GBPC35M

GBPC35M
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Glass Passivated Single-Phase Bridge Rectifier, 35A
GBPC3506M Thru GBPC3512M
FEATURES
UL recognition file number E320098
Universal 3-way terminals: snap-on, wire
wrap-around, or PCB mounting
Typical IR less than 1.0 µA
High surge current capability
Low thermal resistance
Solder dip 260°C, 10s
Compliant to RoHS
Glass passivated chips
Epoxy molding body
TYPICAL APPLICATIONS
Front
Rear
General purpose use in AC/DC bridge full wave
rectification for power supply, home appliances,
office equipment, industrial automation applications.
MECHANICAL DATA
-
~
~
+
Case: GBPC molding type.
Epoxy meets UL 94 V-O flammability rating
Terminals: Nickel plated on faston lugs,
solderable per J-STD-002 and
JESD22-B102.
Polarity: As marked,positive lead by belevled corner
Mounting Torque: 20 inches-lbs. max. (M5 screw)
Weight: 10g (0.35 ozs)
32.0 ± 0.2
6.35 ± 0.2
-
~
~
+
15 ± 0.2
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1 ± 0.2
Aluminum base plate
13.3 ± 0.2
All dimensions in millimeters
Page 1 of 4
28 ± 0.2
Ø10.00±0.2
8.9 ± 0.2
0.85 ± 0.2
26 ± 0.2
32 ± 0.2
Ø5. 50±0.2
5 ± 0.2
GBPC35M
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
PRIMARY CHARACTERRISTICS
IF(AV)
35A
V RRM
600V to 1200V
I FSM
400A
IR
5 µA
VF
1.1V
T J max.
150ºC
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
GBPC35..M
PARAMETER
UNIT
SYMBOL
06
08
10
12
1000
1200
V
Maximum repetitive peak reverse voltage
V RRM
600
800
Maximum RMS voltage
V RMS
420
560
700
840
V
Maximum DC blocking voltage
V DC
600
800
1000
1200
V
Maximum average forward rectified output current (Fig.1), T C =85°C
I F(AV)
35
A
I FSM
400
A
Rating (non-repetitive, for t greater than 1 ms and less than 10 ms)
for fusing
I 2t
800
A 2s
RMS isolation voltage from case to leads
V ISO
2500
V
T J ,T STG
-55 to 150
ºC
Peak forward surge current single sine-wave superimposed on
rated load
Operating junction storage temperature range
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
Maximum instantaneous forward drop per diode
Maximum reverse DC current at rated DC blocking
GBPC35..M
TEST
CONDITIONS
SYMBOL
I F = 17.5A
VF
T A = 25°C
voltage per diode
T A = 150°C
Typical junction capacitance per diode
4V, 1MHz
06
08
10
12
1.1
V
5
IR
UNIT
µA
500
CJ
pF
300
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
GBPC35..M
PARAMETER
SYMBOL
Typical thermal resistance
R θJC (1)
06
08
10
0.8
UNIT
12
°C/W
Notes
(1) With heatsink
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with
M5 screw
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Page 2 of 4
GBPC35M
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Ordering Information Tabel
Device code
GBPC
35
10
M
1
2
3
4
1
-
Module type: "GBPC" Package, 1Φ Bridge
2
-
lF(AV) rating : "35" for 35A
3
-
Voltage code : code x 100 = V RRM
4
-
"M" for Epoxy molded type.
Fig.2 Maximum output rectified current
32
40
35
35
Average forward current (A)
Average forward current (A)
Fig.1 Maximum output rectified current
30
25
Bridges Mounted on
20
5x4x3”
AL, Finned Plate
15
10
60 HZ
Resistive or
lnductive Load
5
20
40
60
80
100
120
140
25
20
RthSA = 0.5 °C/W
15
10
0
160
0
Case temperature (°C)
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30
5
0
0
60 HZ
Resistive or
lnductive Load
10
20
30
40
50
60
70
Ambient temperature (°C)
Page 3 of 4
80
90
100
GBPC35M
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.4 Maximum non-repetitive peak forward
surge current per diode
1000
80
70
Peak forward surge current (A)
Average power dissipation of bridge (W)
Fig.3 Maximum power dissipation
Capacitive Load
60
T J = T J Max.
50
40
Resistive or
Inductive Load
30
20
10
T J = T J Max.
0.5 ms Single Sine-Wave
100
1.0 Cycle
0
10
0
20
10
40
30
1
10
Average output current (A)
Number of Cycles at 60 Hz
Fig.5 Typical Instantaneous forward
characteristics per diode
Fig.6 Typical reveres leakage characteristics
per diode
1000
Instantaneous reverse leakage
current (µA)
Instantaneous forward current (A)
100
10
T J = 25°C
1
0.1
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
T J = 125°C
100
10
1
T J = 25°C
0.1
1.3
0
Instantaneous forward voltage (V)
Transient thermal impedance - R thjc (°C/W)
T J = 25°C
f = 1.0 MHZ
V sig = 50mVp-p
100
10
10
100
30
40
50
60
70
80
100
90
1.0
Zth(j-C)
0.5
0
0.001
0.01
0.1
1.0
10
Square wave pulse duration (s)
Reverse v oltage (V)
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20
Fig.8 Typical transient thermal lmpedance
1,000
1
10
Percent of rated peak reverse voltage (%)
Fig.7 Typical junction capacitance per diode
Junction capacitance (pF)
100
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100