MTP35M1

RoHS
MTP35M1 RoHS
SEMICONDUCTOR
Nell High Power Products
Glass Passivated Triple-Phase Bridge Rectifier, 35A
MTP3506M1 Thru MTP3516M1
42±0.5
~
1±0.2
Φ14±0.2
37.6±0.2
Front
~
6±0.2
40±0.2
42±0.5
~
18.2±0.5
13.3±0 .2
0.85±0.1
13.3±0 .2
Φ5.5±0.2
+
9±0.2 (TYP.)
6.35±0 .10 (TYP.)
26.6±0 .2
All dimensions in millimeters
Rear
FEATURES
UL recognition file number E320098
Universal 3-way terminals: snap-on, wire
wrap-around, or PCB mounting
Typical IR less than 1.0 µA
High surge current capability
Low thermal resistance
Solder dip 260°C, 40s
Compliant to RoHS
Glass passivated chips
Unique molding body
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for big power supply, field supply for DC motor,
industrial automation applications.
PRIMARY CHARACTERRISTICS
MECHANICAL DATA
Case: Molded GBPC
Epoxy meets UL 94 V-O flammability rating
Terminals: Nickel plated on faston lugs, solderable per
J-STD-002 and JESD22-B102.
Polarity: As marked
Mounting Torque: 20 inches-lbs.max.
Weight: 29g (1.02 ozs)
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Page 1 of 3
IF(AV)
35A
V RRM
600V to 1600V
I FSM
450A
IR
5 µA
VF
1.1V
T J max.
150ºC
RoHS
MTP35M1 RoHS
SEMICONDUCTOR
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted)
MTP35..M1
PARAMETER
SYMBOL
UNIT
06
08
10
12
16
Maximum repetitive peak reverse voltage
V RRM
600
800
1000
1200
1600
V
Maximum RMS voltage
V RMS
420
560
700
840
1120
V
V DC
600
800
1000
1200
1600
V
Maximum DC blocking voltage
I F(AV)
35
A
I FSM
450
A
I 2t
1013
A 2s
V ISO
2500
V
T J ,T STG
-55 to 150
ºC
Maximum average forward rectified output current (Fig.1) , T c =90°C
Peak forward surge current single sine-wave superimposed on
rated load
Rating (non-repetitive, for t greater than 1 ms and less than 10 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
TEST
CONDITIONS
SYMBOL
Maximum instantaneous forward drop per diode
I F = 17.5A
VF
Maximum reverse DC current at rated DC blocking
voltage per diod
T A = 25°C
PARAMETER
MTP35..M1
06
08
UNIT
12
16
V
1.1
5
IR
T A = 150°C
Typical junction capacitance per diode
10
µA
1000
CJ
4V, 1MHz
pF
300
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
MTP35..M1
PARAMETER
SYMBOL
R θJC (1)
Typical thermal resistance
UNIT
06
08
10
0.8
12
16
°C/W
Notes
(1) With heatsink
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with
M5 screw
ORDERING INFORMATION TABLE
MTP
Device code
1
1
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-
35
10
M1
2
3
4
Module type: 3 phase Bridge
2
-
Current rating: IF (AV)
3
-
Voltage code x 10: VRRM
4
-
Package outline, M1 for “Molding GBPC”package
Page 2 of 3
RoHS
MTP35M1 RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.1 Forward Current Derating Curve
Fig.2 Typical Forward Characteristics
50
lnstantaneous forward current - l F (A)
Average forward current - l F (A)
50
Mounted on a
220x220x50mm
Al plate heatsink
40
30
20
10
Resistive or
Inductive load
0
0
50
100
40
30
20
10
0
0.6
150
Case temperature - T C (°C)
Transient thermal impedance - R thjc (°C/W)
Pdak fwd surge current - l FSM (A)
400
300
200
100
0
100
Number of cycles at 60Hz
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1.0
1.2
1.6
1.4
Fig.4 Transient thermal impedance
500
10
0.8
lnstantaneous forward voltage - V F (V)
Fig.3 Max Non-Repetitive Peak Surge Current
1
max.
typ.
1.0
Zth(j-C)
0.5
0
0.001
0.01
0.1
1.0
10
Square wave pulse duration (s)
Page 3 of 3
100