BGD712 - Jmnic.com

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D252
BGD712
750 MHz, 18.5 dB gain power
doubler amplifier
Product specification
Supersedes data of 2001 Oct 29
2001 Nov 02
Philips Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler amplifier
FEATURES
BGD712
PINNING - SOT115J
• Excellent linearity
PIN
• Extremely low noise
DESCRIPTION
1
• Excellent return loss properties
input
2, 3
• Silicon nitride passivation
common
5
• Rugged construction
+VB
7, 8
• Gold metallization ensures excellent reliability.
common
9
output
APPLICATIONS
• CATV systems operating in the 40 to 750 MHz
frequency range.
handbook, halfpage
1
2
3
5
7
8
9
DESCRIPTION
Side view
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
Gp
Itot
PARAMETER
CONDITIONS
power gain
total current consumption (DC)
MIN.
MAX.
UNIT
f = 45 MHz
18.2
18.8
dB
f = 750 MHz
19
20
dB
VB = 24 V
380
410
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VB
supply voltage
−
30
Vi
RF input voltage
−
70
dBmV
Tstg
storage temperature
−40
+100
°C
Tmb
operating mounting base temperature
−20
+100
°C
2001 Nov 02
2
V
Philips Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler amplifier
BGD712
CHARACTERISTICS
Bandwidth 40 to 750 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω
SYMBOL
Gp
PARAMETER
power gain
CONDITIONS
MIN.
TYP.
MAX.
UNIT
f = 45 MHz
18.2
18.5
18.8
dB
f = 750 MHz
19
19.5
20
dB
dB
SL
slope straight line
f = 45 to 750 MHz; note 1
0.5
1
1.5
FL
flatness straight line
f = 45 to 100 MHz
−
−
±0.35
dB
f = 100 to 700 MHz
−
−
±0.5
dB
f = 700 to 750 MHz
−
−
±0.15
dB
S11
S22
input return losses
output return losses
f = 45 to 80 MHz
23
−
−
dB
f = 80 to 160 MHz
23
−
−
dB
f = 160 to 320 MHz
21
−
−
dB
f = 320 to 550 MHz
20
−
−
dB
f = 550 to 650 MHz
20
−
−
dB
f = 650 to 750 MHz
19
−
−
dB
f = 750 to 790 MHz
17
−
−
dB
f = 45 to 80 MHz
23
−
−
dB
f = 80 to 160 MHz
23
−
−
dB
f = 160 to 320 MHz
20
−
−
dB
f = 320 to 550 MHz
20
−
−
dB
f = 550 to 650 MHz
19
−
−
dB
f = 650 to 750 MHz
19
−
−
dB
f = 750 to 790 MHz
17
−
−
dB
S21
phase response
f = 50 MHz
−45
−
+45
deg
CTB
composite triple beat
112 channels flat; Vo = 44 dBmV;
fm = 745.25 MHz
−
−
−62
dB
79 channels flat; Vo = 44 dBmV;
fm = 547.25 MHz
−
−
−68
dB
79 channels; fm = 445.25 MHz;
Vo = 49.3 dBmV at 547 MHz; note 2
−
−
−63
dB
112 channels flat; Vo = 44 dBmV;
fm = 55.25 MHz
−
−
−63
dB
79 channels flat; Vo = 44 dBmV;
fm = 55.25 MHz
−
−
−69
dB
79 channels; fm = 745.25 MHz;
Vo = 49.3 dBmV at 547 MHz; note 2
−
−
−60
dB
Xmod
cross modulation
2001 Nov 02
3
Philips Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler amplifier
SYMBOL
CSO
PARAMETER
composite second
order distortion
CONDITIONS
BGD712
MIN.
TYP.
MAX.
UNIT
112 channels flat; Vo = 44 dBmV;
fm = 746.5 MHz
−
−
−63
dB
79 channels flat; Vo = 44 dBmV;
fm = 548.5 MHz
−
−
−68
dB
79 channels; fm = 746.5 MHz;
Vo = 49.3 dBmV at 547 MHz; note 2
−
−
−62
dB
−
−
−74
dB
d2
second order distortion
note 3
Vo
output voltage
dim = −60 dB; note 4
64
−
−
dBmV
NF
noise figure
f = 50 MHz
−
−
5.5
dB
f = 550 MHz
−
−
5.5
dB
f = 750 MHz
−
−
7
dB
note 5
380
395
410
mA
Itot
total current
consumption (DC)
Notes
1. Slope straight line is defined as gain at 750 MHz − gain at 45 MHz.
2. Tilt = 7.3 dB (55 to 547 MHz).
3. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 691.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 746.5 MHz.
4. Measured according to DIN45004B:
fp = 740.25 MHz; Vp = Vo;
fq = 747.25 MHz; Vq = Vo −6 dB;
fr = 749.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 738.25 MHz.
5. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2001 Nov 02
4
Philips Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler amplifier
MCD842
−50
(1)
−60
56
handbook, halfpage
Vo
(dBmV)
CTB
(dB)
MCD843
−50
56
handbook, halfpage
BGD712
Vo
(dBmV)
Xmod
(dB)
(1)
−60
52
(2)
52
(3)
(4)
−70
48
−70
48
−80
(2)
(3)
(4) 44
−80
44
−90
0
200
400
600
f (MHz)
−90
40
800
0
200
400
ZS = ZL = 75 Ω; VB = 24 V; 79 channels;
tilt = 7.3 dB (50 to 550 MHz).
ZS = ZL = 75 Ω; VB = 24 V; 79 channels;
tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
(1) Vo.
(2) Typ. +3 σ.
Fig.2
(3) Typ.
(4) Typ. −3 σ.
Composite triple beat as a function of
frequency under tilted conditions.
Fig.3
MCD844
−50
56
handbook, halfpage
Vo
(dBmV)
CSO
(dB)
(1)
−60
52
(2)
−70
48
(3)
−80
44
(4)
−90
0
200
400
600
f (MHz)
40
800
ZS = ZL = 75 Ω; VB = 24 V; 79 channels;
tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
Fig.4
(3) Typ.
(4) Typ. −3 σ.
Composite second order distortion as a
function of frequency under tilted
conditions.
2001 Nov 02
5
600
f (MHz)
40
800
(3) Typ.
(4) Typ. −3 σ.
Cross modulation as a function of frequency
under tilted conditions.
Philips Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler amplifier
BGD712
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A2
1
2
3
5
7
8
9
A
L
F
S
W
c
e
b
w M
e1
d
U2
q2
Q
B
y M B
q1
y M B
y M B
p
U1
q
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A2
A
max. max.
mm 20.8
9.1
OUTLINE
VERSION
b
c
d
D
E
max. max. max.
e
e1
F
0.51
0.25 27.2 2.54 13.75 2.54 5.08 12.7
0.38
L
min.
p
Q
max.
8.8
4.15
3.85
2.4
REFERENCES
IEC
JEDEC
EIAJ
q1
q2
38.1 25.4 10.2
S
U1
U2
max.
4.2 44.75
8
EUROPEAN
PROJECTION
W
w
6-32 0.25
UNC
y
Z
max.
0.1
3.8
ISSUE DATE
99-02-06
SOT115J
2001 Nov 02
q
6
Philips Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler amplifier
BGD712
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Nov 02
7
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected]
SCA73
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613518/04/pp8
Date of release: 2001
Nov 02
Document order number:
9397 750 09028