JCS18N50H - 吉林华微电子股份有限公司

N 沟道增强型场效应晶体管
N- CHANNEL MOSFET
R
JCS18N50H
主要参数
MAIN CHARACTERISTICS
ID
18 A
VDSS
500 V
Rdson(@Vgs=10V)
0.27Ω
Qg
50nC
封装 Package
用途
APPLICATIONS
z 高频开关电源
z 电子镇流器
z UPS 电源
z High efficiency switch
产品特性
FEATURES
z 低栅极电荷
z 低 Crss (典型值 25pF)
z 开关速度快
z 产品全部经过雪崩测试
z 高抗 dv/dt 能力
z RoHS 产品
z Low gate charge
z Low Crss (typical 25pF )
z Fast switching
z 100% avalanche tested
z Improved dv/dt capability
z RoHS product
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
订货信息 ORDER MESSAGE
订 货 型 号
印
Order codes
Marking
Package
JCS18N50FH-O-F-N-B
JCS18N50FH
TO-220MF
版本:201007A
记
封
无卤素
装
否
包
装
器件重量
Halogen
Free
Packaging
Device Weight
NO
条管 Tube
2.20 g(typ)
1/8
JCS18N50FH
R
ABSOLUTE RATINGS (Tc=25℃)
绝对最大额定值
项
目
符
Parameter
最高漏极-源极直流电压
Drain-Source Voltage
连续漏极电流
Drain Current -continuous
号
Symbol
VDSS
ID
T=25℃
T=100℃
数
值
单
位
Value
Unit
500
V
18.0*
A
11.0*
A
最大脉冲漏极电流(注 1)
Drain Current -pulse (note 1)
IDM
72*
A
最高栅源电压
Gate-Source Voltage
VGSS
±30
V
单脉冲雪崩能量(注 2)
Single Pulsed Avalanche Energy(note 2)
EAS
900
mJ
雪崩电流(注 1)
Avalanche Current (note 1)
IAR
18.0
A
重复雪崩能量(注 1)
Repetitive Avalanche Current (note 1)
EAR
22.7
mJ
二极管反向恢复最大电压变化速率(注 3)
Peak Diode Recovery dv/dt (note 3)
dv/dt
4.5
V/ns
耗散功率
Power Dissipation
PD
TC=25℃
-Derate
above 25℃
39.0
W
0.31
W/℃
最高结温及存储温度
Operating and Storage Temperature Range
TJ,TSTG
-55~+150
℃
引线最高焊接温度
Maximum Lead Temperature for Soldering Purposes
TL
300
℃
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
版本:201007A
2/8
JCS18N50FH
R
电特性 ELECTRICAL CHARACTERISTIC
项
目
Parameter
符
号
Symbol
测试条件
最小 典型 最 大 单 位
Tests conditions
Min Typ Max Units
关态特性 Off –Characteristics
漏-源击穿电压
Drain-Source Voltage
BVDSS
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBVDSS ID=250μA, referenced to
25℃
/ΔTJ
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
IDSS
正向栅极体漏电流
Gate-body leakage current, forward
反向栅极体漏电流
Gate-body leakage current, reverse
ID=250μA, VGS=0V
500
-
-
-
0.5
-
V/℃
VDS=500V, VGS=0V, TC=25℃
-
-
1
μA
VDS=400V, TC=125℃
-
-
10
μA
IGSSF
VDS=0V, VGS =30V
-
100
nA
IGSSR
VDS=0V, VGS =-30V
-
阈值电压
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
静态导通电阻
Static Drain-Source On-Resistance
RDS(ON) VGS =10V , ID=9.0A
-
正向跨导
Forward Transconductance
gfs
-
-
V
-100 nA
通态特性 On-Characteristics
VDS = 40V , ID=9.0A(note 4)
3.0
-
5.0
V
0.22 0.27
Ω
24
-
S
动态特性 Dynamic Characteristics
输入电容
Input capacitance
Ciss
输出电容
Output capacitance
Coss
反向传输电容
Reverse transfer capacitance
Crss
版本:201007A
VDS=25V,
VGS =0V,
f=1.0MHZ
-
2300 2920 pF
-
350 450
pF
-
27
pF
3/8
43
JCS18N50FH
R
电特性 ELECTRICAL CHARACTERISTICS
项
目
符
Parameter
号
Symbol
测试条件
最小 典型 最大 单位
Tests conditions
Min Typ Max Units
开关特性 Switching –Characteristics
延迟时间 Turn-On delay time
td(on)
上升时间 Turn-On rise time
tr
延迟时间 Turn-Off delay time
VDD=250V,ID=18A,RG=25Ω
(note 4,5)
-
53
130
ns
-
169 350
ns
td(off)
-
97
200
ns
下降时间 Turn-Off Fall time
tf
-
85
195
ns
栅极电荷总量 Total Gate Charge
Qg
-
50
60
nC
栅-源电荷 Gate-Source charge
Qgs
-
12.5
-
nC
栅-漏电荷 Gate-Drain charge
Qgd
-
22
-
nC
VDS =400V ,
ID=18A
VGS =10V(note 4,5)
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain-Source
Diode Forward Current
IS
-
-
18
A
正向最大脉冲电流
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
-
-
72
A
1.4
V
正向最大连续电流
Maximum Continuous Drain-Source
Diode Forward Current
VSD
反向恢复时间
Reverse recovery time
trr
反向恢复电荷
Reverse recovery charge
Qrr
VGS=0V, IS=18A
-
VGS=0V, IS=18A
dIF/dt=100A/μs (note 4)
465
ns
5.2
μC
热特性 THERMAL CHARACTERISTIC
项
目
Parameter
符
号
Symbol
最大值
单
Value
JCS18N50FH
位
Unit
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
3.20
℃/W
结到环境的热阻
Thermal Resistance, Junction to Ambient
Rth(j-A)
62.5
℃/W
注:
Notes:
1:脉冲宽度由最高结温限制
1:Pulse width limited by maximum junction temperature
2:L=5.0mH, IAS=18A, VDD=50V, RG=25 Ω,起始结温
2:L=5.0mH, IAS=18A, VDD=50V, RG=25 Ω,Starting
TJ=25℃
TJ=25℃
3:ISD ≤18A,di/dt ≤200A/μs, VDD≤BVDSS,起始结温 TJ=25℃ 3:ISD ≤18A,di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ=25℃
4:Pulse Test:Pulse Width ≤300μs, Duty Cycle≤2%
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
版本:201007A
5:Essentially independent of operating temperature
4/8
JCS18N50FH
R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
On-Region Characteristics
Transfer Characteristics
2
10
2
10
1
ID Drain Current[A]
Top
ID Drain Current[A]
15.0V
10.0V
9.0V
8.0V
7.0V
6.5V
6.0V
Bottom 5.5V
10
1
10
125℃
-55℃
25℃
0
10
0
10
1
10
Note:
1.VDS=40V
2.250μs Pulse Test
0
2
10
4
6
VDS Drain-Source Voltage[V]
8
10
12
VGS Gate-Source Voltage[V]
On-Resistance Variation vs
Drain Current and Gate Voltage
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
0.5
IDR Reverse Drain Current[A]
10
V GS =10V
0.3
0.2
V GS=20V
0.1
Note :T j=25 ℃
0.0
0
2
4
6
8
10
12
14
16
18
20
22
1
150℃
25℃
10
Note:
1.VGS=0V
2.250μs Pulse Test
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
VSD Source-Drain voltage[V]
ID [A]
Capacitance Characteristics
Capacitance Characteristics
12
VDS=400V
VDS=250V
VDS=100V
10
VGS Gate Source Voltage[V]
RDS (on) [ Ω ]
0.4
8
6
4
2
0
版本:201007A
0
5
10
15
20
25
30
35
Qg Toltal Gate Charge [nC]
5/8
40
45
50
JCS18N50FH
R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Breakdown Voltage Variation
On-Resistance Variation
vs. Temperature
vs. Temperature
3.0
1.2
R D(on)(Normalized)
1.0
0.9
-50
0
50
100
150
2.0
1.5
1.0
Notes:
1. VGS=10V
2. ID=9.0A
0.5
0.0
-100
200
-75
-50
-25
0
25
50
75
100
125
150
Tj [ ℃ ]
Tj [ ℃ ]
Maximum Drain Current vs. Case
Temperature
Maximum Safe Operating Area
ID Drain Current [A]
20
15
10
5
0
25
50
75
100
125
TC Case Temperature [℃ ]
(t) Thermal Response
Transient Thermal Response Curve
0
10
0.5
0.2
0.1
Notes:
1 Zθ JC(t)=3.20℃ /W Max
2 Duty Factor, D=t1/t2
3 TJM-Tc=PDM* Zθ JC(t)
0.05
-1
10
0.02
0.01
JC
0.8
Notes:
1. VGS=0V
2. ID=250μA
PDM
single pulse
Zθ
BVDS(Normalized)
2.5
1.1
t1
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
t1 Square Wave Pulse Duration [sec]
版本:201007A
6/8
150
R
JCS18N50FH
外形尺寸 PACKAGE MECHANICAL DATA
TO-220MF
版本:201007A
单位 Unit :mm
7/8
JCS18N50FH
R
注意事项
NOTE
1.吉林华微电子股份有限公司的产品销售分
为直销和销售代理,无论哪种方式,订货
时请与公司核实。
2.购买时请认清公司商标,如有疑问请与公
司本部联系。
3.在电路设计时请不要超过器件的绝对最大
额定值,否则会影响整机的可靠性。
4.本说明书如有版本变更不另外告知
1.
Jilin Sino-microelectronics co., Ltd sales its
product either through direct sales or sales
agent , thus, for customers, when ordering ,
please check with our company.
2. We strongly recommend customers check
carefully on the trademark when buying our
product, if there is any question, please
don’t be hesitate to contact us.
3. Please do not exceed the absolute
maximum ratings of the device when circuit
designing.
4. Jilin Sino-microelectronics co., Ltd reserves
the right to make changes in this
specification sheet and is subject to
change without prior notice.
联系方式
CONTACT
吉林华微电子股份有限公司
JILIN SINO-MICROELECTRONICS CO., LTD.
公司地址:吉林省吉林市深圳街 99 号
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel: 86-432-64678411
Fax:86-432-64665812
Web Site: www.hwdz.com.cn
邮编:132013
总机:86-432-64678411
传真:86-432-64665812
网址: www.hwdz.com.cn
HTU
UTH
市场营销部
地址:吉林省吉林市深圳街 99 号
邮编:132013
电话: 86-432-64675588
64675688
64678411-3098/3099
传真: 86-432-64671533
版本:201007A
HTU
UTH
MARKET DEPARTMENT
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel:
86-432-64675588
64675688
64678411-3098/3099
Fax: 86-432-64671533
8/8