IXTK 62N25 High Current MegaMOSTMFET VDSS ID25 = 250 V = 62 A Ω = 35 mΩ RDS(on) N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 62 248 62 A A A EAR EAS TC = 25°C TC = 25°C 45 1.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC 390 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C = 25°C TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight TO-264 0.7/6 Nm/lb.in. 10 g TO-264 G D (TAB) D S G = Gate S = Source D = Drain Tab = Drain Features • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • International standard package • Fast switching times Applications Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS V GS = 0 V, ID = 1 mA 250 VGS(th) V DS = VGS, ID = 250 µA IGSS V GS = ±20 V DC, VDS = 0 IDSS V DS = VDSS V GS = 0 V RDS(on) V GS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 ms, duty cycle d ≤ 2% 2.0 TJ = 25°C TJ = 125°C V • • • Motor controls DC choppers Switched-mode power supplies Advantages 4.0 V ±100 nA • 50 µA 2 mA • • Easy to mount with one screw (isolated mounting screw hole) Space savings High power density 35 mΩ DS98877D(05/04) IXTK 62N25 Symbol Test Conditions (T J = 25°C unless otherwise specified) gfs Characteristic values Min. Typ. Max. VDS = 10 V; ID = 0.5 ID25, pulse test 35 Ciss S 5400 pF 1100 pF C rss 400 pF td(on) 30 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 47 tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 td(off) RG = 1.5 Ω (External) tf ns ns 15 ns 240 QG(on) QGS 25 115 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 QGD nC 40 nC 120 nC 0.30 K/W RthJC RthCK 0.15 Source-Drain Diode K/W Ratings and Characteristics (TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr IF = 30A, -di/dt = 100 A/µs, VR = 100V Qrr 62 A 248 A 1.5 V 360 ns 6 µC TO-264 Outline Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Note: IXTK62N25 MOSFET will be supplied in either package outline at the discretion of the vendor. TO-264 Alternate Outline Note: Leads and tab are solder IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,306,728 B1 6,534,343 6,259,123 B1 6,404,065 B1 6,583,505 6,683,344 6,710,405B2 IXTK 62N25 Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 210 70 VGS = 10V 8V 7V 60 180 150 I D - Amperes 50 I D - Amperes VGS = 10V 9V 8V 40 30 6V 120 7V 90 20 60 10 30 6V 5V 0 5V 0 0 0.5 1 1.5 2 2.5 0 1 2 3 V D S - Volts Fig. 3. Output Characteristics @ 125 Deg. C 70 7 8 9 10 VGS = 10V 2.4 2.2 R D S (on) - Normalized I D - Amperes 6 2.6 50 6V 40 30 20 5V 2 1.8 I D = 62A 1.6 1.4 I D = 31A 1.2 1 0.8 10 0.6 0 0.4 0 1 2 3 4 5 -50 -25 V D S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to ID25 Value vs. ID Fig. 6. Drain Current vs. Case Tem perature 70 3 2.8 VGS = 10V 60 2.6 2.4 50 TJ = 125ºC 2.2 I D - Amperes R D S (on) - Normalized 5 V D S - Volts Fig. 4. RDS(on) Norm alized to ID25 Value vs. Junction Tem perature VGS = 10V 8V 7V 60 4 2 1.8 1.6 1.4 40 30 20 TJ = 25ºC 1.2 10 1 0.8 0 0 30 60 90 120 I D - Amperes 150 180 210 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTK 62N25 Fig. 8. Transconductance Fig. 7. Input Adm ittance 100 150 90 80 90 60 60 50 40 30 TJ = 125ºC 25ºC -40ºC 30 TJ = -40ºC 25ºC 125ºC 70 g f s - Siemens I D - Amperes 120 20 10 0 0 3.5 4.5 5.5 6.5 7.5 0 30 60 V G S - Volts Fig. 9. Source Current vs. Source-ToDrain Voltage 120 150 180 Fig. 10. Gate Charge 10 180 VDS = 125V I D = 31A I G = 10mA 9 150 8 7 120 VG S - Volts I S - Amperes 90 I D - Amperes 90 60 6 5 4 3 TJ = 125ºC 2 30 TJ = 25ºC 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 50 100 150 200 250 Q G - nanoCoulombs V S D - Volts Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 R DS(on) Limit C iss I D - Amperes Capacitance - pF f = 1MHz 1000 C oss 25µs 100 100µs 1ms 10ms 10 DC C rss T J = 150 º C T C = 25 º C 1 100 0 5 10 15 20 25 V D S - Volts 30 35 1 40 10 V D S - Volts 100 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,306,728 B1 6,534,343 6,259,123 B1 6,404,065 B1 6,583,505 6,683,344 6,710,405B2 IXTK 62N25 Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce R (th) J C - (ºC/W) 1. 0 0 0. 1 0 0. 0 1 1 10 10 0 Puls e W idth - millis ec onds 10 0 0