Hardware Documentation D at a S h e e t ® HAL 2850 Linear Hall-Effect Sensor with PWM Output Edition July 25, 2013 DSH000160_002EN HAL 2850 DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. Micronas Trademarks – HAL – varioHAL Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers’ technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document’s content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, military, aviation, or aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas’ products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. 2 July 25, 2013; DSH000160_002EN Micronas HAL 2850 DATA SHEET Contents Page Section Title 5 5 5 1. 1.1. 1.2. Introduction Features Major Applications 6 6 6 6 2. 2.1. 2.2. 2.3. Ordering Information Marking Code Operating Junction Temperature Range (TJ) Hall Sensor Package Codes 7 7 8 9 10 11 11 11 11 11 11 12 3. 3.1. 3.2. 3.2.1. 3.2.2. 3.3. 3.3.1. 3.3.2. 3.3.3. 3.3.4. 3.4. 3.5. Functional Description General Function Digital Signal Processing Temperature Compensation DSP Configuration Registers Power-on Self Test (POST) Description of POST Implementation RAM Test ROM Test EEPROM Test Sensor Behavior in Case of External Errors Detection of Signal Path Errors 13 13 17 17 17 17 18 18 19 19 21 22 4. 4.1. 4.2. 4.3. 4.4. 4.5. 4.6. 4.6.1. 4.7. 4.8. 4.9. 4.9.1. Specifications Outline Dimensions Soldering, Welding and Assembly Pin Connections and Short Descriptions Dimensions of Sensitive Area Positions of Sensitive Area Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Magnetic Characteristics Definition of Sensitivity Error ES 23 25 5. 5.1. The PWM Module Programmable PWM Parameter 28 28 29 29 6. 6.1. 6.2. 6.3. Programming of the Sensor Programming Interface Programming Environment and Tools Programming Information 30 30 30 30 30 31 7. 7.1. 7.2. 7.3. 7.3.1. 7.4. Application Note Ambient Temperature EMC and ESD Output Description How to Measure PWM Output Signal Application Circuit Micronas July 25, 2013; DSH000160_002EN 3 HAL 2850 DATA SHEET Contents, continued Page Section Title 33 8. Data Sheet History 4 July 25, 2013; DSH000160_002EN Micronas HAL 2850 DATA SHEET Linear Hall-Effect Sensor with PWM Output Release Note: Revision bars indicate significant changes to the previous edition. 1.1. Features – High-precision linear Hall-effect sensor – Spinning current offset compensation – 20 bit digital signal processing 1. Introduction – ESD protection at DIO pin The HAL 2850 is a member of the Micronas family of programmable linear Hall-effect sensors. – Reverse voltage and ESD protection at VSUP pin The HAL 2850 features a temperature-compensated Hall plate with spinning current offset compensation, an A/D converter, digital signal processing, an EEPROM memory with redundancy and lock function for the calibration data, and protection devices at all pins. The internal digital signal processing is of great benefit because analog offsets, temperature shifts, and mechanical stress do not degrade digital signals. The easy programmability allows a 2-point calibration by adjusting the output signal directly to the input signal (like mechanical angle, distance, or current). Individual adjustment of each sensor during the customer’s manufacturing process is possible. With this calibration procedure, the tolerances of the sensor, the magnet, and the mechanical positioning can be compensated in the final assembly. In addition, the temperature-compensation of the Hall IC can be fit to all common magnetic materials by programming first- and second-order temperature coefficients of the Hall sensor sensitivity. It is also possible to compensate offset drifts over temperature generated by the customer application with a first-order temperature coefficient of the sensor offset. This enables operation over the full temperature range with high accuracy. For programming purposes, the sensor features a programming interface with a Biphase-M protocol on the DIO pin (output). In the application mode, the sensor provides a continuous PWM signal. – Various sensor parameter are programmable (like offset, sensitivity, temperature coefficients, etc.) – Non-volatile memory with redundancy and lock function – Programmable temperature compensation for sensitivity (2nd order) and offset (1st order) – PWM frequency programmable from 31.25 Hz up to 2 kHz – PWM resolution between 11 bit and 16 bit depending on the PWM frequency – The magnetic measurement range over temperature is adjustable from 24 mT up to 96 mT – On-board diagnostics (overvoltage, output current, overtemperature, signal path overflow) – Power-on self-test covering all memories – Biphase-M interface (programming mode) – Sample accurate transmission for certain periods (Each PWM period transmits a new Hall sample) – Digital readout of temperature and magnetic field information in calibration mode – Open-drain output with slew rate control (load independent) – Programming and operation of multiple sensors at the same supply line – High immunity against mechanical stress, ESD, and EMC 1.2. Major Applications – Contactless potentiometers – Angular measurements (e.g.; torque force, pedal position, suspension level, headlight adjustment; or valve position) – Linear position – Current sensing for motor control, battery management Micronas July 25, 2013; DSH000160_002EN 5 HAL 2850 DATA SHEET 2. Ordering Information 2.1. Marking Code The HAL 2850 has a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type Temperature Range A HAL2850 2850 2.2. Operating Junction Temperature Range (TJ) The Hall sensors from Micronas are specified to the chip temperature (junction temperature range TJ). A: TJ = 40 °C to +170 °C The relationship between ambient temperature (TA) and junction temperature is explained in Section 7.1. on page 30. 2.3. Hall Sensor Package Codes HALXXXXPA-T Temperature Range: A Package:UT for TO92UT -1/-2 Type: 2850 Example: HAL2850UT-A Type: 2850 Package: TO92UT-1/-2 Temperature Range: TJ = 40 C to +170 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors: Ordering Codes”. 6 July 25, 2013; DSH000160_002EN Micronas HAL 2850 DATA SHEET 3. Functional Description Application Mode 3.1. General Function The output signal is provided as continuous PWM signal. The HAL 2850 is a monolithic integrated circuit, which provides an output signal proportional to the magnetic flux through the Hall plate. Programming Mode For the programming of the sensor parameters, a Biphase-M protocol is used. The external magnetic field component, perpendicular to the branded side of the package, generates a Hall voltage. The Hall IC is sensitive to magnetic north and south polarity. This voltage is converted to a digital value, processed in the digital signal processing Unit (DSP) according to the settings of the EEPROM registers. The HAL 2850 provides non-volatile memory which is divided in different blocks. The first block is used for the configuration of the digital signal processing, the second one is used to configure the PWM module. The non-volatile memory employs inherent redundancy. The function and the parameters for the DSP are explained in Section 3.2. on page 8. Internal temperature compensation circuitry and the spinning current offset compensation enables operation over the full temperature range with minimal changes in accuracy and high offset stability. The circuitry also rejects offset shifts due to mechanical stress from the package. The HAL 2850 provides two operation modes, the application mode and the programming mode. VSUP Internally Stabilized Supply and Protection Devices Temperature Dependent Bias Oscillator Switched Hall Plate A/D Converter Digital Signal Processing Temperature Sensor A/D Converter Protection Devices PWM Module EEPROM Memory Open Drain Output with Slew Control DIO Programming Interface Lock Control GND Fig. 3–1: HAL 2850 block diagram Micronas July 25, 2013; DSH000160_002EN 7 HAL 2850 DATA SHEET The output value y is calculated out of the factory-compensated Hall value yTCI as: 3.2. Digital Signal Processing All parameters and the values y, yTCI are normalized to the interval (1, 1) which represents the full scale magnetic range as programmed in the RANGE register. y = y TCI + d TVAL c TVAL Parameter d is representing the offset and c is the coefficient for sensitivity. Example for 40 mT Range 1 equals 40 mT +1 equals +40 mT For the definition of the register values, please refer to Section 3.2.2. on page 10 The digital signal processing (DSP) is the major part of the sensor and performs the signal conditioning. The parameters of the DSP are stored in the DSP CONFIG area of the EEPROM. The device provides a digital temperature compensation. It consists of the internal temperature compensation, the customer temperature compensation, as well as an offset and sensitivity adjustment. The internal temperature compensation (factory compensation) eliminates the temperature drift of the Hall sensor itself. The customer temperature compensation is calculated after the internal temperature drift has been compensated. Thus, the customer has not to take care about the sensor’s internal temperature drift. The current Hall value y is stored in the data register HVD immediately after it has been temperature compensated. A new PWM period transmits the recent temperaturecompensated Hall sample. A new Hall sample is transmitted by the next PWM period and samples will neither be lost nor doubly transmitted. Sample accurate transmission is available for native PWM periods (0.512 ms, 1.024 ms, 2.048 ms, 4.096 ms, 8.192 ms, 16.384 ms and 32.768 ms period). MDC PERIOD R PWMMIN B A internal temp. comp. D yTCI custom. temp. offset & sens. comp. adjustm. y 16 R limiter PWMDTY HVD T (temp.) Note: HVAL is stored in HVD register TVAL A D 12 to 16 bit PERIOD[4:0] OP D PWM polarity SR I/O logic PWM 31 to 2000 Hz Fig. 3–2: Block diagram of digital signal path 8 July 25, 2013; DSH000160_002EN Micronas HAL 2850 DATA SHEET 3.2.1. Temperature Compensation TVAL Terminology: The number TVAL provides the adjusted value of the built-in temperature sensor. D0: name of the register or register value d0: name of the parameter TVAL is a 16-bit two’s complement binary ranging from 32768 to 32767. The customer programmable parameters “c” (sensitivity) and d (offset) are polynomials of the temperature. The temperature is represented by the adjusted readout value TVAL of a built-in temperature sensor. The update rate of the temperature value TVAL is less than 100 ms. The sensitivity polynomial c(TVAL) is of second order in temperature: c TVAL = c 0 + c 1 TVAL + c 2 TVAL It is stored in the TVD register. Note: The actual resolution of the temperature sensor is 12 bit. The 16-bit representation avoids rounding errors in the computation. The relation between TVAL and the junction temperature TJ is 2 T J = 0 + TVAL 1 For the definition of the polynomial coefficients please refer to Section 3.2.2. on page 10. The Offset polynomial d(TADJ) is linear in temperature: d TVAL = d 0 + d 1 TVAL Table 3–1: Relation between TJ and TADJ (typical values) Coefficient Value Unit 0 71.65 °C 1 1 / 231.56 °C For the definition of the polynomial coefficients, please refer to Section 3.2.2. on page 10. For the calibration procedure of the sensor in the system environment, the two values HVAL and TADJ are provided. These values are stored in volatile registers. HVAL The number HVAL represents the digital output value y which is proportional to the applied magnetic field. HVAL is a 16-bit two’s complement binary ranging from 32768 to 32767. It is stored in the HVD register. y = HVAL ---------------32768 In case of internal overflows, the output will clamp to the maximum or minimum HVAL value. Please take care that during calibration, the output signal range does not reach the maximum/minimum value. Micronas July 25, 2013; DSH000160_002EN 9 HAL 2850 DATA SHEET 3.2.2. DSP Configuration Registers D1 Register This section describes the function of the DSP configuration registers. For details on the EEPROM please refer to Application Note Programming of HAL 2850. Table 3–3: Linear temperature coefficient Magnetic Range: RANGE The RANGE register defines the magnetic range of the A/D converter. The RANGE register has to be set according to the applied magnetic field range. EEPROM. RANGE Nominal Range 0 reserved 1 40 mT 2 60 mT 3 80 mT 4 100 mT 5 120 mT 6 140 mT 7 160 mT Parameter Range Resolution d1 3.076 x 106 ... 3.028 x 106 7 bit D1 64 ... 63 D1 is encoded as two’s complement binary. 0.1008 –5 d 1 = ---------------- D1 3.0518 10 64 Magnetic Sensitivity C The C (sensitivity) registers contain the parameters for the multiplier in the DSP. The multiplication factor is a second order polynomial of the temperature. C0 Register Table 3–4: Temperature independent coefficient For calculation of magnetic measurement range over temperature see Section 4.9. on page 21 parameter RANGEabs. The minimum value has to be used in order to guarantee no clipping over temperature. Parameter Range Resolution c0 2.0810 ... 2.2696 12 bit C0 2048 ... 2047 C0 is encoded as two’s complement binary: Magnetic Offset D 2.1758 c 0 = ---------------- C0 + 89.261 2048 The D (offset) registers contain the parameters for the adder in the DSP. The added value is a first order polynomial of the temperature. C1 Register Table 3–5: Linear temperature coefficient D0 Register Table 3–2: Temperature independent coefficient Parameter Range Resolution d0 0.5508 ... 0.5497 10 bit D0 512 ... 511 Parameter Range Resolution c1 7.955 x 106... 1.951 x 105 9 bit C1 256 ... 255 C1 is encoded as two’s complement binary. D0 is encoded as two’s complement binary. 0.4509 –5 c 1 = ---------------- C1 + 108.0 3.0518 10 256 0.5508 d 0 = ---------------- D0 512 10 July 25, 2013; DSH000160_002EN Micronas HAL 2850 DATA SHEET C2 Register 3.3.2. RAM Test Table 3–6: Quadratic temperature coefficient The RAM test consists of an address test and an RAM cell test. The address test checks if each byte of the RAM can be singly accessed. The RAM cell test checks if the RAM cells are capable of holding both 0 and 1. Parameter Range Resolution c2 1.87 x 1010... 1.86 x 1010 8 bit C2 128 ... 127 3.3.3. ROM Test C2 is encoded as two’s complement binary. The ROM test consists of a checksum algorithm. The checksum is calculated by a byte by byte summation of the entire ROM. The 8-bit checksum value is stored in the ROM. 0.2008 – 10 c 2 = ---------------- C2 9.3132 10 128 3.3. Power-on Self Test (POST) The HAL 2850 features a built-in power-on self test to support in system start-up test to enhanced the system failure detection possibilities. The power-on self test comprises the following sensor blocks: – RAM – ROM The checksum is calculated at the ROM test using the entire ROM and is then compared with the stored checksum. An error will be indicated in case that there is a difference between stored and calculated checksum. 3.3.4. EEPROM Test The EEPROM test is similar to the ROM test. The only difference is that the checksum is calculated for the EEPROM memory and that the 8-bit checksum is stored in one register of the EEPROM. – EEPROM The power-on self test can be activated by setting certain bits in the sensors EEPROM. HAL 2850 shows the following behavior in case of external errors: Table 3–7: Power-On Self Test Modes EEPROM. POST Mode / Function [1] [0] 0 0 POST disabled. 0 1 Memory test enabled (RAM, ROM, EEPROM). 3.3.1. Description of POST Implementation HAL 2850 starts the internal POST as soon as the external supply voltage reaches the minimum supply voltage (VSUPon). The sensor output is disabled during the POST. It is enabled after the POST has been finished (after tstartup). A failed POST is immediately setting the PWM output to the minimum duty cycle. Micronas 3.4. Sensor Behavior in Case of External Errors – Short of output against VSUP: The sensor output is switched off (high impedance) when an over current occurs in the DIO output. It is re enabled before or while the next low pulse of the PWM signal is transmitted.Therefore the ECU must discard the first rising edge after a disturbance has occurred. The ECU has to identify destroyed PWM periods by evaluating the period time – Break of VSUP or GND line: A sensor with opendrain output and digital interface does not need a wire-break detection logic. The wire-break function is covered by the pull-up resistor on the receiver. Assuming a pull-up resistor in the receiver 100% duty-cycle (output always high) indicates a GND or VSUP line break. This error can be detected one period after its occurrence – Under or over voltage: The sensor output is switched off (high impedance) after under or over voltage has been detected by the sensor – Over temperature detection: The sensor output is switched off (high impedance) after a too high temperature has been detected by the sensor (typ.180°C). It is switched on again after the chip temperature has reached a normal level. A build in hysteresis avoids oscillation of the output (typ. 25°C) July 25, 2013; DSH000160_002EN 11 HAL 2850 DATA SHEET 3.5. Detection of Signal Path Errors HAL 2850 can detect the following overflows within the signal path: – A positive overflow of the A/D converter, a positive overflow within the calculation of the low pass filter or the temperature compensation will set the PWM output to maximum duty cycle – A negative overflow of the A/D converter, a negative overflow within the calculation of the low pass filter or the temperature compensation will set the PWM output to minimum duty cycle – A positive or negative overflow of the A/D converter of the temperature sensor or a positive/negative overflow within the calculation of the calibrated temperature value sets the PWM output to minimumduty-cycle 12 July 25, 2013; DSH000160_002EN Micronas HAL 2850 DATA SHEET 4. Specifications 4.1. Outline Dimensions A2 E1 Bd A3 A4 F1 D1 y Center of sensitive area F3 F2 3 L1 2 L 1 e c Θ b physical dimensions do not include moldflash. 2.5 0 solderability is guaranteed between end of pin and distance F1. 5 mm scale Sn-thickness might be reduced by mechanical handling. A4, Bd, y= these dimensions are different for each sensor type and are specified in the data sheet. min/max of D1 are specified in the datasheet. UNIT A2 A3 b c D1 e E1 F1 F2 F3 L L1 Θ mm 1.55 1.45 0.7 0.42 0.36 4.05 2.54 4.11 4.01 1.2 0.8 0.60 0.42 4.0 2.0 14.5 min 14.0 min 45° JEDEC STANDARD ANSI ISSUE ITEM NO. - - ISSUE DATE YY-MM-DD DRAWING-NO. ZG-NO. 10-04-29 06609.0001.4 ZG001009_Ver.07 © Copyright 2007 Micronas GmbH, all rights reserved Fig. 4–1: TO92UT-1 Plastic Transistor Standard UT package, 3 leads, spread Weight approximately 0.12 g Micronas July 25, 2013; DSH000160_002EN 13 HAL 2850 DATA SHEET A2 E1 Bd A3 A4 F1 D1 y Center of sensitive area 1 2 3 L F2 e b Θ c physical dimensions do not include moldflash. 0 solderability is guaranteed between end of pin and distance F1. 2.5 5 mm scale Sn-thickness might be reduced by mechanical handling. A4, Bd, y= these dimensions are different for each sensor type and are specified in the data sheet. min/max of D1 are specified in the datasheet. UNIT A2 A3 b c D1 e E1 F1 F2 L Θ mm 1.55 1.45 0.7 0.42 0.36 4.05 1.27 4.11 4.01 1.2 0.8 0.60 0.42 14.5 min 45° JEDEC STANDARD ANSI ISSUE ITEM NO. - - ISSUE DATE YY-MM-DD DRAWING-NO. ZG-NO. 10-04-29 06615.0001.4 ZG001015_Ver.07 Fig. 4–2: TO92UT-2 Plastic Transistor Standard UT package, 3 leads Weight approximately 0.12 g 14 July 25, 2013; DSH000160_002EN Micronas HAL 2850 DATA SHEET Fig. 4–3: TO92UA/UT: Dimensions ammopack inline, not spread Micronas July 25, 2013; DSH000160_002EN 15 HAL 2850 DATA SHEET Fig. 4–4: TO92UA/UT: Dimensions ammopack inline, spread 16 July 25, 2013; DSH000160_002EN Micronas HAL 2850 DATA SHEET 4.2. Soldering, Welding and Assembly Please check the Micronas Document “Guidelines for the Assembly of HAL Packages” for further information about solderability, welding and assembly, and second-level packaging. The document is available on the Micronas website or on the service portal. 4.3. Pin Connections and Short Descriptions Pin No. Pin Name Type 1 VSUP Supply Voltage 2 GND Ground 3 DIO IN/ OUT Short Description Digital IO PWM Output 1 VSUP 3 DIO 2 GND Fig. 4–5: Pin configuration 4.4. Dimensions of Sensitive Area 0.213 mm x 0.213 mm 4.5. Positions of Sensitive Area TO92UT-1/-2 A4 0.4 mm Bd 0.3 mm D1 4.05 0.05 mm H1 min. 22.0 mm, max. 24.1 mm y 1.55 mm nominal Micronas July 25, 2013; DSH000160_002EN 17 HAL 2850 DATA SHEET 4.6. Absolute Maximum Ratings Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this high-impedance circuit. All voltages listed are referenced to ground (GND). Symbol Parameter Pin Name Min. Max. Unit Comment TJ Junction Operating Temperature 40 1901) C not additive VSUP Supply Voltage VSUP 18 26.5 2) 40 3) V V not additive not additive VDIO IO Voltage DIO 0.5 26.5 2) V not additive Bmax Magnetic field unlimited T VESD ESD Protection VSUP, DIO 8.04) 8.04) kV 1) for 96h. Please contact Micronas for other 2) t < 5 min. 3) t < 5 x 500 ms 4) AEC-Q100-002 (100 pF and 1.5 k) temperature requirements 4.6.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for two years from the date code on the package. 18 July 25, 2013; DSH000160_002EN Micronas HAL 2850 DATA SHEET 4.7. Recommended Operating Conditions Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device. All voltages listed are referenced to ground (GND). Symbol Parameter Pin Name Min. Max. Unit VSUP Supply Voltage VSUP 4.5 17 V VDIO Output Voltage DIO 0 18 V IOUT Continuous Output Current DIO 20 mA for VDIO = 0.6 V VPull-Up Pull-Up Voltage DIO 3.0 18 V In typical applications VPull-Up, max = 5.5 V RPull-Up Pull-Up Resistor DIO (see Section 7.4. on page 31) 1) Remarks Depends on the temperature profile of the application. Please contact Micronas for life time calculations. CL Load Capacitance DIO 180 (see Section 7 .4. on page 31) pF NPRG Number of EEPROM Programming Cycles 100 cycles 0 °C < Tamb < 55 °C TJ Junction Operating Temperature1) 40 40 40 125 150 170 °C °C °C for 8000h (not additive) for 2000h (not additive) < 1000h (not additive) 1) Depends on the temperature profile of the application. Please contact Micronas for life time calculations. 4.8. Characteristics at TJ = 40 °C to +170 °C (for temperature type A), VSUP = 4.5 V to 17 V, GND = 0 V, at Recommended Operation Conditions if not otherwise specified in the column Conditions. Typical Characteristics for TJ = 25 °C and VSUP = 5 V.. Symbol Parameter Pin Name Min. Typ. Max. Unit Conditions ISUP Supply Current VSUP 12 19 mA IDIOH Output Leakage Current DIO 10 µA DIO 0.6 V 0.2 IOL = 5 mA 0.09 IOL = 2.2 mA Digital I/O (DIO) Pin VOL Output Low Voltage IOL = 20 mA TPERIOD PWM Period DIO 0.5 32 ms Customer programmable (see Table on page 25) DUTYRange Available Duty-Cycle Range DIO 0.78 99.22 % Min. and max. values depend on MDC register setting. Output Resolution DIO 16 bit Depending on selected PWM period and slew rate Micronas July 25, 2013; DSH000160_002EN 19 HAL 2850 DATA SHEET Symbol Parameter Pin Name Min. Typ. Max. Unit Conditions V/tfall Falling Edge Slew Rate DIO 1.4 2 2.6 V/µs SLEW = 2 Measured between 70% and 30%, VPull-Up = 5 V, RPull-UP = 1 k, CL = 470 nF 4.9 7 10.4 SLEW = 1 Measured between 70% and 30%, VPull-Up = 5 V, RPull-UP = 510 , CL = 220 pF 25 SLEW = 0 Measured between 30% and 70%, VPull-Up = 5 V, RPull-UP = 510 , CL = 220 pF 1.4 2 2.6 3.8 7 10.4 SLEW = 1 Measured between 30% and 70%, VPull-Up = 5 V, RPull-UP=510 , CL=220 pF 25 SLEW = 0 Measured between 30% and 70%, VPull-Up = 5 V, RPull-UP=510 , CL=220 pF V/trise_max Max. Rising Edge Slew Rate DIO V/µs SLEW = 2 Measured between 30% and 70%, VPull-Up = 5 V, RPull-UP = 1 k, CL = 470 nF tstartup Power-Up Time (time to reach stabilized output duty cycle) DIO Depends on customer programming. Please see (see Table 5–1 on page 24) ms fOSC16 Internal Frequency of 16 MHz Oscillator 16 MHz VSUPon Power-On Reset Level VSUP 3.7 4.15 4.45 V VSUPonHyst Power-On Reset Level Hysteresis VSUP 0.1 V VSUPOV Supply Over Voltage Reset Level VSUP 17 19.5 21 V VSUPOVHyst Supply Over Voltage Reset Level Hysteresis VSUP 0.4 V Outnoise Output noise (rms) DIO 1 2 LSB12 B = 0 mT, 100 mT range, 0.5 ms PWM period, TJ = 25 °C TO92UT Package Thermal resistance Rthja Junction to Ambient 235 K/W measured on 1s0p board Rthjc Junction to Case 61 K/W measured on 1s0p board Rthjs Junction to Solder Point 128 K/W measured on 1s1p board 20 July 25, 2013; DSH000160_002EN Micronas HAL 2850 DATA SHEET 4.9. Magnetic Characteristics at TJ = 40 °C to +170 °C, VSUP = 4.5 V to 17 V, GND = 0 V, at Recommended Operation Conditions if not otherwise specified in the column Conditions. Typical Characteristics for TJ = 25 °C and VSUP = 5 V. Symbol Parameter Pin Name Min. Typ. Max. Unit Conditions RANGEABS Absolute Magnetic Range of A/D Converter 60 100 110 % % of nominal RANGE Full Scale Non-Linearity DIO INL Nominal RANGE programmable from 40 mT up to 160 mT 0.25 0 0.25 % of full-scale RANGE = 1 (40 mT) 0.15 0 0.15 % of full-scale RANGE 2 (60 mT) ES Sensitivity Error over Junction Temperature Range DIO 1 0 1 % (see Section 4.9.1.) BOFFSET Magnetic Offset DIO 0.4 0 0.4 mT B = 0 mT, TA = 25 °C RANGE 80 mT BOFFSET Magnetic Offset Drift over DIO Temperature Range BOFFSET(T) BOFFSET(25 °C) 5 0 5 T/°C B = 0 mT RANGE 80 mT Micronas July 25, 2013; DSH000160_002EN 21 HAL 2850 DATA SHEET 4.9.1. Definition of Sensitivity Error ES ES is the maximum of the absolute value of 1 minus the quotient of the normalized measured value1) over the normalized ideal linear2) value: ES = max abs meas ------------ – 1 ideal TJmin, TJmax In the example shown in Fig. 4–6 on page 22 the maximum error occurs at 10 °C: 1) normalized to achieve a least-square-fit straight-line that has a value of 1 at 25 °C ES = 1.001 ------------- – 1 = 0.8% 0.993 2) normalized to achieve a value of 1 at 25 °C ideal 200 ppm/k 1.03 relative sensitivity related to 25 °C value least-square-fit straight-line of normalized measured data measurement example of real sensor, normalized to achieve a value of 1 of its least-square-fit straight-line at 25 °C 1.02 1.01 1.001 1.00 0.993 0.99 0.98 –50 –25 -10 0 25 50 75 100 125 junction temperature [°C] 150 175 Fig. 4–6: Definition of sensitivity error (ES) 22 July 25, 2013; DSH000160_002EN Micronas HAL 2850 DATA SHEET The HAL 2850 transmits the magnetic field information by sending a PWM signal. The native PWM periods can be set by the EEPROM bit field PERIOD. Native PWM periods are 0.512 ms, 1.024 ms,, 16.384 ms and 32.768 ms (see Table on page 25). A pulse width modulated (PWM) signal consists of successive square wave pulses. The information is coded in the ratio between high time “thigh” and low time “tlow”. The EEPROM field PERIOD_ADJ can be used to trim the PWM period in small steps. This feature enables variable PWM periods in between the natural periods (see Table on page 25). 5. The PWM Module t high duty cycle = --------------t period Table 5–1 describes the PWM interface timing. After reset, the output is recessive high. The transmission starts after the first valid Hall value has been calculated. In case of an overcurrent in the DIO output, the transmit transistor is switched off (high impedance). The transistor is re-enabled before transmitting a new pulse. The first PWM period after a reset or an overcurrent condition cannot be captured due to no edge at the beginning of the transmission. The output polarity can be configured by the flag OP in the EEPROM. According to the OP value, a PWM period starts either with a high pulse (OP = 0) or with a low pulse (OP = 1). Please note that if OP is set to 1, the output is recessive high until the output has been enabled (tOE has been elapsed). After the output has been enabled, it remains low until the transition within the first period (see Fig. 5–2). The slew rate can be configured by the bits SR in the EEPROM. See Table 5–1 for selectable slew rates. Note: Please consider at which edge a new period starts. When OP is set to zero, a new period starts with the rising edge and the period must be captured by triggering the rising edge. The PWM signal can be configured by the EEPROM bits PERIOD, PERIOD_ADJ (Trimming of native PWM periods), MDC (minimum/maximum duty cycle), SR (slew rate) and OP (output polarity) (see Section 5.1. on page 25). VSUP tstartup DIO tlow thigh tperiod tlow thigh tperiod Fig. 5–1: PWM interface startup timing Micronas July 25, 2013; DSH000160_002EN 23 HAL 2850 DATA SHEET VSUP tstartup DIO tOE thigh tlow thigh tlow tperiod tperiod Fig. 5–2: PWM interface startup timing for inverted output Table 5–1: PWM interface timing Symbol Parameter Min. Typ. Max. Unit Remark tstartup Startup Time1) 8 9 10 10 20 40 80 ms ms ms ms ms ms ms Period = 0.5 ms Period = 1 ms Period = 2 ms Period = 4 ms Period = 8 ms Period = 16 ms Period = 32 ms tOE Output Enable Time 60 1502) µs PWMJitter PWM Period Sample to Sample Jitter (RMS) 30 60 ns Period = 0.5 ms DUTYJitter PWM Duty Cycle Sample to Sample Jitter (RMS) 63 125 ns Period = 0.5, 100 mT RANGE, B = 0 mT, including noise tperiod PWM Period see Fig. 5–1 and Fig. 5–2 DUTY PWM High Duty Cycle thigh / tperiod PWM period is customer programmable % 1) Values are valid for deactivated power-on self test. 10 ms must be added when power-on self test is active. 2) 10 ms must be added when power-on self test is active. 24 July 25, 2013; DSH000160_002EN Micronas HAL 2850 DATA SHEET 5.1. Programmable PWM Parameter PWM Periods Table 5–2: Supported native PWM periods PWM Period Sample Frequency Typ. PERIOD Bit No. [4:2] [1] [0] [ms] [Hz] 0.512 1953 0 0 0 1.024 977 0 0 1 2.048 488 0 1 1 4.096 244 1 1 1 8.192 122 2 1 1 16.384 61 3 1 1 32.768 31 4 1 1 [LSB] max. Period, PERIOD_ADJ = 0 PWM period [µs] [ms] C0 for full magnetic range, MDC=0 [LSB] min. Period, PERIOD_ADJ = 255 magnetic range for C0 = 1, MDC=0 PWM period [%] [ms] resolution Period steps resolution EEPROM.PERIOD Table 5–3: Supported intermediate PWM period C0 for full magnetic range, MDC=0 [LSB] magnetic range for C0 = 1, MDC=0 [%] 0 1 0.512 12 0.9375 93.75 0.257 11 0.4395 43.95 1 2 1.024 13 0.9688 96.88 0.514 12 0.4707 47.07 3 4 2.048 14 0.9844 98.44 1.028 13 0.4863 48.63 7 8 4.096 15 0.9922 99.22 2.056 14 0.4941 49.41 11 16 8.192 16 0.9961 99.61 4.112 15 0.4980 49.80 15 32 16.384 16 0.9961 99.61 8.224 15 0.4980 49.80 19 64 32.768 16 0.9961 99.61 16.448 15 0.4980 49.80 Note: When the period is trimmed with the PERIOD_ADJ register, then either the measurable magnetic range is reduced or the resolution is reduced. The PWM period is faster than the sample rate when PERIOD_ADJ is greater than 0. Aliasing may occur due to double transmitted samples. Micronas July 25, 2013; DSH000160_002EN 25 HAL 2850 DATA SHEET Minimum Duty Cycle The minimum and maximum duty cycle is symmetrical to 50% duty cycle. The MDC register acts on the minimum and maximum duty cycle. The minimum and maximum duty cycle depend on the output slew rates and the PWM period (see Table 5–4). The minimum/maximum duty cycle can be calculated with the following equations: PWMPER16 PWMMIN = 216 (PERIOD_ADJ x 27) = (1 + MDC) x 29 PWMMAX PWMPERIOD = PWMPER16 PWMMIN = trunc(PWMPER16 / 2(16-R)) Definition: R: PWMMIN: PWMMAX: PWMPERIOD: PWMPER16: MDC: PERIOD_ADJ: PWM resolution in LSB (see Table ) minimum high time in LSB maximum low time in LSB PWM period in LSB PWM period in LSB for 16 bit resolution EEPROM value for adjusting min./max. duty cycle EEPROM value for adjusting the period The measured high duty cycle (DUTY) may differ from the internal high duty cycle (DUTYi) due of internal delays within the output logic, a difference between the rising and falling slope time, the threshold voltage of the external receiver; and other effects. Setting the clamping levels reduces the measurable magnetic range (C0 = 1). The full magnetic range can be used in case the slope coefficient C0 is used for compressing the range of HVAL. 26 July 25, 2013; DSH000160_002EN Micronas HAL 2850 DATA SHEET C0 = Ctarget/Cmeasured Two options are available: 1. Use full magnetic range with a reduced resolution or Ctarget: Target output sensitivity CmeasuredMeasured output sensitivity for default settings Example: Ctarget = 40% / 60 mT Cmeasured = 30% / 60 mT C0 = 0.667%/mT / 0.5%/mT = 1.334 2. full resolution with a reduced magnetic range. The full magnetic range can be addressed by using the equations below. Table 5–4: PWM period (PERIOD), slew rate (SR) and minimum duty cycle (MDC) Period Slew Rate VPULL-UP PWMmin @ R min. Duty Cycle Rec. Limit typ. typ. max. min. (MDC=0) max. (MDC=31) min. max. min. duty cycle MDC [µs] [V/µs] [V] [LSB] [LSB] [%] [%] [%] [LSB] 512 infinite (> 25) 18 32 1024 0.78 25 0.78 1) 0 8 7 3.13 3 2 7 3.13 3 infinite (> 25) 18 0.78 1) 0 8 7 1.56 1 2 7 1.56 1 infinite (> 25) 18 8 7 2 7 infinite (> 25) 18 8 7 2 7 infinite (> 25) 18 8 7 2 7 infinite (> 25) 18 8 7 2 7 infinite (> 25) 18 8 7 2 7 1024 2048 4096 8192 16384 32768 1) 64 2048 128 4096 0.78 0 256 8192 0.78 0 512 16384 0.78 0 512 16384 0.78 0 512 16384 0.78 0 An overcurrent may not be detected. Micronas July 25, 2013; DSH000160_002EN 27 HAL 2850 DATA SHEET 6. Programming of the Sensor tbbit HAL 2850 features two different customer modes. In Application Mode the sensor is providing a continuos PWM signal transmitting temperature compensated magnetic field values. In Programming Mode it is possible to change the register settings of the sensor. tbbit or logical 0 After power-up the sensor is always operating in the Application Mode. It is switched to the Programming Mode by a defined sequence on the sensor output pin. tbbit tbbit or 6.1. Programming Interface logical 1 In Programming Mode the sensor is addressed by modulating a serial telegram (BiPhase-M) with constant bit time on the output pin. The sensor answers with a modulation of the output voltage. tbhb tbhb tbhb tbhb Fig. 6–1: Definition of logical 0 and 1 bit A logical “0” of the serial telegram is coded as no level change within the bit time. A logical “1” is coded as a level change of typically 50% of the bit time. After each bit, a level change occurs (see Table 6–1). A description of the communication protocol and the programming of the sensor is available in a separate document (Application Note Programming HAL 2850). The serial telegram is used to transmit the EEPROM content, error codes and digital values of the magnetic field or temperature from and to the sensor. Table 6–1: Biphase-M frame characteristics of the host Symbol Parameter Min. Typ. Max. Unit tbbit (host) Biphase Bit Time 970 1024 1075 µs tbhb (host) Biphase Half Bit Time 0.45 0.5 0.55 tbbit (host) tbifsp (host) Biphase Interframe Space 3 tbbit (host) VOUTL Voltage for Low Level 5.8 6.3 6.6 V VOUTH Voltage for High Level 6.8 7.3 7.8 V VSUPPRG Supply Voltage During Programming 5.6 6.5 V Remark Table 6–2: Biphase-M frame characteristics of the sensor Symbol Parameter Min. Typ. Max. Unit tbbit (sensor) Biphase Bit Time 820 1024 1225 µs tbhb (sensor) Biphase Half Bit Time 0.5 tbbit (sensor) tbresp Biphase Response Time 1 5 tbbit (sensor) Slew Rate 28 2 July 25, 2013; DSH000160_002EN Remark V/µs Micronas HAL 2850 DATA SHEET 6.2. Programming Environment and Tools For the programming of HAL 2850 during product development and also for production purposes a programming tool including hardware and software is available on request. It is recommended to use the Micronas tool kit in order to easy the product development. The details of programming sequences are also available on request. 6.3. Programming Information For production and qualification tests, it is mandatory to set the LOCK bit after final adjustment and programming of HAL 2850. The LOCK function is active after the next power-up of the sensor. The success of the LOCK process should be checked by reading the status of the LOCK bit after locking and/ or by an analog check of the sensors output signal. Electrostatic Discharge (ESD) may disturb the programming pulses. Please take precautions against ESD and check the sensors error flags. Micronas July 25, 2013; DSH000160_002EN 29 HAL 2850 DATA SHEET 7. Application Note 7.2. EMC and ESD 7.1. Ambient Temperature For applications that cause disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended. The series resistor and the capacitor should be placed as closely as possible to the Hall sensor. Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). Please contact Micronas for detailed investigation reports with EMC and ESD results. T J = T A + T 7.3. Output Description At static conditions and continuous operation, the following equation applies: 7.3.1. How to Measure PWM Output Signal The HAL 2850 codes the magnetic field information in the duty cycle of a PWM signal. The duty cycle is defined as the ratio between the high time “thigh” and the period “tperiod” of the PWM signal (see Fig. 7–1). T = I SUP V SUP R thJX + I DIO V DIO R thJX For typical values, use the typical parameters. For worst case calculation, use the max. parameters for ISUP and Rth, and the max. value for VSUP from the application. The choice of the relevant RthJX-parameter (Rthja, Rthjc, or Rthjs) depends on the way the device is (thermally) coupled to its application environment. Note: Please consider at which edge a new period starts. When OP is set to zero, a new period starts with the rising edge and the period must be captured by triggering the rising edge. For the HAL 2850 the junction temperature TJ is specified. The maximum ambient temperature TAmax can be calculated as: T Amax = T Jmax – T VSUP tstartup DIO tlow thigh tperiod tlow thigh tperiod Fig. 7–1: Definition of PWM signal 30 July 25, 2013; DSH000160_002EN Micronas HAL 2850 DATA SHEET 7.4. Application Circuit Cwire: Capacity of the wire CINPUT: Input capacitance of the ECU Micronas recommends the following two application circuits for the HAL 2850. The first circuit is recommended when the sensor is powered with 5 V supply (see Fig. 7–2). The second circuit should be used for applications connected directly to the car’s battery with a pull-up to a 5 V line (see Fig. 7–3 on page 32). To avoid noise on the controller input pin, it is recommended to use only these two circuits. Vpull-up (max.): max. applied pull-up voltage, must be lower than the value specified in Section 4.7. on page 19 VDIOL (max.): max. DIO low voltage, it is recommended to use the value specified in Section 4.8. on page 19 IDIO: DIO current at VDIOL (max.) V/trise: selected rising edge slew rate, the max. value specified in Section 4.8. must be used V/tfall: selected falling edge slew rate, the max. value specified in Section 4.8. must be used Values of external components CVSUP = 47 nF CDIO = 180 pF Example for Calculating RL and CL (max.) The maximum load capacitor and minimum resistor is given by the following equation: CL RL = CDIO + Cwire + CINPUT = Rpull-up RL (min.) = ( Vpull-up (max.) VDIOL (max.) ) / (IDIO (CL x (V/tfall) CL (max.) = 0.4 Vpull-up (min.) / ( RL (V/trise)) Rpull-up: Pull-up resistor between DIO and Vpull-up CVSUP: Capacitance between the VSUP pin and GND CDIO: EMC protection capacitance on the DIO pin HAL2850 The application operates at following conditions: slew rate = 8 V/µs (typ.) Vpull-up = 5.5 V (max.) CL = 400 pF Calculation: RL (min.) = ( 5.5 V 0.8 V ) / (20 mA pF x 10.4 V/ µs) = 297 RL = 330 CL (max.) = 400 pF <= 0.4 4.5 V / ( 330 10.4 V/µs ) = 524 pF => The used CL is below the limit. ECU VBAT = Vpull-up (typ. 5 V) VSUP CVSUP GND GND CDIO Cwire Rpull-up CINPUT INPUT DIO Fig. 7–2: Application circuit for 5 V supply Micronas July 25, 2013; DSH000160_002EN 31 HAL 2850 DATA SHEET HAL2850 ECU VBAT = 12 V (typ.) VSUP Vpull-up = 5 V (typ.) CVSUP GND GND CDIO Cwire Rpull-up CINPUT INPUT DIO Fig. 7–3: Application circuit for battery and 5 V pull-up voltage Note: The external components needed to protect against EMC and ESD may differ from the application circuit shown and have to be determined according to the needs of the application specific environment. 32 July 25, 2013; DSH000160_002EN Micronas HAL 2850 DATA SHEET 8. Data Sheet History 1. Advance Information: “HAL 2850 Linear Hall-Effect Sensor with PWM Output”, Dec. 5, 2008, AI000144_001EN. First release of the advance information. 2. Advance Information: “HAL 2850 Linear Hall-Effect Sensor with PWM Output”, March 24, 2010, AI000144_002EN. Second release of the advance information. Major changes: • Electrical characteristics • Signal path width 3. Advance Information: “HAL 2850 Linear Hall-Effect Sensor with PWM Output”, July 9, 2010, AI000144_003EN. Third release of the advance information. Major changes: • Electrical and Magnetic Characteristics 4. Data Sheet: “HAL 2850 Linear Hall-Effect Sensor with PWM Output”, August 9, 2011, DSH000160_001EN. First release of the data sheet. Major changes: • Power-on Self Test (POST) details • Error detection and behavior • TO92UT package drawings • Electrical and magnetic characteristics 5. Data Sheet: “HAL 2850 Linear Hall-Effect Sensor with PWM Output”, July 25, 2013, DSH000160_002EN. Second release of the data sheet. Major changes: • Temperature type K removed • Package drawings updated • Magnetic Characteristics over Temperature updated • Power-on Self Test Coverage updated Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg P.O. Box 840 D-79008 Freiburg, Germany Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: [email protected] Internet: www.micronas.com 33 July 25, 2013; DSH000160_002EN Micronas