td(off)
90%
VOUT
90%
INVERTED
10%
10%
90%
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
PD Power(W)
-ID- Drain Current (A）
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
-ID- Drain Current (A)
Rdson On-Resistance(mΩ)
Figure 4 Drain Current
-ID- Drain Current (A)
-Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
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Figure 6 Drain-Source On-Resistance
Page 3 of 6
Rev.2.0
SSF3341L
-ID- Drain Current (A)
Normalized On-Resistance
30V P-Channel MOSFET
-Vgs Gate-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(mΩ)
Figure 7 Transfer Characteristics
-Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
-Is- Reverse Drain Current (A)
-Vgs Gate-Source Voltage (V)
-Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 11 Gate Charge
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-Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
Page 4 of 6
Rev.2.0
SSF3341L
-ID- Drain Current (A)
30V P-Channel MOSFET
-Vds Drain-Source Voltage (V)
Safe Operation Area
Z thJA Normalized Transient
Thermal Resistance
Figure 13
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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Page 5 of 6
Rev.2.0
SSF3341L
30V P-Channel MOSFET
SOT23-3 PACKAGE INFORMATION
NOTES：
1. Tolerance ±0.10mm (4 mil) unless otherwise specified
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 6 of 6
Rev.2.0