Advanced Technical Information PolarHVTM Power MOSFET IXTC 26N50P VDSS = 500 V = 13 A ID25 Ω RDS(on) = 260 mΩ Electrically Isolated Tab, N-Channel Enhancement Mode, Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 13 A IDM TC = 25°C, pulse width limited by TJM 78 A IAR TC = 25°C 26 A EAR TC = 25°C 40 mJ EAS TC = 25°C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω 10 V/ns PD TC = 25°C 100 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS, t = 1, leads-to-tab FC Mounting Force 2500 V~ 11..65/2.5..15 N/lb 2 g Weight ISOPLUS220TM (IXTC) E153432 G VDSS VGS = 0 V, ID = 250 µA 500 VGS(th) VDS = VGS, ID = 250µA 2.5 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved TJ = 125°C V 5.0 V ±100 nA 25 250 µA µA 260 mΩ Isolated Tab D = Drain Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) Applications z DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies DC choppers z Characteristic Values Min. Typ. Max. S G = Gate S = Source z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) D AC motor control Advantages z Easy assembly z Space savings z High power density DS99227(10/04) IXTC 26N50P Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. VDS= 10 V; ID = T , pulse test 20 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 28 S 3600 pF 380 pF 48 pF 20 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = IT 25 ns td(off) RG = 4 Ω (External) 58 ns tf 20 ns Qg(on) 96 nC 20 nC 45 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = IT Qgd 1.25 K/W RthJC RthCK 0.21 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. typ. Max. Symbol Test Conditions IS VGS = 0 V 26 A ISM Repetitive 78 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = 25 A -di/dt = 100 A/µs VR = 100 V QRM ISOPLUS220 Outline 400 ns 5.0 µC Note: Test Current IT = 13A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXTC 26N50P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25º C 30 60 VGS = 10V 27 VGS = 10V 7V 6V 24 I D - Amperes 21 I D - Amperes 7V 50 18 15 5.5V 12 9 40 6V 30 20 5.5V 5V 6 3 10 5V 4.5V 0 0 0 1 2 3 4 5 6 7 0 8 3 6 9 V D S - Volts Fig. 3. Output Characteristics @ 125ºC 18 21 24 27 30 3.1 VGS = 10V 27 2.8 21 R D S ( o n ) - Normalized 7V 6V 24 I D - Amperes 15 V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 30 5.5V 18 15 12 5V 9 6 VGS = 10V 2.5 2.2 1.9 I D = 26A 1.6 I D = 13A 1.3 1 0.7 4.5V 3 0 0.4 0 2 4 6 8 10 12 14 16 18 20 -50 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to Fig. 6. Drain Current vs. Case Tem perature 150 27 3.4 24 VGS = 10V 3 -25 V D S - Volts 0.5 ID25 Value vs. ID 21 TJ = 125ºC 2.6 I D - Amperes R D S ( o n ) - Normalized 12 2.2 1.8 1.4 TJ = 25ºC 1 0.6 18 15 12 9 6 3 0 0 5 10 15 20 25 30 35 40 45 I D - Amperes © 2004 IXYS All rights reserved 50 55 60 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTC 26N50P Fig. 8. Transconductance Fig. 7. Input Adm ittance 40 55 50 35 g f s - Siemens I D - Amperes 30 25 20 15 TJ = 125ºC 25ºC -40ºC 10 45 TJ = -40ºC 40 25ºC 125ºC 35 30 25 20 15 10 5 5 0 0 3.5 4 4.5 5 5.5 6 6.5 0 5 10 15 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 25 30 35 40 45 90 100 Fig. 10. Gate Charge 10 70 60 VG S - Volts 50 I S - Amperes 20 I D - Amperes 40 30 TJ = 125ºC 20 9 VDS = 250V 8 I D = 13A 7 I G = 10mA 6 5 4 3 2 TJ = 25ºC 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 0 V S D - Volts 10 20 30 40 50 60 70 80 Q G - nanoCoulombs Fig. 12. For w ar d-Bias Safe Ope r ating Ar e a Fig. 11. Capacitance 100 10000 25µs C iss I D - Amperes Capacitance - picoFarads R D S(on) Lim it 1000 C oss 100µs 10 1m s 10m s 1 100 DC TJ = 150ºC C rss f = 1MHz TC = 25ºC 10 0.1 0 5 10 15 20 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - V olts 1000 IXTC 26N50P Fig. 13. Maximum Transient Therm al Resistance R ( t h ) J C - ºC / W 10.00 1.00 0.10 0.01 0.1 1 10 Pulse Width - milliseconds © 2004 IXYS All rights reserved 100 1000