JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes DAN202 SOT-23 SWITCHING DIODE FEATURES High Speed High Reliability Suitable for High Packing Density Layout APPLICATIONS High Speed Switching MARKING: N MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VR DC Blocking Voltage 80 V IO Continuous Forward Current 100 mA 300 mA 4 A IFM Peak Forward Current ISM Surge Current PD Power Dissipation 250 mW Thermal Resistance from Junction to Ambient 500 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse voltage Symbol V(BR) Test conditions IR=100μA Min Typ Max 80 Unit V Reverse current IR VR=70V 0.1 μA Forward voltage VF IF=100mA 1.2 V Total capacitance Ctot VR=6V,f=1MHz 3.5 pF 4 ns Reverse recovery time trr IF= IR=5mA, VR=6V A,Jun,2011 Typical Characteristics Forward 100 Characteristics Characteristics 300 (nA) (mA) Ta =2 5℃ 3 REVERSE CURRENT IR 10 Ta =1 00 ℃ IF Reverse 1000 30 FORWARD CURRENT DAN202 1 Ta=100℃ 100 30 Ta=25℃ 10 3 0.3 0.1 0.0 1 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 VF 1.0 1.2 0 40 REVERSE VOLTAGE Capacitance Characteristics 1.6 20 (V) 60 VR 80 (V) Power Derating Curve 300 Ta=25℃ f=1MHz (mW) PD 1.4 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 250 1.2 200 150 100 50 1.0 0 0 5 10 REVERSE VOLTAGE 15 VR (V) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃) A,Jun,2011