Order this document by TIP35A/D SEMICONDUCTOR TECHNICAL DATA !# " ! . . . for general–purpose power amplifier and switching applications. • • • • 25 A Collector Current Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain — hFE = 40 Typ @ 15 A High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 1.0 A, f = 1.0 MHz ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ v MAXIMUM RATINGS Symbol TIP35A TIP36A TIP35B TIP36B TIP35C TIP36C Unit *Motorola Preferred Device VCEO 60 V 80 V 100 V Vdc Collector–Base Voltage VCB 60 V 80 V 100 V Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current — Continuous Peak (1) IC 25 40 Adc 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 100 VOLTS 125 WATTS Base Current — Continuous IB 5.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 125 1.0 Watts W/_C TJ, Tstg – 65 to + 150 _C ESB 90 mJ Rating Collector–Emitter Voltage Operating and Storage Junction Temperature Range Unclamped Inductive Load THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Junction–To–Free–Air Thermal Resistance (1) Pulse Test: Pulse Width = 10 ms, Duty Cycle Symbol Max Unit RθJC 1.0 _C/W RθJA 35.7 _C/W CASE 340D–02 TO–218AC 10%. PD, POWER DISSIPATION (WATTS) 125 100 75 50 25 0 0 25 50 75 125 100 TC, CASE TEMPERATURE (°C) 150 175 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola, Inc. 1996 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 60 80 100 — — — — — 1.0 1.0 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 30 mA, IB = 0) VCEO(sus) TIP35A, TIP36A TIP35B, TIP36B TIP35C, TIP36C Collector–Emitter Cutoff Current (VCE = 30 V, IB = 0) (VCE = 60 V, IB = 0) Vdc ICEO mA TIP35A, TIP36A TIP35B, TIP35C, TIP36B, TIP36C Collector–Emitter Cutoff Current (VCE = Rated VCEO, VEB = 0) ICES — 0.7 mA Emitter–Base Cutoff Current (VEB = 5.0 V, IC = 0) IEBO — 1.0 mA 25 15 — 75 — — 1.8 4.0 — — 2.0 4.0 ON CHARACTERISTICS (1) DC Current Gain (IC = 1.5 A, VCE = 4.0 V) (IC = 15 A, VCE = 4.0 V) hFE — Collector–Emitter Saturation Voltage (IC = 15 A, IB = 1.5 A) (IC = 25 A, IB = 5.0 A) VCE(sat) Base–Emitter On Voltage (IC = 15 A, VCE = 4.0 V) (IC = 25 A, VCE = 4.0 V) VBE(on) Vdc Vdc DYNAMIC CHARACTERISTICS Small–Signal Current Gain (IC = 1.0 A, VCE = 10 V, f = 1.0 kHz) hfe 25 — — Current–Gain — Bandwidth Product (IC = 1.0 A, VCE = 10 V, f = 1.0 MHz) fT 3.0 — MHz (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%. VCC TURN–ON TIME RL + 2.0 V 0 3.0 TO SCOPE tr ≤ 20 ns 10 RB tr ≤ 20 ns – 30 V –11.0 V 2.0 10 TO 100 µS DUTY CYCLE ≈ 2.0% RL + 9.0 V 3.0 TO SCOPE tr ≤ 20 ns 10 RB VBB + 4.0 V FOR CURVES OF FIGURES 3 & 4, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN, REVERSE ALL POLARITIES. Figure 2. Switching Time Equivalent Test Circuits 2 0.3 tr 0.2 0.1 –11.0 V tr ≤ 20 ns 10 to 100 µs DUTY CYCLE ≈ 2.0% 0.7 0.5 – 30 V t, TIME ( µs) VCC TURN–OFF TIME 0 TJ = 25°C IC/IB = 10 VCC = 30 V VBE(off) = 2 V 1.0 td (PNP) (NPN) 0.07 0.05 0.03 0.02 0.3 0.5 0.7 1.0 5.0 7.0 10 2.0 3.0 IC, COLLECTOR CURRENT (AMPERES) 20 Figure 3. Turn–On Time Motorola Bipolar Power Transistor Device Data 30 1000 (PNP) (NPN) 3.0 ts t, TIME ( µs) 2.0 500 200 TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 hFE , DC CURRENT GAIN 10 7.0 5.0 ts 1.0 0.7 0.5 tf 0.3 tf 0.2 VCE = 4.0 V TJ = 25°C 100 50 20 10 PNP NPN 5.0 2.0 0.1 0.3 0.5 0.7 1.0 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 0.1 30 0.2 100 IC, COLLECTOR CURRENT (AMPS) FORWARD BIAS w 300 µs 50 30 20 TC = 25°C 1.0 ms 10 10 ms 5.0 2.0 dc SECONDARY BREAKDOWN THERMAL LIMIT BONDING WIRE LIMIT 1.0 0.5 0.3 0.2 0 REVERSE BIAS TIP35A, 36A TIP35B, 36B TIP35C, 36C 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 1.0 Figure 6. Maximum Rated Forward Bias Safe Operating Area 40 IC, COLLECTOR CURRENT (AMPS) For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage–current conditions during reverse biased turn–off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 7 gives RBSOA characteristics. 100 50 Figure 5. DC Current Gain Figure 4. Turn–Off Time There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMPS) TJ ≤ 100°C 30 25 20 TIP35C TIP36C 15 TIP35B TIP36B 10 TIP35A TIP36A 5.0 0 0 10 40 60 80 20 30 50 70 90 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 100 Figure 7. Maximum Rated Forward Bias Safe Operating Area Motorola Bipolar Power Transistor Device Data 3 TEST CIRCUIT VCE MONITOR L1 (SEE NOTE A) RBB1 MJE180 TUT 20 INPUT L2 (SEE NOTE A) 50 RBB2 = 100 50 – VCC = 10 V + IC MONITOR VBB2 = 0 – RS = 0.1 Ω VBB1 = 10 V + VOLTAGE AND CURRENT WAVEFORMS tw = 6.0 ms (SEE NOTE B) 5.0 V INPUT VOLTAGE 0 100 ms COLLECTOR CURRENT 0 – 3.0 A 0 –10 V COLLECTOR VOLTAGE V(BR)CER NOTES: A. L1 and L2 are 10 mH, 0.11 Ω, Chicago Standard Transformer Corporation C–2688, or equivalent. B. Input pulse width is increased until ICM = – 3.0 A. C. For NPN, reverse all polarities. Figure 8. Inductive Load Switching 4 Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS C Q B U S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. E 4 DIM A B C D E G H J K L Q S U V A L 1 K 2 3 D J H V MILLIMETERS MIN MAX ––– 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF ––– 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF STYLE 1: PIN 1. 2. 3. 4. G INCHES MIN MAX ––– 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF ––– 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 BASE COLLECTOR EMITTER COLLECTOR CASE 340D–02 ISSUE B Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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