, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MTP3N60
MTP3N60FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
MTP3N60
MTP3N60FI
VDSS
RDS(on)
ID
600 V
600 V
< 2.5Q
< 2.5 Q.
3.9 A
2.5 A
TYPICAL RDS(on) = 2n
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100QC
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
. HIGH CURRENT, HIGH SPEED SWITCHING
. SWITCH MODE POWER SUPPLIES (SMPS)
. CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
TO-220
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
D
(2)
ft (1)
S(3)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
MTP3N60
VDS
VDGR
VGS
Unit
MTP3N60FI
Drain-source Voltage (VGS = 0)
600
V
Drain- gate Voltage (Res = 20 K£i)
600
V
Gate-source Voltage
± 20
V
ID
Drain Current (continuous) at T c = 25 °C
3.9
2.5
A
ID
Drain Current (continuous) at T c = 100 °C
2.4
1.5
A
!DM(»)
Drain Current (pulsed)
14
14
A
Total Dissipation at Tc = 25 °C
100
35
W
Derating Factor
0.8
0.28
W/°C
V ISO
Insulation Withstand Voltage (DC)
—
2000
Tstg
Storage Temperature
Plot
Tj
Max. Operating Junction Temperature
V
-65 to 150
°C
150
°C
(•) Pulse width limited by safe operating area
NJ Semi-Conductors reservesThe right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
MTP3N60/FI
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Rthj-amb
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
IM he- sink
TI
Max
TO-220
ISOWATT220
1.25
3.57
°C/W
62.5
0.5
300
°c/w
°c/w
°c
Max Value
Unit
AVALANCHE CHARACTERISTICS
Parameter
Symbol
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, 5 < 1%)
3.9
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, 8 < 1%)
300
mj
7.7
mJ
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 °C, pulse width limited by T, max, 5 < 1%)
2.4
A
EAR
IAR
ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified)
OFF
Symbol
V(BR)DSS
loss
IGSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
! D = 250|aA
VGS=0
Zero Gate Voltage
VDS = Max Rating
Drain Current (V G s = 0) VDS = Max Rating x 0.8
Gate-body Leakage
Current (V D s = 0)
Min.
Typ,
Max.
600
Unit
V
TC=125°C
VGS = + 20 V
25
250
HA
HA
± 100
nA
ON(*
Symbol
VGS(th)
RDS(on)
lD(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 1mA
Static Drain-source On VGS = 10V
Resistance
On State Drain Current
VDS
>
Min.
Typ.
Max.
Unit
2
3
4.5
V
2
2.5
n
I D = 1.5 A
3.9
b(on) X RDS(on)max
A
V Q S = 10 V
DYNAMIC
Symbol
9fs (*)
Ciss
Coss
Crss
Parameter
Test Conditions
Forward
Transconductance
VDS
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V D s = 25 V
>
ID(OH) X RoS(on)max
f = 1 MHz
ID = 1.5 A
VGS= 0
Min.
i Typ-
1.5
2.6
560
90
40
Max.
Unit
S
800
130
55
pF
pF
PF
MTP3N60/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Parameter
Symbol
tr
Turn-on Current Slope
(di/dt)on
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
Win.
Test Conditions
V D D = 2 2 5 V ID = 2. 5 A
R G = 15 Q
VGS = 10 V
(see test circuit, figure 3)
VDD = 4 8 0 V ID = 4 A
RG= 15 n
VGS = 10 V
(see test circuit, figure 5)
VDD = 480 V ID = 4 A VGS- 1 0 V
Turn-on Time
Rise Time
td(on)
Typ.
Max.
Unit
45
33
60
42
ns
ns
200
A/(js
43
6
21
55
nC
nC
nC
SWITCHING OFF
Parameter
Symbol
Test Conditions
Off-voltage Rise Time
Fall Time
Cross-over Time
tr(Voff)
tf
te
Min.
Typ.
VDD = 4 8 0 V ID = 4 A
R G = 15 Q VGS = 10 V
(see test circuit, figure 5)
rMax.
Unit
35
40
60
45
55
75
ns
ns
ns
Typ.
Max.
Unit
3.9
14
A
A
2
V
SOURCE DRAIN DIODE
Symbol
Parameter
ISD
ISDM(')
VSD(*)
ISD = 3.9 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
trr
Qrr
IRRM
Min.
Test Conditions
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
VGS = 0
I SD = 4 A
di/dt = 100 A/us
VDD = 100 V
Tj = 150°C
(see test circuit, figure 5)
420
ns
3.7
uC
18
A
(*) Pulsed: Pulse duration = 300 us, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
:it=
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D.C. OPEF ATION
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100ms
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