TIP35 (NPN) Series TIP36 (PNP) Series SEMICONDUCTOR RoHS RoHS Nell High Power Products 1.8 Φ3.2 ± 0,1 Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio h FE 2 4.0 max 20.0 min TO-3P(B) FEATURES 4.8±0.2 2.0±0.1 4.0 19.9±0.3 2.0 15.6±0.4 9.6 5.0 ±0 . 2 Complementary Silicon Power Transistor 25A/40~100V/125W 3 5.45±0.1 B C E 1 2 3 +0.2 1.05 -0.1 +0.2 0.65 -0.1 5.45±0.1 1.4 TO-3P package which can be installed to the heat sink with one screw Collector - Emitter Saturation Voltage: V CE(sat) = 1.8V dc (MAX.) @ I C = 15A Collector - Emitter Saturation Voltage: V CEO(sus) = 40V dc (Min.) - TIP35,TIP36 = 60V dc (Min.) - TIP35A,TIP36A = 80V dc (Min.) - TIP35B, TIP36B = 100V dc (Min.) - TIP35C, TIP36C DC Current Gain h FE = 25 (Min.) @ I c = 1.5A High Current Gain - Bandwidth product f T = 3.0 MHz (Min.) @ I c =1.0A All dimensions in millimeters C C B B APPLICATIONS E Audio amplifier General purpose switching and amplifier E TIP35(NPN) TIP36(PNP) ABSOLUTE MAXIMUM RATINGS (TC = 25°C) VALUE SYMBOL PARAMETER TIP35 TIP36 TIP35A TIP36A TIP35B TIP35C TIP36B TIP36C VCBO Collector to base voltage (I E = 0) 40 60 80 100 V CEO Collector to emitter voltage (I B = 0) 40 60 80 100 V EBO IC I CM Collector current 25 Collector peak current (t p < 0.3mS) 40 Base current PC Collector power dissipation (Derate above 25°C) V 5 Emitter to base voltage (I C = 0) IB UNIT A 5 @T C = 25°C 125 (1.0) @T A = 25°C 3.5 (0.028) Tj Junction temperature 150 T stg Storage temperature -65 to 150 W(W/°C) ºC E Unclamped inductive load energy (Note 1) Note: 1. This rating is based on the capability of the transistor to operate safely is a circuit of: L = 20mH, I B(on) = 0.4A, R BE = 100Ω, V BE(off) = 0, R S = 0.1Ω, V CC = 20V www.nellsemi.com Page 1 of 3 90 mJ TIP35 (NPN) Series TIP36 (PNP) Series SEMICONDUCTOR RoHS RoHS Nell High Power Products THERMAL CHARACTERISTICS (TC = 25°C) PARAMETER SYMBOL Rth(j-c) Maximum thermal resistance, junction to case Rth(j-a) Maximum thermal resistance, junction to ambient VALUE UNIT 1.0 ºC/W 36.0 ºC/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) CONDITIONS PARAMETER SYMBOL MIN MAX Off Characteristics V CEO(SUS) ICEO IEBO I CES Collector to emitter sustaining voltage (Note 1) l C = 30mA, I B =0 Collector cutoff current 40 60 TIP35B,TIP36B 80 TIP35C,TIP36C 100 V CE = 30V, I B = 0 TIP35,TIP36 TIP35A,TIP36A V CE = 60V, l B = 0 TIP35B,TIP36B TIP35C,TIP36C Collector cutoff current Emitter cutoff current TIP35,TIP36 TIP35A,TIP36A V 1.0 mA V EB = 5V, I C = 0 1.0 V CE = 40V, V EB = 0 TIP35,TIP36 0.7 V CE = 60V, V EB = 0 TIP35A,TIP36A 0.7 V CE = 80V, V EB = 0 TIP35B,TIP36B 0.7 V CE = 100V, V EB = 0 TIP35C,TIP36C 0.7 mA On Characteristics h FE V CE(sat) Forward current transfer ratio (DC current gain) V CE = 4V , I C = 1.5A 25 V CE = 4V, I C = 15A 15 l C = 15A, l B = 1.5A Collector to emitter saturation voltage (Note1) V BE(sat) Base to emitter saturation voltage (Note1) V BE(on) Base to emitter voltage (Note1) 75 1.8 l C = 25A, l B = 5A 4.0 l C = 15A, l B = 1.5A 2.5 l C = 15A, V CE = 4V 2.0 l C = 25A, V CE = 4V 4.0 V Dynamic Characteristics fT Current gain - Bandwidth product (note 2) l C = 1.0A, V CE = 10V, f test = 1MHz 3.0 h fe Small signal current gain l C = 1.0A, V CE = 10V, f = 1KHz 20 Note 1. Pulsed : Pulse duration ≤ 300 µS, duty cycle ≤ 2 . 0 %. Note 2. f T = |h fe | • f TEST Note 3. For PNP type voltage and current are negative. www.nellsemi.com Page 2 of 3 MHZ TIP35 (NPN) Series TIP36 (PNP) Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 DC current gain for Fig.2 Turn-off time 10 V CE = 4V T J = 25°C 200 PNP NPN 5.0 ts 2.0 100 Time, t (µS) DC current gain, h FE 500 50 20 ts 1.0 0.5 tf PNP NPN 10 tf 0.2 5 0.1 0.2 0.5 1.0 2.0 10 5.0 0.1 0.3 50 20 0.5 1.0 Collector current, I C (A) 5.0 2.0 10 20 30 Collector Current, l C (A) Fig.4 Reverse biase safe operating area Fig.3 Turn-on time 40 3.0 Collector current (Amp.), I C I C /I B = 10 V CC = 30V T J = 25°C 1.0 V BE(OFF) = 2V 0.5 Time, t (µS) I C /I B = 10 I B1 = I b2 V CC = 30V T J = 25°C tr 0.2 0.1 PNP NPN td 0.05 0.02 0.3 0.5 5.0 2.0 1.0 10 30 TIP35C TIP36C 20 TIP35C TIP36C TIP35A TIP36A 10 TIP35 TIP36 0 20 30 10 20 30 40 50 60 70 80 Collector current, I C (A) Collector emitter , V CE (V) Fig.5 Active region safe operating area Fig.6 Power Derating 100 90 100 150 50 Power dissipation , P D (W) Collector-current ,I C (A) 300µs 20 1ms 10 5.0ms DC 5.0 Bonding Wire Limit Second Breakdown Limit Thermally Limit T C =25°C (Single Pulse) 2.0 1.0 TIP35.TIP36 0.5 TIP35A,TIP36A TIP35B,TIP36B TIP35C,TIP36C 0.2 0.1 1 2 5 10 20 100 75 50 25 0 50 100 0 Collector-emitter voltage (volts), V CE www.nellsemi.com 125 25 50 75 100 Temperature, T C (°C) Page 3 of 3 125 150