791 KB, EN

NjbW
IPD50R520CP
CoolMOSTM Power Transistor
Product Summary
Package
V *EL;HI<?=JG; E<C ;G?I0 IH M / Y
V3 B
IG
7 BEL =7I; 9
>7G=;
V"1 9N\_Si
//*
P
R>M#a`$&_Si
*(/,*
"
+-
`=
QY&ejb
V # MIG;C ; : K: IG7I;:
V & ?=> F;7A9
JGG;DI9
7F78?B
?IN
V . 8<G;; B;7: FB7I?D= 0 E& 1 9
EC FB?7DI; available in Halogen free mold compounda)
V / J7B
!<?;: 79
9
EG
: ?D= IE ( # "# !+$
JA'NI,/,
CoolMOS CP is designed for:
V & 7G: 1 E<IHL?I9
>?D= 1 + . 1 IEFEB
E=?;H
V "!+ . $ ! <EG *7C F 87BB
7HI
V . 5 + <EG *7C F 7BB
7HI
. ". 7D: *!" 24
Type
Package
Marking
CJ>/*L/,*=J
JA'NI,/,
/L/,*J
Maximum ratings, 7IT \ Y!
JDB;HH EI>;G
L?H; HF;9
?<?;:
Parameter
Symbol Conditions
!EDI?DJEJH : G7?D 9
JGG
;DI
I>
Value
T = Y!
1&+
T = Y!
.&/
,$
. JB
H;: : G7?D 9
JGG
;DI
I >&bf^dW
T = Y!
+/
K7B
7D9
>; ;D;G=N
H?D=B
; FJB
H;
E ;M
I > V >> 4
+00
K7B
7D9
>; ;D;G=N
G;F;I?I?K;t ;L,$&-$
E ;L
I > V >> 4
*&,/
K7B
7D9
>; 9
JGG;DI
G;F;I?I?K; t ;L,$&-$
I ;L
+ - 1 $ # 2 : v )Vt GJ==;: D;HH
: v )Vt
% 7I; HEJG
9
; KEB
I7=;
V AM
. EL;G: ?HH?F7I?ED
P eae
- F;G7I?D= 7D: HIEG
7=; I;C F;G
7IJG
;
T \
T deY
a)
Unit
;
_D
,&/
;
V >M 4
/*
P)`d
deSe[U
v,*
P
! f & O
v-*
T = Y!
00
Q
u=
non-Halogen free (OPN: IPD50R520CPBT); Halogen free (OPN: IPD50R520CPAT)
0 ;K 2.1
F7=; 2013-07-31
IPD50R520CP
Maximum ratings, 7IT \ Y!
JDB;HH EI>;G
L?H; HF;9
?<?;:
Parameter
Symbol Conditions
!EDI?DJEJH : ?E: ; <EGL7G: 9
JGG;DI
IM
Value
Unit
-&2
;
T = Y!
"?E: ; FJBH; 9
JGG
;DI,$
I M&bf^dW
+/
0 ;K;G
H; : ?E: ; : v )Vt .$
Vv )Vt
+/
P)`d
Parameter
Symbol Conditions
Values
Unit
min.
typ.
max.
'
'
+&3
^WSVWV
'
'
0,
C C ?D
<GEC 9
7H; <EG H
'
'
,0*
u=
/**
'
'
P
Thermal characteristics
2>;GC 7BG;H?HI7D9
;
@JD9
I?ED 9
7H;
R eZD=
2>;GC 7BG;H?HI7D9
;
@JD9
I?ED S_T[W`e
R eZD;
1 EB: ;G?D= I;C F;G7IJG;
T da^V
L7K;HEB: ;G?D= EDB
N 7B
BEL;: 7IB;7: H
E)Q
Electrical characteristics, 7IT \ Y!
JDB;HH EI>;GL?H; HF;9
?<?;:
Static characteristics
> 7?
"G
[DHEJG
9
;T
8G;7A
]V
: ELD KEB
^eI7=;
V #<L$>MM V AM7*
*P
P
I >7,/*
,/* w;
[;
% 7I; I>G;H>EB
: KEBI7=;
V AM#eZ$
V >M7V AM
I > C ,&/
-
-&/
6;G
E =7I; KEB
I7=; : G7?D 9
JGG
;DI
I >MM
V >M 4 V AM 4 T \ Y!
'
'
+
V >M 4 V AM 4 T \ Y!
'
+*
'
w;
% 7I;HEJG9
;B
;7A7=; 9
JGG
;DI
I AMM
V AM 4 V >M 4
'
'
+**
`;
"G7?DHEJG
9
; EDHI7I; G;H?HI7D9
;
R >M#a`$
V AM 4 I > T \ Y!
'
*&.1
*&/,
"
V AM 4 I > T \ Y!
'
+&,
'
f + & O
EF;D : G7?D
'
,&,
'
% 7I; G;H?HI7D9
;
0 ;K 2.1
RA
F7=; "
2013-07-31
IPD50R520CP
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
'
02*
'
'
-+
'
'
,3
'
Dynamic characteristics
'DFJI9
7F79
?I7D9
;
C [dd
- JIFJI9
7F79
?I7D9
;
C add
# <<;9
I?K; EJIFJI9
7F79
?I7D9
;
;D;G
=N
C a#Wc$
0$
cW^SeWV
V AM 4 V >M 4 f + & O
[email protected]
V AM 4 V >M 4
IE 4
# <<;9
I?K; EJIFJI9
7F79
?I7D9
;
I?C ;
1$
cW^SeWV
C a#ec$
'
0-
'
2JG
DED : ;B
7N I?C ;
t V#a`$
'
-/
'
0 ?H; I?C ;
tc
'
+.
'
2JG
DE<<: ;B
7N I?C ;
t V#aXX$
'
2*
'
$ 7B
BI?C ;
tX
'
+1
'
% 7I; IE HEJG9
;9
>7G=;
Q Yd
'
-
'
% 7I; IE : G7?D 9
>7G
=;
Q YV
'
/
'
% 7I; 9
>7G
=; IEI7B
QY
'
+-
+1
% 7I; FB7I;7J KEB
I7=;
V b^SeWSf
'
/&,
'
P
'
*&3
+&,
P
'
,.*
'
`d
'
+&0
'
w=
'
+-
'
;
V >> 4 V AM 4 I > R A "
`d
% 7I; !>7G=; !>7G79
I;G?HI?9
H
V >> **
4 &
I > 2 &
V AM IE 4
`=
Reverse Diode
"?E: ; <EGL7G
: KEBI7=;
V M>
0 ;K;G
H; G;9
EK;GN I?C ;
t cc
0 ;K;G
H; G;9
EK;GN 9
>7G=;
Q cc
. ;7AG;K;G
H; G;9
EK;GN 9
JGG
;DI
I cc_
V AM 4 I @ T \ Y!
V L 4 I @7I M
Vi @)Vt [ H
+$
( 1 2" 7D: ( # 1 " ,$
. JB
H; L?: I> t b B
?C ?I;: 8N T \&_Si
-$
0 ;F;I?I
?K; 7K7B7D9
>; 9
7JH;H 7: : ?I?ED7BFEL;GBEHH;H I
>7I9
7D 8; 9
7B
9
JB
7I;: 7H P ;P7E ;L%f.
.$
I M>"I >
: i )Vt " [ H
V >=^[`] 4 V bWS]6V #<L$>MM
T \6T \_Si
?: ;DI?9
7BB
EL 7D: >?=> H?: ; HL?I9
>
/$
C a#Wc$ ?H 7 <?M;: 9
7F79
?I7D9
;I
>7I=?K;H I>; H7C ; HIEG;: ;D;G=N 7H C add L>?B; V >M ?H G?H?D= <GEC IE V >MM(
0$
C a#ec$ ?H 7 <?M;: 9
7F79
?I7D9
;I
>7I=?K;H I>; H7C ; 9
>7G=?D= I?C ; 7H C add L>?B; V >M ?H G?H?D= <GEC IE V >MM(
0 ;K 2.1
F7=; 2013-07-31
IPD50R520CP
1 Power dissipation
2 Safe operating area
P eae7X#T =$
I >7X#V >M T = Y! D 7*
F7G7C ;I;G
tb
102
70
60
B?C ?I;: 8N EDHI7I;
cWd[deS`UW
[H
50
[H
40
[H
ID [A]
Ptot [W]
101
C H
30
C H
100
>=
20
10
10-1
0
0
25
50
75
100
125
150
100
175
101
TC [°C]
102
103
VDS [V]
3 Max. transient thermal impedance
4 Typ. output characteristics
R#eZD=$7X#eb
I >7X#V >M T \ Y!
F7G7C ;I;G
D=t b)T
F7G7C ;I;G V AM
101
20
4
4
4
15
*(/
100
4
ID [A]
ZthJC [K/W]
*(,
*(+
*(*/
4
10
*(*,
10-1
*(*+
4
H?D=B;FJBH;
5
4
4
10-2
0
10-5
10-4
10-3
10-2
10-1
100
tp [s]
0 ;K 2.1
0
5
10
15
20
VDS [V]
F7=; 2013-07-31
IPD50R520CP
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I >7X#V >M T \ Y!
R >M#a`$7X#I > T \ Y!
F7G7C ;I;G
V AM
F7G7C ;I;G V AM
2
12
4
4
4
1,9
4
10
4
4
4
1,8
4
4
1,7
8
4
RDS(on) [ ]
ID [A]
4
6
1,6
1,5
4
1,4
4
1,3
4
2
1,2
1,1
0
0
5
10
15
20
0
25
2
4
6
VDS [V]
8
10
12
14
ID [A]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R >M#a`$7X#T \ I > V AM 4
I >7X#V AM PV >Ml8,lI >lR >M#a`$_Si
F7G7C ;I;G T \
1,4
25
1,3
Y!
1,2
20
1,1
15
0,9
ID [A]
RDS(on) [ ]
1
0,8
0,7
Y!
10
ejb
0,6
0,5
5
0,4
0,3
0,2
0
-60
-20
20
60
100
140
180
Tj [°C]
0 ;K 2.1
0
2
4
6
8
10
VGS [V]
F7=; 2013-07-31
IPD50R520CP
9 Typ. gate charge
10 Forward characteristics of reverse diode
V AM7X#Q YSeW I > FJB
H;:
I @7X#V M>$
F7G7C ;I;G
V >>
F7G7C ;I;G T \
102
10
9
8
Y!
4
7
Y!
Y!
101
Y!
4
IF [A]
VGS [V]
6
5
4
100
3
2
1
10-1
0
0
5
10
0
15
0,5
1
Qgate [nC]
1,5
VSD [V]
12 Drain-source breakdown voltage
E ;M7X#T \ I > V >> 4
V <L#>MM$7X#T \ I > C 175
580
150
560
125
540
VBR(DSS) [V]
EAS [mJ]
11 Avalanche energy
100
75
520
500
50
480
25
460
0
440
25
75
125
175
Tj [°C]
0 ;K 2.1
2
-60
-20
20
60
100
140
180
Tj [°C]
F7=; 2013-07-31
IPD50R520CP
13 Typ. capacitances
14 Typ. Coss stored energy
C 7X#V >M V AM 4 f + & O
E add= X(V >M)
4
104
=[dd
3
Eoss [µJ]
C [pF]
103
102
=add
101
2
1
=cdd
100
0
0
100
200
300
400
500
VDS [V]
0 ;K 2.1
0
100
200
300
400
500
VDS [V]
F7=; 2013-07-31
IPD50R520CP
Definition of diode switching characteristics
0 ;K 2.1
F7=; 2013-07-31
IPD50R520CP
PG-TO252-3-1/PG-TO252-3-11/PG-TO252-3-21 (D-PAK)
0 ;K 2.1
F7=; 2013-07-31
IPD50R520CP
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
#hhh([`X[`Wa`(Ua_$(
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
i t d d to
intended
t be
b implanted
i
l t d iin th
the h
human b
body
d or tto supportt and/or
d/ maintain
i t i and
d sustain
t i
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
0 ;K 2.1
F7=; 2013-07-31