GBPC35 SEMICONDUCTOR RoHS RoHS Nell High Power Products Glass Passivated Single-Phase Bridge Rectifier, 35A GBPC3506 Thru GBPC3516 FEATURES UL recognition file number E320098 Universal 3-way terminals: snap-on, wire wrap-around, or PCB mounting Typical IR less than 1.0 µA GBPC-W GBPC High surge current capability ~ Low thermal resistance Solder dip 260°C, 40s - ~ Compliant to RoHS + Glass passivated chips + - TYPICAL APPLICATIONS ~ ~ General purpose use in AC/DC bridge full wave rectification for power supply, home appliances, office equipment, industrial automation applications. MECHANICAL DATA Case: GBPC, GBPC-W Epoxy meets UL 94 V-O flammability rating Terminals: Nickel plated on faston lugs or silver plated on wire leads,solderable per J-STD-002 and JESD22-B102. Suffix letter “W” added to indicate wire leads(e.g. GBPC3506W). Polarity: As marked,positive lead by belevled corner Mounting Torque: 20 inches-lbs. max. (M5 screw) Weight: 14g (0.49 ozs) + ~ ~ - GBPC GBPC-W Hole for #10 Screw 0.220 (5.59) DIA. 0.200 (5.08) 1.135 (28.8) 1.115 (28.3) 0.732 (18.6) 0.692 (17.6) 1.135 (28.8) 1.115 (28.3) 0.24 (6.0) 0.18 (4.6) 0.042 (1.07) 0.038 (0.97) DIA. 0.24 (6.0) 0.18 (4.6) 0.732 (18.6) 0.692 (17.6) 0.470 (11.9) 0.430 (10.9) 0.50 (12.7) 0.44 (11.7) 1.25 (31.8) MIN. 0.672 (17.1) 0.632 (16.1) AC 0.582 (14.8) 0.542 (13.8) 0.034 (0.86) 0.030 (0.76) 0.732 (18.6) 0.692 (17.6) 0.034 (0.86) 0.030 (0.76) 0.310 (7.62) 0.290 (7.36) Page 1 of 4 1.135 (28.8) 1.115 (28.3) 0.672 (17.1) 0.632 (16.1) 1.135 (28.8) 1.115 (28.3) 0.094 (2.4) DIA. 0.310 (7.62) 0.290 (7.36) www.nellsemi.com Hole for #10 Screw 0.220 (5.59) DIA. 0.200 (5.08) 0.25 (6.35) 0.840 (21.3) 0.740 (18.8) GBPC35 SEMICONDUCTOR RoHS RoHS Nell High Power Products PRIMARY CHARACTERRISTICS IF(AV) 35A V RRM 600V to 1600V I FSM 400A IR 5 µA VF 1.1V T J max. 150ºC MAXIMUM RATINGS (TA = 25°C unless otherwise noted) GBPC35 PARAMETER UNIT SYMBOL 06 08 10 12 16 Maximum repetitive peak reverse voltage V RRM 600 800 1000 1200 1600 V Maximum RMS voltage V RMS 420 560 700 840 1120 V Maximum DC blocking voltage V DC 600 800 1000 1200 1600 Maximum average forward rectified output current (Fig.1) I F(AV) 35 A I FSM 400 A Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing I 2t 660 A 2s RMS isolation voltage from case to leads V ISO 2500 V T J ,T STG -55 to 150 ºC Peak forward surge current single sine-wave superimposed on rated load Operating junction storage temperature range V ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) TEST CONDITIONS SYMBOL Maximum instantaneous forward drop per diode I F = 17.5A VF Maximum reverse DC current at rated DC blocking T A = 25°C voltage per diode T A = 150°C PARAMETER Typical junction capacitance per diode 4V, 1MHz GBPC35 06 08 10 UNIT 12 16 1.1 V 5 IR µA 500 CJ pF 300 THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER GBPC35 SYMBOL 06 Typical thermal resistance R θJC (1) 08 10 1.4 UNIT 12 16 °C/W Notes (1) With heatsink (2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with M5 screw www.nellsemi.com Page 2 of 4 GBPC35 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 Maximum Output Rectified Current Fig.2 Maximum Output Rectified Current 40 Bridges Mounted on 9.5 x 3.5 x 4.6" (22.9 x 8.9 x 11.7 cm) AL. Finned Plate 35 30 Average Forward Current (A) Average Forward Current (A) 40 25 20 15 10 5 0 25 50 60 HZ Resistive or Inductive Load 30 25 20 15 10 5 60 HZ Resistive or Inductive Load 0 GBPC35 35 RthS-A = 0.5 °C/W 75 100 125 150 175 0 200 0 Case Temperature (℃) 10 20 30 40 50 60 70 80 90 100 Ambient Temperature (°C) Fig.4 Maximum Non-Repetitive Peak Forward Fig.3 Maximum Power Dissipation Surge Current Per Diode 1000 70 Peak Forward Surge Current (A) Average Power Dissipation of Bridge (W) 80 Capacitive Load 60 50 TJ = TJ max. 40 Resistive or Inductive Load 30 20 10 0 TJ = TJ max. 0.5 Single Sine-Wave 100 1.0 Cycle 10 0 10 20 30 40 10 Number of Cycles at 60 Hz Average Output Current (A) www.nellsemi.com 1 Page 3 of 4 100 GBPC35 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.5 Typical Instantaneous Forward Characteristics Per Leg Fig.6 Typical Reveres Leakage Characteristics Per Leg TJ = 25 °C Pulse Width = 300 µs 1% Duty Cycle 1 0.1 0.01 0.4 0.6 0.8 1 1.2 1.4 TJ = 125 °C 100 Current (µA) 10 Instantaneous Reverse Leakage Instantaneous Forward Current (A) 100 10 1 TJ = 25 °C 0.1 0.01 1.6 0 Instantaneous Forward Voltage (V) 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig.7 Typical Junction Capacitance Per Leg Fig.8 Typical Transient Thermal lmpedance Per Leg Transient Thermal lmpedance (°CW) (pF) Junction Capacitance (pF) 1,000 TJ = 25 °C f = 1.0 MH Vsig = 50MVp-p 100 10 1 10 100 Reverse Voltage (V) www.nellsemi.com 1,000 TJ = 25 °C f = 1.0 MHZ Vsig = 50MVp-p 100 10 1 0.01 0.1 1 10 t, Heating Time (sec.) Page 4 of 4 100