JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SA1625 TRANSISTOR (PNP) 1. EMITTER FEATURES z High Voltage z High Speed Switching z Low Collector Saturation Voltage 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V -7 V IC Collector Current Emitter-Base Voltage -500 mA PC Collector Power Dissipation 750 mW Thermal Resistance From Junction To Ambient 166 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ VEBO RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -0.1mA,IE=0 -400 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -400 V Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA,IC=0 -7 V Collector cut-off current ICBO VCB=-400V,IE=0 -10 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -10 μA DC current gain hFE VCE=-5V, IC=-50mA 40 200 Collector-emitter saturation voltage VCE(sat) IC=-100mA,IB=-10mA -0.5 V Base-emitter saturation voltage VBE (sat) IC=-100mA,IB=-10mA -1.2 V 20 pF Cob Collector output capacitance fT Transition frequency VCB=-10V,IE=0, f=1MHz VCE=-10V,IC=-10mA 20 MHz CLASSIFICATION OF hFE RANK M L K RANGE 40-80 60-120 100-200 A,Dec,2010