SD210 / SD214

SD210 / SD214
SD210DE / SD214DE series N-Channel Enhancement Mode DMOS Lateral Switches
Description: The SD210DE & SD214DE are enhancement‐mode MOSFETs designed for high speed low‐glitch switching in audio, video and high‐
frequency applications. The SD214DE is normally used for ±10V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra‐fast switching speeds. These MOSFETs do not have a gate protection Zener diode which results in lower gate leakage and ± voltage capability from gate to substrate. A poly‐silicon gate is featured for manufacturing reliability. See SD5000 and SD54000 series for quad configurations. For zener protected versions see SD211DE / SST211 series Features: ƒ
Ultra‐High Speed Switching—tON: 1ns ƒ
Ultra‐Low Reverse Capacitance: 0.2pF ƒ
Low Guaranteed RDS @5V ƒ
Low Turn‐On Threshold Voltage (1.5V max) ƒ
N‐Channel Enhancement Mode Availability: SD210DE – TO‐72 hermetic package, ‐55°C to +125°C SD214DE – TO‐72 hermetic package, ‐55°C to +125°C SD210DE / SD214DE ‐ Bare die form Contact Micross for full pinout & package dimensions Pinout: MAXIMUM RATINGS Gate‐Drain, Gate‐Source Voltage Gate‐Substrate Voltage Drain‐Source Voltage Source‐Drain Voltage Drain ‐Substrate Voltage Source‐Substrate Voltage LIMIT SD210DE ±40V ±30V 30V 10V 30V 15V Benefits: ƒ
High‐Speed System Performance ƒ
Low Insertion Loss at High Frequencies ƒ
Low Transfer Signal Loss ƒ
Single Supply Operation & Simple Driver Requirement SD210 / SD214 Applications: ƒ
Fast Analog Switching ƒ
Fast Sample & Holds ƒ
Pixel‐Rate Switching ƒ
DAC Deglitchers ƒ
High‐Speed Driver MAXIMUM RATINGS LIMIT UNIT (Continued) Drain Current 50 mA Lead Temperature (1/16” from ease, 10s) 300 °C Storage Temperature ‐65 to 150 °C Operating Junction Temperature ‐55 to 125 °C Power Dissipation Derate 3mW/C° above 25°C 300 mW LIMITS TEST CONDITIONS TYP UNIT SD210DE SD214DE MIN MAX MIN MAX VGS = VBS = 0V, ID = 10µA 35 30 ‐ ‐ ‐ VGS = VBS = ‐5V, ID = 10nA 30 10 ‐ 20 ‐ VGD = VBD = ‐5V, IS = 10nA 22 10 ‐ 20 ‐ V VGB = 0V, ID = 10nA 35 15 ‐ 25 ‐ Source Open VGB = 0V, IS = 10µA 35 15 ‐ 25 ‐ Drain Open VGS = VBS = ‐5V VDS = 10V 0.4 ‐ 10 ‐ ‐ nA VDS = 20V 0.9 ‐ ‐ ‐ 10 VGD = VBD = ‐5V VSD = 10V 0.5 ‐ 10 ‐ ‐ VSD = 20V 0.8 ‐ ‐ ‐ 10 VDB = VSB = 0V , VGB = ±4 0V 0.001 ‐ 0.1 0.1 V - SD214DE ±40V ±30V 20V 20V 25V 25V Click To Buy
ELECTRICAL SPECIFICATION TA = 25°C unless otherwise noted DRAIN‐SOURCE BREAKDOWN VOLTAGE SOURCE‐DRAIN BREAKDOWN VOLTAGE DRAIN‐SUBSTRATE BREAKDOWN VOLTAGE SOURCE‐SUBSTRATE BREAKDOWN VOLTAGE DRAIN‐SOURCE LEAKAGE SOURCE‐DRAIN LEAKAGE SYMBOL V(BR)DS V(BR)SD V(BR)DBO V(BR)SBO IDS(off) ISD(off) GATE LEAKAGE IGBS THRESHOLD VOLTAGE VGS(th) DRAIN‐SOURCE‐ON RESISTANCE RDS(on) FORWARD TRANSCONDUCTANCE gfs gos GATE NODE CAPACITANCE DRAIN NODE CAPACITANCE SOURCE NODE CAPACITANCE REVERSE TRANSFER CAPACITANCE TURN‐ON TIME C(GS+GD+GB) C(GD+GB) C(GS+SB) Crss tD(on) tr tD(off) tf TURN‐OFF TIME VDS = VGS , ID = 1µA, VSB = 0V VSB = 0V, ID = 1mA VGS = 5V VGS = 10V VGS = 15V VGS = 20V VGS = 25V VDS = 10V , VSB = 0V ID = 20mA, f = 1kHz VDS = 10V , f = 1MHz VGS = VBS = ‐15V VSB = 0V, VIN 0 to 5V, RG = 25Ω, VDD = 5V RL = 680Ω 0.8 0.5 1.5 0.1 1.5 58 38 30 26 24 11 0.9 2.5 1.1 3.7 0.2 0.5 0.6 2 6 ‐ ‐ ‐ ‐ ‐ 10 ‐ ‐ ‐ ‐ ‐ ‐ ‐ ‐ ‐ 70 45 ‐ ‐ ‐ ‐ ‐ 3.5 1.5 5.5 0.5 1 1 ‐ ‐ ‐ ‐ ‐ ‐ ‐ 10 ‐ ‐ ‐ ‐ ‐ ‐ ‐ ‐ ‐ 70 45 ‐ ‐ ‐ ‐ ‐ 3.5 1.5 5.5 0.5 1 1 ‐ ‐ This is trial version
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