INFINEON IPA50R140CP

IPA50R140CP
CoolMOSTM Power Transistor
Product Summary
Features
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CoolMOS CP is designed for:
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Type
Package
Marking
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Maximum ratings, 7JT \ Z KDB;II EJ>;HM ?I; IF;9?<?;:
Parameter
EDJ
?DKEKI : H7?D 9KHH;DJ*#
Symbol Conditions
I=
Value
T < Z
+,
T < Z
*.
- KBI;: : H7?D 9KHH;DJ+#
I =%bg^eW
T < Z
./
L7B7D9>; ;D;H=O I?D=B; FKBI;
E 9L
I = V == 3
/*/
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?L; t 9K+#%,#
E 9K
I = V == 3
)'2,
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: v (Vt
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T \ T efY
* EKDJ
?D= JEHGK;
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9
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2',
9
V =L 3
.)
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w,)
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P
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IPA50R140CP
Maximum ratings, 7JT \ Z KDB;II EJ>;HM ?I; IF;9?<?;:
Parameter
EDJ
?DKEKI : ?E: ; <EHM 7H: 9KHH;DJ*#
Value
Symbol Conditions
IL
Unit
*-
9
T < Z
!?E: ; FKBI; 9KHH;DJ+#
I L%bg^eW
./
/ ;L;HI; : ?E: ; : v (Vt -#
Vv (Vt
*.
O(`e
Parameter
Symbol Conditions
Values
Unit
min.
typ.
max.
&
&
,'/.
Thermal characteristics
1>;HC 7B H;I?IJ7D9; @
KD9J?ED 97I;
R fZC<
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&
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M 7L;IEB: ;H?D= EDBO 7BBEM ;: 7JB;7: I
T ea^V
C C ?D
<HEC 97I; <EH I
&
&
+/)
v<
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&
&
O
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Electrical characteristics, 7JT \ Z KDB;II EJ>;HM ?I; IF;9?<?;:
Static characteristics
!H7?D
IEKH9; 8H;7A: EM D LEBJ7=;
V ";K#=LL V @L 3 I = \ $ 7J; J>H;I>EB: LEBJ7=;
V @L"fZ#
V =L6V @L I = C +'.
,
,'.
6;HE =7J; LEBJ7=; : H7?D 9KHH;DJ
I =LL
V =L 3 V @L 3 T \ Z
&
&
+
V =L 3 V @L 3 T \ Z
&
+)
&
x9
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IEKH9; B;7A7=; 9KHH;DJ
I @LL
V @L 3 V =L 3
&
&
*))
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!H7?D
IEKH9; ED
IJ7J; H;I?IJ7D9;
R =L"a`#
V @L 3 I = T \ Z
&
)'*,
)'*-
"
V @L 3 I = T \ Z
&
)',+
&
f * % P EF;D : H7?D
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F7=; "
IPA50R140CP
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
&
+.-)
&
&
**)
&
&
**)
&
Dynamic characteristics
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C [ee
, KJFKJ97F79?J7D9;
C aee
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FKJ97F79?J7D9; ;D;H=O
C a"Wd#
dW^SfWV.#
V @L 3 V =L 3 f * % P
b?
V @L 3 V =L 3
JE 3
" <<;9J?L; EKJ
FKJ97F79?J7D9; J
?C ;
dW^SfWV/#
C a"fd#
&
+,)
&
1KHD
ED : ;B7O J?C ;
t V"a`#
&
,.
&
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td
&
*-
&
1KHD
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t V"aXX#
&
1)
&
# 7BB J?C ;
tX
&
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&
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&
**
&
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&
*.
&
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QY
&
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&
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&
O
&
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&
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&
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&
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&
x<
&
+/
&
9
V == 3 V @L 3 I = R @ "
`e
$ 7J; >7H=; >7H79J;H?IJ
?9I
V == 3 I = V @L JE 3
`<
Reverse Diode
!?E: ; <EHM 7H: LEBJ7=;
V L=
/ ;L;HI; H;9EL;HO J?C ;
t dd
/ ;L;HI; H;9EL;HO 9>7H=;
Q dd
- ;7A H;L;HI; H;9EL;HO 9KHH;DJ
I dd_
V @L 3 I ? T \ Z
V K 3 I ?6I L
Vi ?(Vt \ I
)#
' 0 1! 7D: ' " 0 ! )?C ?J;: EDBO 8O 1\%_Sj
+#
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,#
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?ED7B FEM ;HBEII;I J
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7D9; J
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E V =LL'
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0#
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7D9; J
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F7=; IPA50R140CP
1 Power dissipation
2 Safe operating area
P faf6X"T <#
I =6X"V =L T < Z D 6)
F7H7C ;J;H t b
102
35
\I
30
\I
B?C ?J
;: 8O ED
IJ7J
;
dWe[efS`UW
\I
25
20
CI
I D [A]
P tot [W]
10
1
CI
15
100
=<
10
5
10-1
0
0
50
100
100
150
101
T C [°C]
102
103
V DS [V]
3 Max. transient thermal impedance
4 Typ. output characteristics
R"fZC<#6X"fb
I =6X"V =L T \ Z
F7H7C ;J;H D=t b(T
F7H7C ;J;H V @L
101
75
3
3
60
3
)'.
3
100
Z thJC [K/W]
)'+
I D [A]
45
)'*
3
)').
30
10-1
)')+
3
)')*
15
3
I?D=B; FKBI;
10
3
-2
10-5
0
10-4
10-3
10-2
10-1
100
101
/ ;L 0
5
10
15
20
V DS [V]
t p [s]
F7=; IPA50R140CP
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I =6X"V =L T \ Z
R =L"a`#6X"I = T \ Z
F7H7C ;J;H V @L
F7H7C ;J;H V @L
0.8
50
3
3
3
40
0.7
3
3
3
3
3
0.6
3
R DS(on) [ ]
I D [A]
30
3
0.5
3
20
10
3
0.4
3
0.3
0.2
0
0
5
10
15
20
0
25
10
20
V DS [V]
30
40
50
60
I D [A]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R =L"a`#6X"T \ I = V @L 3
I =6X"V @L QV =Lm7+mI =mR =L"a`#_Sj
F7H7C ;J;H T \
0.35
90
0.3
75
0.25
60
I D [A]
R DS(on) [ ]
Z
0.2
fkb
0.15
30
0.1
15
0.05
0
-60
-30
0
30
60
90
120
150
180
T j [°C]
/ ;L Z
45
0
3
5
8
10
V GS [V]
F7=; IPA50R140CP
9 Typ. gate charge
10 Forward characteristics of reverse diode
V @L6X"Q YSfW I = FKBI;:
I ?6X"V L=#
F7H7C ;J;H V ==
F7H7C ;J;H T \
102
10
Z 8
3
Z 10
3
1
Z
Z
I F [A]
V GS [V]
6
4
100
2
10
0
0
10
20
30
40
-1
0
50
0.5
1
Q gate [nC]
1.5
11 Avalanche energy
12 Drain-source breakdown voltage
E 9L6X"T \ I = V == 3
V ;K"=LL#6X"T \ I = C 580
700
560
600
540
V BR(DSS) [V]
500
E AS [mJ]
400
300
520
500
480
200
460
100
440
0
25
75
125
175
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
/ ;L 2
V SD [V]
F7=; IPA50R140CP
13 Typ. capacitances
14 Typ. Coss stored energy
C 6X"V =L V @L 3 f * % P
E aee= X(V =L)
105
12
10
104
<[ee
8
E oss [µJ]
C [pF]
10
3
<aee
6
102
4
10
1
2
<dee
10
0
0
0
100
200
300
400
500
V DS [V]
/ ;L 0
100
200
300
400
500
V DS [V]
F7=; IPA50R140CP
Definition of diode switching characteristics
/ ;L F7=; IPA50R140CP
PG-TO220-3-31: Outline / Fully isolated package (2500VAC; 1minute)
/ ;L F7=; IPA50R140CP
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
"iii'[`X[`Wa`'Ua_#'
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
/ ;L F7=;