CGD914 - Jmnic.com

DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
M3D252
CGD914; CGD914MI
860 MHz, 20 dB gain power
doubler amplifier
Product specification
Supersedes data of 2000 Jul 25
2001 Nov 01
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
FEATURES
CGD914; CGD914MI
PINNING - SOT115J
• Excellent linearity
DESCRIPTION
PIN
• Extremely low noise
CGD914
• Excellent return loss properties
1
• Rugged construction
2 and 3
• Gold metallization ensures excellent reliability.
5
7 and 8
APPLICATIONS
9
CGD914MI
input
output
common
common
+VB
+VB
common
common
output
input
• CATV systems operating in the 40 to 870 MHz
frequency range.
handbook, halfpage
DESCRIPTION
1
Hybrid amplifier module in a SOT115J package operating
at a voltage supply of 24 V (DC), employing both GaAs
and Si dies. Both modules are electrically identical, only
the pinning is different.
2
3
5
7
Side view
8
9
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
Gp
Itot
PARAMETER
CONDITIONS
power gain
total current consumption (DC)
MIN.
MAX.
UNIT
f = 45 MHz
19.75
20.25
dB
f = 870 MHz
20.2
21.5
dB
VB = 24 V
345
375
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VB
supply voltage
−
30
Vi
RF input voltage
−
−
single tone
−
70
dBmV
132 channels flat
−
45
dBmV
V
Tstg
storage temperature
−40
+100
°C
Tmb
operating mounting base temperature
−20
+100
°C
2001 Nov 01
2
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
CGD914; CGD914MI
CHARACTERISTICS
Bandwidth 45 to 870 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω.
SYMBOL
Gp
PARAMETER
power gain
CONDITIONS
MIN.
TYP.
MAX.
UNIT
f = 45 MHz
19.75
20
20.25
dB
f = 870 MHz
20.2
21
21.5
dB
SL
slope straight line
f = 45 to 870 MHz
0.2
1
1.5
dB
FL
flatness straight line
f = 45 to 100 MHz
−0.25
−
+0.25
dB
f = 100 to 800 MHz
−0.6
−
+0.4
dB
f = 800 to 870 MHz
−0.45
−
+0.2
dB
flatness narrow band
in each 6 MHz segment
−
−
±0.1
dB
input return losses
f = 40 to 80 MHz
20
−
−
dB
f = 80 to 160 MHz
20
−
−
dB
f = 160 to 320 MHz
18
−
−
dB
f = 320 to 550 MHz
16
−
−
dB
f = 550 to 650 MHz
15
−
−
dB
f = 650 to 750 MHz
14
−
−
dB
f = 750 to 870 MHz
14
−
−
dB
f = 870 to 914 MHz
10
−
−
dB
f = 40 to 80 MHz
21
−
−
dB
f = 80 to 160 MHz
21
−
−
dB
f = 160 to 320 MHz
20
−
−
dB
f = 320 to 550 MHz
19
−
−
dB
f = 550 to 650 MHz
18
−
−
dB
f = 650 to 750 MHz
17
−
−
dB
f = 750 to 870 MHz
16
−
−
dB
s11
s22
output return losses
f = 870 to 914 MHz
14
−
−
dB
s21
phase response
f = 50 MHz
−45
−
+45
deg
s12
reverse isolation
RFout to RFin
−
−
22
dB
CTB
composite triple beat
Xmod
cross modulation
2001 Nov 01
79 chs; fm = 445.25 MHz; note 1
−
−
−76
dB
112 chs; fm = 649.25 MHz; note 2
−
−
−64
dB
132 chs; fm = 745.25 MHz; note 3
−
−
−55
dB
79 chs flat; Vo = 44 dBmV; fm = 547.25 MHz
−
−
−73
dB
112 chs flat; Vo = 44 dBmV; fm = 745.25 MHz
−
−
−64
dB
132 chs flat; Vo = 44 dBmV; fm = 745.25 MHz
−
−
−60
dB
79 chs; fm = 55.25 MHz; note 1
−
−
−70
dB
112 chs; fm = 55.25 MHz; note 2
−
−
−62
dB
132 chs; fm = 55.25 MHz; note 3
−
−
−57
dB
79 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
−
−
−69
dB
112 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
−
−
−65
dB
132 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
−
−
−63
dB
3
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
SYMBOL
PARAMETER
CSO Sum composite second
order distortion (sum)
CSO Diff
NF
d2
Vo
Itot
composite second
order distortion (diff)
noise figure
second order distortion
output voltage
total current
consumption (DC)
CONDITIONS
CGD914; CGD914MI
MIN.
TYP.
MAX.
UNIT
79 chs; fm = 446.5 MHz; note 1
−
−
−71
dB
112 chs; fm = 746.5 MHz; note 2
−
−
−60
dB
132 chs; fm = 860.5 MHz; note 3
−
−
−56
dB
79 chs flat; Vo = 44 dBmV; fm = 548.5 MHz
−
−
−63
dB
112 chs flat; Vo = 44 dBmV; fm = 746.5 MHz
−
−
−54
dB
132 chs flat; Vo = 44 dBmV; fm = 860.5 MHz
−
−
−49
dB
79 chs; fm = 150 MHz; note 1
−
−
−59
dB
112 chs; fm = 150 MHz; note 2
−
−
−53
dB
132 chs; fm = 150 MHz; note 3
−
−
−48
dB
79 chs flat; Vo = 44 dBmV; fm = 150 MHz
−
−
−60
dB
112 chs flat; Vo = 44 dBmV; fm = 150 MHz
−
−
−59
dB
132 chs flat; Vo = 44 dBmV; fm = 150 MHz
−
−
−57
dB
f = 50 MHz
−
2.5
3
dB
f = 550 MHz
−
2.5
3
dB
f = 750 MHz
−
2.6
3.5
dB
f = 870 MHz
−
3
3.5
dB
note 4
−
−
−60
dB
note 5
−
−
−54
dB
note 6
−
−
−50
dB
dim = −60 dB; note 7
69
−
−
dBmV
dim = −60 dB; note 8
66
−
−
dBmV
dim = −60 dB; note 9
63
−
−
dBmV
note 10
345
360
375
mA
Notes
1. Vo = 38 dBmV at 54 MHz; Tilt = 7.3 dB (55 to 547 MHz) extrapolated to 12 dB at 870 MHz.
2. Vo = 38 dBmV at 54 MHz; Tilt = 10.2 dB (55 to 745 MHz) extrapolated to 12 dB at 870 MHz.
3. Vo = 38 dBmV at 54 MHz; Tilt = 12 dB (55 to 865 MHz).
4. fp = 55.25 MHz; Vp = 60 dBmV; fq = 493.25 MHz; Vq = 60 dBmV; measured at fp + fq = 548.5 MHz.
5. fp = 55.25 MHz; Vp = 60 dBmV; fq = 691.25 MHz; Vq = 60 dBmV; measured at fp + fq = 746.5 MHz.
6. fp = 55.25 MHz; Vp = 60 dBmV; fq = 805.25 MHz; Vq = 60 dBmV; measured at fp + fq = 860.5 MHz.
7. Measured according to DIN45004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo −6 dB; fr = 549.25 MHz;
Vr = Vo −6 dB; measured at fp + fq − fr = 538.25 MHz.
8. Measured according to DIN45004B: fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo −6 dB; fr = 749.25 MHz;
Vr = Vo −6 dB; measured at fp + fq − fr = 738.25 MHz.
9. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo −6 dB; fr = 860.25 MHz;
Vr = Vo −6 dB; measured at fp + fq − fr = 849.25 MHz.
10. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2001 Nov 01
4
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
MCD976
−60
handbook, halfpage
(1)
CTB
(dB)
CGD914; CGD914MI
MCD977
−60
52
handbook, halfpage
Xmod
Vo
(dBmV)
(1)
52
Vo
(dBmV)
(dB)
−70
48
−70
48
−80
44
−80
44
(2)
(3)
(4)
−90
(2)
−90
40
40
(3)
(4)
−100
200
0
400
600
−100
36
1000
800
f (MHz)
200
0
400
600
36
1000
800
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
(1) Vo.
(2) Typ. +3 σ.
Fig.2
(3) Typ.
(4) Typ. −3 σ.
Composite triple beat as a function of
frequency under tilted conditions.
MCD978
−50
handbook, halfpage
(1)
CSO
(dB)
Fig.3
(2)
CSO
(dB)
Vo
54
(2)
(1)
−60
Vo
(dBmV)
50
48
(3)
−70
(4)
46
44
(4)
−80
−90
MCD979
handbook, halfpage
(3)
−70
Cross modulation as a function of frequency
under tilted conditions.
−50
52
(dBmV)
−60
(3) Typ.
(4) Typ. −3 σ.
40
200
0
400
600
−80
42
−90
38
−100
36
1000
800
f (MHz)
0
200
400
600
34
800
1000
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
(1) Vo.
(2) Typ. +3 σ.
Fig.4
(3) Typ.
(4) Typ. −3 σ.
Composite second order distortion (sum) as
a function of frequency under tilted
conditions.
2001 Nov 01
Fig.5
5
(3) Typ.
(4) Typ. −3 σ.
Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
MCD980
−60
handbook, halfpage
−70
(1)
MCD981
−60
48
handbook, halfpage
Xmod
Vo
(dBmV)
CTB
(dB)
CGD914; CGD914MI
Vo
(dBmV)
(dB)
−70
44
48
(1)
44
(2)
(2)
−80
(3)
−80
40
40
(4)
(3)
−90
0
200
400
600
(4)
−90
36
1000
800
f (MHz)
0
200
400
600
36
1000
800
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 79 chs flat (50 to 550 MHz).
ZS = ZL = 75 Ω; VB = 24 V; 79 chs flat (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
(1) Vo.
(2) Typ. +3 σ.
Fig.6
(3) Typ.
(4) Typ. −3 σ.
Composite triple beat as a function of
frequency under flat conditions.
MCD982
−50
handbook, halfpage
Fig.7
MCD983
handbook, halfpage
CSO
(dB)
(1)
−60
Cross modulation as a function of frequency
under flat conditions.
−50
48
Vo
(dBmV)
CSO
(dB)
−60
44
48
Vo
(dBmV)
(2)
(1)
(2)
44
(3)
(3)
−70
(3) Typ.
(4) Typ. −3 σ.
(4)
40
−70
40
36
−80
36
32
1000
800
f (MHz)
−90
(4)
−80
−90
200
0
400
600
200
0
400
600
32
1000
800
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 79 chs flat (50 to 550 MHz).
ZS = ZL = 75 Ω; VB = 24 V; 79 chs flat (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
(1) Vo.
(2) Typ. +3 σ.
Fig.8
(3) Typ.
(4) Typ. −3 σ.
Composite second order distortion (sum) as
a function of frequency under flat
conditions.
2001 Nov 01
Fig.9
6
(3) Typ.
(4) Typ. −3 σ.
Composite second order distortion (diff) as
a function of frequency under flat
conditions.
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
MCD984
−40
handbook, halfpage
(1)
CTB
(dB)
CGD914; CGD914MI
MCD985
−50
52
handbook, halfpage
(1)
Xmod
Vo
(dBmV)
52
Vo
(dBmV)
(dB)
−50
48
−60
48
−60
44
−70
44
(2)
(2)
−70
(3)
−80
40
40
(3)
(4)
−80
0
200
400
600
−90
36
1000
800
f (MHz)
(4)
0
200
400
600
36
1000
800
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig.10 Composite triple beat as a function of
frequency under tilted conditions.
MCD986
−50
handbook, halfpage
(1)
CSO
(dB)
(2)
(3)
−60
(3) Typ.
(4) Typ. −3 σ.
Fig.11 Cross modulation as a function of frequency
under tilted conditions.
MCD987
−50
52
handbook, halfpage
Vo
(dBmV)
(1)
CSO
(dB)
52
Vo
(dBmV)
48
−60
48
44
−70
44
(4)
−70
(2)
−80
−80
40
40
(3)
−90
0
200
400
600
−90
36
1000
800
f (MHz)
(4)
0
200
400
600
36
1000
800
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig.12 Composite second order distortion (sum) as
a function of frequency under tilted
conditions.
2001 Nov 01
(3) Typ.
(4) Typ. −3 σ.
Fig.13 Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
7
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
MCD988
−50
handbook, halfpage
−60
(1)
MCD989
−60
48
handbook, halfpage
Xmod
Vo
(dBmV)
CTB
(dB)
CGD914; CGD914MI
Vo
(dBmV)
(dB)
−70
44
(1)
−70
44
(2)
(2)
(3)
(4)
48
−80
40
40
(3)
−80
−90
36
36
(4)
−90
0
200
400
600
−100
32
1000
800
f (MHz)
0
200
400
600
32
1000
800
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 112 chs flat (50 to 750 MHz).
ZS = ZL = 75 Ω; VB = 24 V; 112 chs flat (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig.14 Composite triple beat as a function of
frequency under flat conditions.
MCD990
−50
(2)
handbook, halfpage
CSO
(dB)
−60
(3) Typ.
(4) Typ. −3 σ.
Fig.15 Cross modulation as a function of frequency
under flat conditions.
(3)
Vo
(4)
(dBmV)
(1)
44
MCD991
−50
48
handbook, halfpage
Vo
(dBmV)
(2)
CSO
(dB)
48
−60
(1)
44
(3)
−70
40
−70
−80
36
−80
32
1000
800
f (MHz)
−90
−90
0
200
400
600
(4)
40
36
0
200
400
600
32
1000
800
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 112 chs flat (50 to 750 MHz).
ZS = ZL = 75 Ω; VB = 24 V; 112 chs; flat (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig.16 Composite second order distortion (sum) as
a function of frequency under flat
conditions.
2001 Nov 01
(3) Typ.
(4) Typ. −3 σ.
Fig.17 Composite second order distortion (diff) as
a function of frequency under flat
conditions.
8
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
MCD992
−40
handbook, halfpage
(1)
CTB
(dB)
MCD993
−50
52
handbook, halfpage
Xmod
Vo
(dBmV)
−50
CGD914; CGD914MI
(1)
−60
44
−70
48
(2)
−60
(3)
(2)
(4)
−70
Vo
(dBmV)
(dB)
48
52
44
(3)
−80
40
40
(4)
−80
0
200
400
600
−90
36
1000
800
f (MHz)
0
200
400
600
36
1000
800
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
ZS = ZL = 75 Ω; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig.18 Composite triple beat as a function of
frequency under tilted conditions.
MCD994
−40
handbook, halfpage
CSO
(dB)
Fig.19 Cross modulation as a function of frequency
under tilted conditions.
CSO
(dB)
(1)
−50
−60
48
−60
40
0
200
400
600
(4)
44
44
(4)
−70
Vo
(dBmV)
(3)
(2)
−80
(2)
48
(3)
52
handbook, halfpage
(dBmV)
−50
MCD995
−40
52
Vo
(1)
(3) Typ.
(4) Typ. −3 σ.
−70
40
−80
36
−90
36
1000
800
f (MHz)
0
200
400
600
32
800
1000
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
ZS = ZL = 75 Ω; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig.20 Composite second order distortion (sum) as
a function of frequency under tilted
conditions.
2001 Nov 01
(3) Typ.
(4) Typ. −3 σ.
Fig.21 Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
9
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
MCD996
−40
handbook, halfpage
−50
(1)
MCD997
−60
48
handbook, halfpage
Xmod
Vo
(dBmV)
CTB
(dB)
CGD914; CGD914MI
Vo
(dBmV)
(dB)
−70
44
48
(1)
44
(2)
−60
40
−80
36
−90
32
1000
800
f (MHz)
−100
(2)
(3)
40
(3)
(4)
−70
−80
0
200
400
600
(4)
200
0
400
600
32
1000
800
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 132 chs flat (50 to 870 MHz).
ZS = ZL = 75 Ω; VB = 24 V; 132 chs flat (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig.22 Composite triple beat as a function of
frequency under flat conditions.
MCD998
−50
handbook, halfpage
(2)
CSO
(dB)
(3)
−60
(1)
(4)
36
(3) Typ.
(4) Typ. −3 σ.
Fig.23 Cross modulation as a function of frequency
under flat conditions.
MCD999
−40
48
handbook, halfpage
Vo
(dBmV)
Vo
(dBmV)
CSO
(dB)
−50
44
48
(1)
44
(2)
−70
−60
40
40
(3)
−80
−90
0
200
400
600
36
−70
32
1000
800
f (MHz)
−80
(4)
0
36
200
400
600
32
1000
800
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 132 chs flat (50 to 870 MHz).
ZS = ZL = 75 Ω; VB = 24 V; 132 chs flat (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.
(1) Vo.
(3) Typ.
(2) Typ. +3 σ.
(4) Typ. −3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig.24 Composite second order distortion (sum) as
a function of frequency under flat
conditions.
2001 Nov 01
Fig.25 Composite second order distortion (diff) as
a function of frequency under flat
conditions.
10
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
CGD914; CGD914MI
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A2
1
2
3
5
7
8
9
A
L
F
S
W
c
e
b
w M
e1
d
U2
q2
Q
B
y M B
q1
y M B
y M B
p
U1
q
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A2
A
max. max.
mm 20.8
9.1
OUTLINE
VERSION
b
c
d
D
E
max. max. max.
e
e1
F
0.51
0.25 27.2 2.54 13.75 2.54 5.08 12.7
0.38
L
min.
p
Q
max.
8.8
4.15
3.85
2.4
REFERENCES
IEC
JEDEC
EIAJ
q1
q2
38.1 25.4 10.2
S
U1
U2
max.
4.2 44.75
8
EUROPEAN
PROJECTION
W
w
6-32 0.25
UNC
y
Z
max.
0.1
3.8
ISSUE DATE
99-02-06
SOT115J
2001 Nov 01
q
11
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
CGD914; CGD914MI
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
2001 Nov 01
12
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
NOTES
2001 Nov 01
13
CGD914; CGD914MI
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
NOTES
2001 Nov 01
14
CGD914; CGD914MI
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
NOTES
2001 Nov 01
15
CGD914; CGD914MI
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected]
SCA73
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613518/06/pp16
Date of release: 2001
Nov 01
Document order number:
9397 750 08861