4N47BU 4N48BU 4N49BU JAN, JANTX, JANTXV, AND JANS OPTOCOUPLERS OPTOELECTRONIC PRODUCTS DIVISION 08/05/2014 Features: Certified to MIL-PRF-19500/548 High reliability Base lead provided for conventional transistor biasing High blocking voltage transistor Hermetically sealed for reliability and stability Stability over wide temperature range High voltage electrical isolation Applications: Line Receivers Switchmode Power Supplies Signal ground isolation Process Control input/output isolation DESCRIPTION Very high gain optocoupler utilizing GaAIAs infrared LED optically coupled to an N-P-N silicon phototransistor packaged in a hermetically sealed 6-pin leadless chip carrier. The 4N47BU, 4N48BU and 4N49BU optocouplers can be supplied to customer specifications as well as JAN, JANTX, JANTXV, and JANS quality levels. *ABSOLUTE MAXIMUM RATINGS Input to Output Voltage ......................................................................................................................................................... 1 kV Collector-Base Voltage .......................................................................................................................................................... 60 V Collector-Emitter Voltage ...................................................................................................................................................... 60 V Emitter-Base Voltage ............................................................................................................................................................... 7 V Input Diode Reverse Voltage................................................................................................................................................... 2 V Input Diode Continuous Forward Current at (or below) 25°C Free-Air Temperature (see note 1) ................................... 40 mA Continuous Collector Current ............................................................................................................................................. 50 mA Peak Diode Current (Value Applies for tW 1 s, PRR 300pps) ....................................................................................... 1 A Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ............................... 300 mW Operating Free-Air Temperature Range ............................................................................................................-55°C to +125°C Storage Temperature..........................................................................................................................................-65°C to +125°C Lead Temperature (10 seconds maximum) ....................................................................................................................... 240°C Notes: 1. Derate linearly to 125°C free-air temperature at the rate of 0.40 mA/°C. 2. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C. * JEDEC registered data Package Dimensions 0.250 [6.35] 0.240 [6.10] PIN 1 IDENTIFIER Schematic Diagram 0.080 [2.03] 0.066 [1.68] 1 A C 3 0.175 [4.45] 0.165 [4.19] E 0.028 [0.71] 0.022 [0.56] 2 1 0.098 [2.49] 0.082 [2.08] 6 0.105 [2.67] 0.095 [2.41] 3 4 5 6 K 0.055 [1.40] 0.045 [1.14] 0.070 [1.78] 5 PLS 0.060 [1.52] ALL DIMENSIONS ARE IN INCHES [MILLIMETERS] Micropac Industries cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. Micropac reserves the right to make changes at any time in order to improve design and to supply the best product possible. MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E.Walnut St., Garland, TX 75040 (972)272-3571 Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM B 5 4 4N47BU, 4N48BU, and 4N49BU JAN, JANTX, JANTXV, AND JANS OPTOCOUPLERS 08/05/2014 TA = 25C Unless otherwise specified ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Input Diode Static Reverse Current MIN TYP IR -55C +25C +100C Input Diode Static Forward Voltage VF 1.0 0.8 0.7 1.4 MAX UNITS TEST CONDITIONS 100 nA VR = 2 V 1.7 1.5 1.3 V IF = 10 mA MAX NOTE TA = 25C Unless otherwise specified OUTPUT TRANSISTOR SYMBOL MIN UNITS TEST CONDITIONS Collector-Base Breakdown Voltage PARAMETER V(BR)CBO 60 V IC = 100 A, IE = 0, IF = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 60 V IC = 1 mA, IB = 0, IF = 0 Emitter-Collector Breakdown Voltage V(BR)EBO 7 V IC = 0, IB = 100 A, IF = 0 MAX UNITS TEST CONDITIONS 5 10 mA VCE = 5 V, IB = 0, IF = 1 mA mA VCE = 5 V, IB = 0, IF = 2 mA mA VCE = 5 V, IB = 0, IF = 2 mA 4N47BU 4N48BU 4N49BU On State Collector Current -55C 4N47BU 4N48BU 4N49BU 4N47BU 4N48BU 4N49BU On State Collector Current +100C SYMBOL MIN IC(ON) 0.5 1.0 2.0 IC(ON) IC(ON) TYP 0.7 1.4 2.8 0.5 1.0 2.0 Off State Collector Current +25C IC(OFF) 100 nA VCE = 20 V, IB = 0, IF = 0 mA Off State Collector Current +100°C IC(OFF) 100 A VCE = 20 V, IB = 0, IF = 0 mA Collector-Emitter Saturation Voltage 4N47BU 0.3 4N48BU VCE(SAT) 0.3 4N49BU RI-O Input to Output Capacitance 4N47BU 4N48BU 4N49BU Rise Time/ Fall Time 4N47BU Photodiode Operation 4N48BU 10 IC = 2 mA, IB = 0, IF = 2 mA VIN-OUT = 1 kV 1 f = 1 MHz, VIN-OUT = 1 kV 1 CI-O 5 pF tr / tf 20 25 25 s VCC = 10 V, IF = 10 mA, RL = 100 s VCC = 10 V, IF = 10 mA, RL = 100 0.85 0.85 4N49BU 0.85 NOTES: 1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together. 2. This parameter measured using pulse techniques tw =100 s, duty cycle 1%. RECOMMENDED OPERATING CONDITIONS: PARAMETER SYMBOL MIN MAX Input Current, Low Level IFL 0 100 A Input Current, High Level IFH 2 10 mA VCE 5 10 V Supply Voltage UNITS SELECTION GUIDE MICROPAC PART NUMBER 66138-017 66138-018 66138-019 66138-617 66138-618 66138-619 66138-717 66138-718 66138-719 66138-817 66138-818 66138-819 66138-317 66138-318 66138-319 INDUSTRY PART NUMBER 4N47BU 4N48BU 4N49BU JAN4N47BU JAN4N48BU JAN4N49BU JANTX4N47BU JANTX4N48BU JANTX4N49BU JANTXV4N47BU JANTXV4N48BU JANTXV4N49BU JANS4N47BU JANS4N48BU JANS4N49BU 2 IC = 1 mA, IB = 0, IF = 2 mA 11 t r / tf NOTE IC = 0.5 mA, IB = 0, IF = 2 mA V 0.3 Input to Output Resistance Rise Time/ Fall Time Phototransistor Operation NOTE TA = 25C Unless otherwise specified COUPLED CHARACTERISTICS PARAMETER On State Collector Current TYP PART DESCRIPTION Commercial Commercial Commercial JAN Screened JAN Screened JAN Screened JANTX Screened JANTX Screened JANTX Screened JANTXV Screened JANTXV Screened JANTXV Screened JANS Screened JANS Screened JANS Screened Micropac Industries cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. Micropac reserves the right to make changes at any time in order to improve design and to supply the best product possible. MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E.Walnut St., Garland, TX 75040 (972)272-3571 Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM