VCR11N VOTLAGE CONTROLLED RESISTOR

VCR11N
N-CHANNEL JFET
VOLTAGE CONTROLLED
RESISTOR
FEATURES
SECOND SOURCE FOR SILICONIX VCR11N
VOLTAGE CONTROLLED RESISTANCE
100 to 200Ω
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
TO-71
TOP VIEW
Maximum Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature
-55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation@TA=25°C
300mW
Maximum Current
Forward Gate Current
10mA
Maximum Voltages
Gate to Drain Voltage
25V
Gate to Source Voltage
25V
*Contact the factory for surface mount package
options and pin outs.
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN
BVGSS
Gate to Source Breakdown Voltage
-25
VGS(off)
Gate to Source Cutoff Voltage
-8
-12
100
100
0.95
-0.2
200
200
1
0.95
1
IGSS
rds(on)
Gate Reverse Current
Dynamic Drain to Source
On Resistance
TYP
MAX UNITS
V
nA
Ω
Ω
CONDITIONS
IG = -1µA, VDS = 0V
ID = 1µA, VDS = 10V
VGS = -15V, VDS = 0V
VGS = 0V, ID = 500µA
VGS = 0V, ID = 1mA
VGS = 0V, ID = 500µA
rDS1
rDS2
Static Drain to Source
On Resistance Ratios
Cdgo
Drain to Gate Capacitance
8
pF
VGD = -10V, IS = 0A, f = 1MHz
Csgo
Source to Gate Capacitance
8
pF
VGS = -10V, ID = 0A, f = 1MHz
1.
VGS = 0V, ID = 1mA
Absolute maximum ratings are limiting values above which serviceability may be impaired.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
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Doc 20116 8/16/12 Rev A14 ECN# VCR11N