IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W 4 EHB: M ?: ; 8;IJ/ =L"a`# ?D 1, W)EM ;IJ<?=KH; E<C ;H?J/ , + N . Y V !0 8M\_Sj ..) O R =L"a`#%_Sj )'*-) " -1 `< Q Y%fkb W 2 BJH7 BEM =7J ; 9>7H=; W " NJH;C ; : L: JH7J;: W % ?=> F;7A 9KHH;DJ97F78?B?JO W - 8 <H;; B;7: FB7J?D= / E% 0 9EC FB?7DJ W . K7B!<?;: 799EH: ?D= JE ' " !" 1, # - )# CoolMOS CP is designed for: W% 7H: 7D: IE<JIM ?J9>?D= 0 * - 0 <EHI;HL;HFEM ;HIKFFB?;I W * -# <EH 15 + EJ;8EEA 7: 7FJ;H - !- 7D: ) ! 13 W- 4 * IJ 7=;I <EH0 ;HL;H : 7FJ;H Type Package Marking BI9.)K*-)<I I@&MH++)?I .K*-)I Maximum ratings, 7JT \ Z KDB;II EJ>;HM ?I; IF;9?<?;: Parameter EDJ ?DKEKI : H7?D 9KHH;DJ*# Symbol Conditions I= Value T < Z +, T < Z *. - KBI;: : H7?D 9KHH;DJ+# I =%bg^eW T < Z ./ L7B7D9>; ;D;H=O I?D=B; FKBI; E 9L I = V == 3 /*/ L7B7D9>; ;D;H=O H;F;J?J ?L; t 9K+#%,# E 9K I = V == 3 )'2, L7B7D9>; 9KHH;DJ H;F;J?J?L; t 9K+#%,# I 9K * , 0 # " 1 : v (Vt HK==;: D;II : v (Vt $ 7J; IEKH9; LEBJ7=; V @L - EM ;H: ?II?F7J?ED P faf , F;H7J?D= 7D: IJEH7=; J;C F;H7JKH; T \ T efY * EKDJ ?D= JEHGK; / ;L Unit 9 _C 2', 9 V =L 3 .) O(`e efSf[U w+) O w,) < % P T < Z * I9H;M I F7=; ,- P v< + 9C IPA50R140CP Maximum ratings, 7JT \ Z KDB;II EJ>;HM ?I; IF;9?<?;: Parameter EDJ ?DKEKI : ?E: ; <EHM 7H: 9KHH;DJ*# Value Symbol Conditions IL Unit *- 9 T < Z !?E: ; FKBI; 9KHH;DJ+# I L%bg^eW ./ / ;L;HI; : ?E: ; : v (Vt -# Vv (Vt *. O(`e Parameter Symbol Conditions Values Unit min. typ. max. & & ,'/. Thermal characteristics 1>;HC 7B H;I?IJ7D9; @ KD9J?ED 97I; R fZC< 1>;HC 7B H;I?IJ7D9; @ KD9J?ED S_T[W`f R fZC9 ^WSVWV & & /+ 0 EB: ;H?D= J;C F;H7JKH; M 7L;IEB: ;H?D= EDBO 7BBEM ;: 7JB;7: I T ea^V C C ?D <HEC 97I; <EH I & & +/) v< .)) & & O D(P Electrical characteristics, 7JT \ Z KDB;II EJ>;HM ?I; IF;9?<?;: Static characteristics !H7?D IEKH9; 8H;7A: EM D LEBJ7=; V ";K#=LL V @L 3 I = \ $ 7J; J>H;I>EB: LEBJ7=; V @L"fZ# V =L6V @L I = C +'. , ,'. 6;HE =7J; LEBJ7=; : H7?D 9KHH;DJ I =LL V =L 3 V @L 3 T \ Z & & + V =L 3 V @L 3 T \ Z & +) & x9 $ 7J; IEKH9; B;7A7=; 9KHH;DJ I @LL V @L 3 V =L 3 & & *)) `9 !H7?D IEKH9; ED IJ7J; H;I?IJ7D9; R =L"a`# V @L 3 I = T \ Z & )'*, )'*- " V @L 3 I = T \ Z & )',+ & f * % P EF;D : H7?D $ 7J; H;I?IJ 7D9; / ;L R@ F7=; " IPA50R140CP Parameter Values Symbol Conditions Unit min. typ. max. & +.-) & & **) & & **) & Dynamic characteristics &DFKJ97F79?J7D9; C [ee , KJFKJ97F79?J7D9; C aee " <<;9J?L; EKJ FKJ97F79?J7D9; ;D;H=O C a"Wd# dW^SfWV.# V @L 3 V =L 3 f * % P b? V @L 3 V =L 3 JE 3 " <<;9J?L; EKJ FKJ97F79?J7D9; J ?C ; dW^SfWV/# C a"fd# & +,) & 1KHD ED : ;B7O J?C ; t V"a`# & ,. & / ?I; J?C ; td & *- & 1KHD E<<: ;B7O J?C ; t V"aXX# & 1) & # 7BB J?C ; tX & 1') & $ 7J; JE IEKH9; 9>7H=; Q Ye & ** & $ 7J; JE : H7?D 9>7H=; Q YV & *. & $ 7J; 9>7H=; JEJ 7B QY & -1 /- $ 7J; FB7J;7K LEBJ 7=; V b^SfWSg & .'+ & O & )'2 *'+ O & -)) & `e & .'/ & x< & +/ & 9 V == 3 V @L 3 I = R @ " `e $ 7J; >7H=; >7H79J;H?IJ ?9I V == 3 I = V @L JE 3 `< Reverse Diode !?E: ; <EHM 7H: LEBJ7=; V L= / ;L;HI; H;9EL;HO J?C ; t dd / ;L;HI; H;9EL;HO 9>7H=; Q dd - ;7A H;L;HI; H;9EL;HO 9KHH;DJ I dd_ V @L 3 I ? T \ Z V K 3 I ?6I L Vi ?(Vt \ I )# ' 0 1! 7D: ' " 0 ! )?C ?J;: EDBO 8O 1\%_Sj +# - KBI; M ?: J> t b B?C ?J;: 8OT \%_Sj ,# / ;F;J?J?L; 7L7B7D9>; 97KI;I 7: : ?J ?ED7B FEM ;HBEII;I J >7J97D 8; 97B9KB7J;: 7IP 9O6E 9K$f. &L="B= : ?: J " \ I 3 .# C a"fd# ?I 7 <?N;: 97F79?J 7D9; J >7J=?L;I J>; I7C ; 9>7H=?D= J?C ; 7IC aee M >?B; V =L ?I H?I?D= <HEC J E V =LL' /# C a"Wd# ?I 7 <?N;: 97F79?J7D9; J>7J=?L;I J>; I7C ; IJEH;: ;D;H=O 7IC aee M >?B; V =L ?I H?I?D= <HEC JE V =LL' 0# C a"fd# ?I 7 <?N;: 97F79?J 7D9; J >7J=?L;I J>; I7C ; 9>7H=?D= J?C ; 7IC aee M >?B; V =L ?I H?I?D= <HEC J E V =LL' / ;L =<^[`] 3 3 bWS]5O";K#=LL 1 \5M\_Sj ?: ;DJ ?97B BEM 7D: >?=> I?: ; IM ?J 9> F7=; IPA50R140CP 1 Power dissipation 2 Safe operating area P faf6X"T <# I =6X"V =L T < Z D 6) F7H7C ;J;H t b 102 35 \I 30 \I B?C ?J ;: 8O ED IJ7J ; dWe[efS`UW \I 25 20 CI I D [A] P tot [W] 10 1 CI 15 100 =< 10 5 10-1 0 0 50 100 100 150 101 T C [°C] 102 103 V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics R"fZC<#6X"fb I =6X"V =L T \ Z F7H7C ;J;H D=t b(T F7H7C ;J;H V @L 101 75 3 3 60 3 )'. 3 100 Z thJC [K/W] )'+ I D [A] 45 )'* 3 )'). 30 10-1 )')+ 3 )')* 15 3 I?D=B; FKBI; 10 3 -2 10-5 0 10-4 10-3 10-2 10-1 100 101 / ;L 0 5 10 15 20 V DS [V] t p [s] F7=; IPA50R140CP 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I =6X"V =L T \ Z R =L"a`#6X"I = T \ Z F7H7C ;J;H V @L F7H7C ;J;H V @L 0.8 50 3 3 3 40 0.7 3 3 3 3 3 0.6 3 R DS(on) [ ] I D [A] 30 3 0.5 3 20 10 3 0.4 3 0.3 0.2 0 0 5 10 15 20 0 25 10 20 V DS [V] 30 40 50 60 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R =L"a`#6X"T \ I = V @L 3 I =6X"V @L QV =Lm7+mI =mR =L"a`#_Sj F7H7C ;J;H T \ 0.35 90 0.3 75 0.25 60 I D [A] R DS(on) [ ] Z 0.2 fkb 0.15 30 0.1 15 0.05 0 -60 -30 0 30 60 90 120 150 180 T j [°C] / ;L Z 45 0 3 5 8 10 V GS [V] F7=; IPA50R140CP 9 Typ. gate charge 10 Forward characteristics of reverse diode V @L6X"Q YSfW I = FKBI;: I ?6X"V L=# F7H7C ;J;H V == F7H7C ;J;H T \ 102 10 Z 8 3 Z 10 3 1 Z Z I F [A] V GS [V] 6 4 100 2 10 0 0 10 20 30 40 -1 0 50 0.5 1 Q gate [nC] 1.5 11 Avalanche energy 12 Drain-source breakdown voltage E 9L6X"T \ I = V == 3 V ;K"=LL#6X"T \ I = C 580 700 560 600 540 V BR(DSS) [V] 500 E AS [mJ] 400 300 520 500 480 200 460 100 440 0 25 75 125 175 -60 -20 20 60 100 140 180 T j [°C] T j [°C] / ;L 2 V SD [V] F7=; IPA50R140CP 13 Typ. capacitances 14 Typ. Coss stored energy C 6X"V =L V @L 3 f * % P E aee= X(V =L) 105 12 10 104 <[ee 8 E oss [µJ] C [pF] 10 3 <aee 6 102 4 10 1 2 <dee 10 0 0 0 100 200 300 400 500 V DS [V] / ;L 0 100 200 300 400 500 V DS [V] F7=; IPA50R140CP Definition of diode switching characteristics / ;L F7=; IPA50R140CP PG-TO220-3-31: Outline / Fully isolated package (2500VAC; 1minute) / ;L F7=; IPA50R140CP Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office "iii'[`X[`Wa`'Ua_#' Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. / ;L F7=;