JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR (NPN) SOT-23 FEATURES z AM/FM Amplifier, Local Oscillator of FM/VHF Tuner z High Current Gain Bandwidth Product 1. BASE 2. EMITTER 3. COLLECTOR MARKING：J8 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 200 mW 5ș-$ Thermal Resistance from Junction to Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 15 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=12V, IE=0 0.05 μA Collector cut-off current ICEO VCE=12V, IB=0 0.1 μA Emitter cut-off current IEBO VEB= 3V, IC=0 0.1 μA DC current gain hFE(1) VCE=5V, IC= 1mA 70 190 Collector-emitter saturation voltage VCE(sat) IC=10mA, IB= 1mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=10mA, IB= 1mA 1.4 V Transition frequency fT VCE=5V, IC= 5mA 800 f=400MHz MHz CLASSIFICATION OF hFE Rank Range L H 70-105 105-190 A,May,2011