9c006d9157787c74a31509775864173e

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate MOSFETS
CJ7252KDW
N Channel + P Channel Power MOSFET
V(BR)DSS
60 V
RDS(on)MAX
ID
SOT-363
[email protected] [email protected] 0.34A
8Ω@-10V -50 V
10Ω@-5V -0.18A
DESCRIPTION
This N Channel + P Channel MOSFET has been designed using
advanced power trench process to optimize the RDS(ON).
FEATURE
z High-Side Switching
z Low Threshold
z Fast Switching Speed
APPLICATION
z Drivers:Relays, Solenoids, Memories
z Battery Operated Systems
z Power Supply Converter Circuits
z Load/Power Switching Cell Phones, Pagers
MARKING: 75
Equivalent Circuit
D1
6
G2
5
S2
4
1
2
3
S1
G1
D2
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
N-Channel MOSFET
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
Drain Current -Continuous
0.34
A
Drain Current - Pulsed(Note1)
1.36
A
ID
IDM
P- Channel MOSFET
VDS
Drain-Source Voltage
-50
V
VGS
Gate-Source Voltage
±20
V
-0.18
A
-0.7
A
Power Dissipation
0.15
W
Thermal Resistance from Junction to Ambient (Note2)
833
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
260
℃
ID
IDM
Drain Current -Continuous
Drain Current – Pulsed (Note1)
Power Dissipation, Temperature and Thermal Resistance
PD
RθJA
TL
Lead Temperature
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1
A-5,Mar,2016
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
N- Channel MOSFET
Drain-source breakdown voltage
V (BR)DSS
VGS =0V, ID=250µA
Zero gate voltage drain current
IDSS
VDS =48V,VGS = 0V
Gate-body leakage current
IGSS
Gate threshold voltage (note 3)
VGS(th)
Drain-source on-resistance (note 3)
RDS(on)
Diode forward voltage
VSD
60
V
1
µA
VGS =±20V, VDS = 0V
±10
µA
VGS =±10V, VDS = 0V
±200
nA
VGS =±5V, VDS = 0V
±100
nA
1.3
2.5
VGS =4.5V, ID =0.2A
1.1
5.3
Ω
VGS =10V, ID =0.5A
0.9
VDS =VGS, ID =1mA
1
IS=0.3A, VGS = 0V
V
5
Ω
1.5
V
40
pF
30
pF
10
pF
DYNAMIC PARAMETERS (note 4)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS =10V,VGS =0V,f =1MHz
SWITCHING PARAMETERS (note 4)
Turn-on delay time
Turn-off delay time
Reverse recovery time
td(on)
VGS=10V,VDD=50V,
10
ns
td(off)
RL=250Ω,RGEN=50Ω,
15
ns
trr
Qr
Recovered charge
IS=300mA;
dIS/dt=-100A/s;VGS=0V;
VR=25V
30
ns
30
nC
P- Channel MOSFET
Drain-source breakdown voltage
V (BR)DSS
VGS = 0V, ID =-250µA
-50
V
VDS =-50V,VGS = 0V
-15
µA
VDS =-25V,VGS = 0V
-0.1
µA
IGSS
VGS =±20V, VDS = 0V
±10
nA
Gate threshold voltage (note 3)
VGS(th)
VDS =VGS, ID =-250µA
-1.62
-2
V
Drain-source on-resistance (note 3)
RDS(on)
VGS =-5V, ID =-0.1A
5.5
10
Ω
VGS =-10V, ID =-0.1A
4.1
8
Ω
Forward transconductance (note 3)
gFS
Zero gate voltage drain current
IDSS
Gate-body leakage current
VDS =-25V, ID =-0.1A
-0.9
0.05
S
DYNAMIC CHARACTERISTICS (note 4)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
30
VDS =-5V,VGS =0V,f =1MHz
Crss
pF
10
pF
5
pF
2.5
ns
1
ns
16
ns
8
ns
SWITCHING CHARACTERISTICS (note 4)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
td(on)
tr
td(off)
VDD=-15V,
RL=50Ω, ID =-2.5A
tf
SOURCE−DRAIN DIODE CHARACTERISTICS(note 4)
IS
-0.18
A
Pulsed Current
ISM
-0.7
A
Diode forward voltage (note 3)
VDS
-2.2
V
Continuous Current
IS=-0.13A, VGS = 0V
Note: 1、 Surface mounted on FR-4 board using minimum pad size, 1oz copper
2、 Repetitive Rating: Pulse width limited by maximum junction temperature.
3 、 Pulse test: pulse width ≤ 300 μ s, duty cycle ≤ 2%
4、 These parameters have no way to verify.
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2
A-5,Mar,2016
Typical Characteristics
N-Channel MOS
Output Characteristics
Transfer Characteristics
1.2
1.2
Ta=25℃
VDS=3V
VGS=5V,6V,7V,10V
Pulsed
Pulsed
(A)
(A)
VGS=4V
DRAIN CURRENT
DRAIN CURRENT
ID
ID
0.8
VGS=3V
0.4
0.0
0.8
Ta=100℃
Ta=25℃
0.4
0.0
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
VDS
5
0
(V)
2
4
6
GATE TO SOURCE VOLTAGE
VGS
8
(V)
RDS(ON) —— VGS
RDS(ON) —— ID
10
5
Ta=25℃
Ta=25℃
Pulsed
Pulsed
8
( )
RDS(ON)
3
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
( )
4
2
VGS=4.5V
ID=500mA
6
4
2
1
VGS=10V
0
0
0
300
600
900
DRAIN CURRENT
ID
1200
1500
0
(mA)
2
4
8
VGS
10
(V)
Threshold Voltage
IS —— VSD
2
1
6
GATE TO SOURCE VOLTAGE
1.8
Pulsed
VTH
0.1
Ta=100℃
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
(V)
1.6
Ta=25℃
0.01
1.4
ID=250uA
1.2
1.0
0.8
0.6
1E-3
0.0
0.2
0.4
0.6
0.8
1.0
SOURCE TO DRAIN VOLTAGE
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1.2
1.4
0.4
25
1.6
VSD (V)
50
75
JUNCTION TEMPERATURE
3
100
Tj
125
( ℃)
A-5,Mar,2016
Typical Characteristics
P-Channel MOS
Output Characteristics
Transfer Characteristics
-0.6
-0.7
VDS=-10V
VGS=-10V
-0.6
VGS=-6V
(A)
-0.5
ID
-0.4
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
-0.5
VGS=-4.5V
-0.3
VGS=-4V
-0.2
VGS=-3V
Ta=25℃
-0.4
Ta=100℃
-0.3
-0.2
-0.1
-0.1
VGS=-2.5V
-0.0
-0.0
-0
-1
-2
-3
-4
-5
-6
-7
DRAIN TO SOURCE VOLTAGE
-8
VDS
-9
-10
-0
-1
(V)
-2
-3
-7
VGS
-8
-9
(V)
18
Pulsed
16
( )
8
14
VGS=-5V
7
RDS(ON)
( )
-6
20
Ta=25℃
RDS(ON)
-5
RDS(ON) —— VGS
RDS(ON) —— ID
10
9
-4
GATE TO SOURCE VOLTAGE
ID=-0.1A
12
ON-RESISTANCE
ON-RESISTANCE
6
5
4
VGS=-10V
3
10
Ta=100℃
8
6
4
Ta=25℃
2
1
-50
2
0
-100
-150
-200
-250
DRAIN CURRENT
-300
ID
-350
-400
-0
(mA)
-1
-2
-3
-4
-5
-6
-7
GATE TO SOURCE VOLTAGE
VGS
-8
-9
-10
(V)
Threshold Voltage
IS —— VSD
-1
-2.2
VTH
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
(V)
-2.0
-0.1
Ta=100℃
Ta=25℃
-1.8
ID=-250uA
-1.6
-1.4
-1.2
-1.0
-0.01
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
SOURCE TO DRAIN VOLTAGE
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-1.2
-1.4
-0.8
25
-1.6
VSD (V)
50
75
JUNCTION TEMPERATURE
4
100
TJ
125
(℃ )
A-5,Mar,2016
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Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
Dimensions In Millimeters
Min
Max
0.900
1.100
0.000
0.100
0.900
1.000
0.150
0.350
0.
0.150
2.000
2.200
1.150
1.350
2.150
2.4
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Dimensions In Inches
Min
Max
0.035
0.043
0.000
0.004
0.035
0.039
0.006
0.014
0.00
0.006
0.079
0.087
0.045
0.053
0.085
0.09
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
627 6XJJHVWHG3DG/D\RXW
ZZZFMHOHFFRP5A-5,Mar,2016
6277DSHDQG5HHO
SOT-363 Tape and reel
SOT-363 Embossed Carrier Tape
P0
C
d
P1
Packaging Description:
SOT-363 parts are shipped in tape. The carrier
tape is made from a dissipative (carbon filled)
polycarbonate resin. The cover tape is a multilayer
film (Heat Activated Adhesive in nature) primarily
composed of polyester film, adhesive layer, sealant,
and anti-static sprayed agent. These reeled parts in
standard option are shipped with 3,000 units per 7"
or 17.8cm diameter reel. The reels are clear in color
and is made of polystyrene plastic (anti-static
coated).
B
F
W
E
A
P
A
A
A-A
Dimensions are in millimeter
Pkg type
A
B
C
d
E
F
P0
P
P1
W
SOT-363
2.25
2.55
1.20
Ø1.50
1.75
3.50
4.00
4.00
2.00
8.00
SOT-363 Tape Leader and Trailer
Leader Tape
Trailer Tape
50±2 Empty Pockets
100±2 Empty Pockets
Components
SOT-363 Reel
D
I
G
W2
3000
H
2500
2000
1500
1000
D2
D1
500
W1
Dimensions are in millimeter
Reel Option
D
D1
D2
G
H
I
W1
W2
7''Dia
Ø178.00
54.40
13.00
R78.00
R25.60
R6.50
9.50
12.30
G.W.(kg)
REEL
Reel Size
Box
Box Size(mm)
Carton
Carton Size(mm)
3000 pcs
7 inch
30,000 pcs
203×203×195
120,000 pcs
438×438×220
ZZZFMHOHFFRP6A-5,Mar,2016