GBPC35 SEMICONDUCTOR RoHS RoHS Nell High Power Products Glass Passivated Single-Phase Bridge Rectifier, 35A GBPC3506 Thru GBPC3516 FEATURES UL recognition file number E320098 Universal 3-way terminals: snap-on, wire wrap-around, or PCB mounting Typical IR less than 1.0 µA GBPC-W GBPC ~ High surge current capability + Low thermal resistance Solder dip 260°C, 40s - ~ Compliant to RoHS + ~ Glass passivated chips TYPICAL APPLICATIONS - General purpose use in AC/DC bridge full wave rectification for power supply, home appliances, ~ office equipment, industrial automation applications. MECHANICAL DATA Case: GBPC, GBPC-W Epoxy meets UL 94 V-O flammability rating Terminals: Nickel plated on faston lugs or silver plated on wire leads,solderable per J-STD-002 and JESD22-B102. Suffix letter “W” added to indicate wire leads(e.g. GBPC3506W). Polarity: As marked,positive lead by belevled corner Mounting Torque: 20 inches-lbs. max. (M5 screw) Weight: 14g (0.49 ozs) - ~ ~ + GBPC GBPC-W 28.6 28.6 18.1 18.1 18.1 Ø5.3 28.6 11.4 28.6 14.3 16.6 12.2 Ø5.3 16.6 1.0(x4) 0.8 6.35 Ø2.4 32~34 20 7.7 All dimensions in millimeters www.nellsemi.com Page 1 of 4 7.7 RoHS RoHS GBPC35 SEMICONDUCTOR Nell High Power Products PRIMARY CHARACTERRISTICS IF(AV) 35A V RRM 600V to 1600V I FSM 400A IR 5 µA VF 1.1V/1.2V T J max. 150ºC MAXIMUM RATINGS (TA = 25°C unless otherwise noted) GBPC35 PARAMETER UNIT SYMBOL 06 08 10 12 14 16 Maximum repetitive peak reverse voltage V RRM 600 800 1000 1200 1400 1600 V Maximum RMS voltage V RMS 420 560 700 840 980 1120 V Maximum DC blocking voltage V DC 600 800 1000 1200 1400 1600 V Maximum average forward rectified output current @ Tc = 85°C (Fig.1) I F(AV) 35 A I FSM 400 A I 2t 660 A 2s Peak forward surge current single sine-wave superimposed on rated load Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing RMS isolation voltage from case to leads Operating junction storage temperature range V ISO 2500 V T J ,T STG -55 to 150 ºC ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER Maximum instantaneous forward drop per diode TEST CONDITIONS SYMBOL I F = 17.5A VF Maximum reverse DC current at rated DC blocking T A = 25°C voltage per diode T A = 150°C Typical junction capacitance per diode 4V, 1MHz GBPC35 06 08 12 10 UNIT 14 1.1 16 1.2 V 5 IR µA 500 CJ pF 300 THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER GBPC35 SYMBOL 06 Typical thermal resistance R θJC (1) 08 10 12 1.4 UNIT 14 16 °C/W Notes (1) With heatsink (2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with M5 screw www.nellsemi.com Page 2 of 4 GBPC35 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 Maximum output rectified current Fig.2 Maximum output rectified current 40 R thS-A = 0.5°C/W Bridges mounted on 9.5x3.5x4.6” (22.9x8.9x11.7cm) AL. Finned Plate 35 30 25 20 15 10 5 0 35 Average forward current (A) Average forward current (A) 40 30 25 20 15 10 5 60 H z Resistive or lnductive Load 0 20 40 60 80 100 120 140 0 160 60 H z Resistive or lnductive Load 0 Case temperature(°C) 30 40 50 60 70 80 90 100 Fig.4 Maximum non-repetitive peak forward surge current per diode 80 1000 Peak forward surge current (A) Average power dissipation of bridge (W) 20 Ambient temperature(°C) Fig.3 Maximum power dissipation 70 Capacitive Load 60 50 T J = T J max. 40 Resistive or lnductive Load 30 20 10 0 10 T J = T J max. 0.5 Single Sine-Wave 100 1.0 Cycle 10 0 10 20 30 1 40 Average output current (A) www.nellsemi.com 10 Number of cycles at 60 Hz Page 3 of 4 100 GBPC35 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.5 Maximum instantaneous forward characteristics per leg Fig.6 Typical reverse leakage characteristics per leg lnstantaneous reverse leakage (μA) lnstantaneous forward current (A) 100 10 T J = 25°C 1 0.1 0.01 0.4 0.6 0.8 1 1.4 1.2 T J = 125°C 100 10 1 0.01 1.6 25°C °C TT J = 25 0.1 0 Instantaneous forward voltage (V) 40 60 80 100 Instantaneous forward voltage (%) Fig.7 Typical junction characteristics per leg Fig.6 Typical reverse leakage characteristics per leg 1,000 Transient thermal lmpedance (°C/W) 1,000 Junction capacitance (pF) 20 T J = 25°C f = 1.0 MH V sing = 50MVp-p 100 10 1 10 100 Reverse voltage (V) www.nellsemi.com 25°C °C TT J == 25 100 10 1 0.01 0.1 1 10 Heating time, t (sec.) Page 4 of 4 100