MTP50M

RoHS
MTP50M RoHS
SEMICONDUCTOR
Nell High Power Products
Glass Passivated Three-Phase Bridge Rectifier, 50A
MTP5008M Thru MTP5018M
38.0
5.0 (TYP.)
20.0±0.50
6.50
40.0
34.0
6.5
19.0±0.50
19.0±0.50
60.0
66.0
80.0
3.0
14.3
21.3
5-M5*12
Aluminum base plate
All dimensions in millimeters
FEATURES
UL recognition file number E320098
Typical IR less than 2.0 µA
Glass passivated chips
High surge current capability
Low thermal resistance
Compliant to RoHS
Isolation voltage up to 2500V
Unique epoxy molding body with heatsink plate
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for big power supply, field supply for DC motor,
industrial automation applications.
PRIMARY CHARACTERRISTICS
ADVANTAGE
International standard package
Epoxy meets UL 94 V-O flammability rating
Small volume, light weight
Small thermal resistance
Weight: 110g (3.9 ozs)
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Page 1 of 3
IF(AV)
50A
V RRM
800V to 1800V
I FSM
500A
IR
5 µA
VF
1.3V
T J max.
150ºC
RoHS
MTP50M RoHS
SEMICONDUCTOR
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted)
MTP50..M
PARAMETER
UNIT
SYMBOL
08
10
12
16
18
Maximum repetitive peak reverse voltage
V RRM
800
1000
1200
1600
1800
V
Peak reverse non-repetitive voltage
V RSM
900
1100
1300
1700
1900
V
V DC
800
1000
1200
1600
1800
V
Maximum DC blocking voltage
Maximum average forward rectified output current
Peak forward surge current single sine-wave superimposed on
I F(AV)
50
A
I FSM
500
A
I 2t
1250
A 2s
V ISO
2500
V
TJ
-40 to 150
ºC
T STG
-40 to 150
ºC
rated load
Rating (non-repetitive, for t greater than 1 ms and less than 10 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
Storage temperature range
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
MTP50..M
TEST
CONDITIONS
SYMBOL
I F = 50A
VF
Maximum instantaneous forward drop per diode
Maximum reverse DC current at rated DC blocking
08
T A = 25°C
voltage per diod
10
12
UNIT
16
18
1.3
V
5
IR
T A = 150°C
µA
3000
THERMAL AND MECHANICAL (TA = 25°C unless otherwise noted)
MTP50..M
TEST CONDITIONS
PARAMETER
Typical thermal resistance
SYMBOL
junction to case
Single-side heat dissipation, sine
half wave
Mounting
torque
± 10 %
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
to heatsink M6
to terminals M5
UNIT
08
10
R θJC (1)
0.20
(1) With heatsink, single side heat dissipation, half sine wave.
(2) M6 screw.
Ordering Information Tabel
1
50
16
M
2
3
4
1
-
Module type: "MTP" for 3Φ Bridge
2
-
lF(AV) rating : "50" for 50A
3
-
Voltage code : code x 100 = V RRM
4
-
Package type : "M" for Epoxy molded package
Page 2 of 3
°C/W
Nm
Notes
MTP
18
4
110
Device code
16
4
Approximate weight
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12
g
RoHS
MTP50M RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.1 Forward characteristic
T ransient thermal impedance (°C/W)
Fig.2 Thermal lmpedance (junction to case)
Forward voltage drop (V)
3.5
T J = 25°C
3.0
2.5
2.0
1.5
1.0
0.5
10
100
1000
0.25
0.20
0.15
0.10
0.05
0
0.001
0.01
0.1
Forward current (A)
10
1
Time (s)
Fig.4 Case temperature vs. on-state average current
Fig.3 Power dissipation vs. output current
250
Output current (A)
Power dissipation (W)
75
200
150
100
25
50
0
0
0
10
20
30
40
50
60
0
20
40
60
80
100
120
Output current (A)
Case temperature (°C)
Fig.5 Forward surge current vs cycle
Fig.6 I 2 t characteristic
600
1.50
500
1.25
400
1.00
I 2 t ( KA 2 S )
Forward surge current (A)
50
300
0.50
100
0.25
1
10
0.00
100
Cycles @50Hz
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1
2
3
4
Time(ms)
Page 3 of 3
160
0.75
200
0
140
5
6
7 8 9 10