Una. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 15 AMPERE POWER TRANSISTORS NPN SILICON MJE1660, MJE1661 40-60 VOLTS 90 WATTS SILICON MEDIUM-POWER TRANSISTORS . designed for use in power amplifier and switching applications. High Collector Current 1C = 15 Adc High DC Current Gain = 1 0 ( M i n ) @ l c = 15 Adc -«-B-»- u r. ^- ^f f&i ~~i \ MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Total Power Dissipation @ TC ™ 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol MJE1660 MJE16K1 Unit V CEO 40 60 Vdc VCB VEB >c IB PD 40 60 Vdc Tj. T stg Jt° Hoi-*- RI ± —* t" •• "J-j c. 5.0 Vdc DIM 15 Adc A B 5.0 Adc 90 072 Watts -65 to +150 °C C D F G H J K W/°C M Q R THERMAL CHARACTERISTICS Characteristics Thermal Resistance. Junction to Case t Hh 1~5"3 Symbol Max Unit "JC 1 39 °C/W U V MILLIMETERS WIN MAX 16.13 12.57 3.18 109 3.51 42 267 0.813 15.11 9° 470 1.91 622 203 M /i 1638 12.83 3.43 124 3.76 BSC 2.92 Q.864 16.38 FYP 4.95 2.16 648 - \ uk t - ' -7 K * -UUj STYLE 2 PIN ( . E M I T T E R 2 COLLECTOR 3. BASE INCHES MIN MAX 0.636 0495 0.125 0.043 0.138 0.16 0.105 0.032 0.596 9° 0.185 0.075 0.245 0.080 0.645 0.505 0.135 0.049 0.146 BSC 0.115 0.034 0645 'YP 0.195 J 0.085 ^0.255 - VVhen mounting the d*vic*. torqu* not t o exceed 8 0 in.-lb. 1f lead bending is required, use suitable c lamps or other support* between tran9 istor case and point of bend. TO-225AB TYPE Quality Semi-Conductors ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector Emitter Sustaining Voltage HI ( l c = 200mAdc. IB = 0) Symbol Collector Cutoff Current (V CB = 40 Vdc, IE - 0) (V CB = 60 Vdc. IE - 0) Emitter Cutoff Current (V BE = 5.0 Vdc, IE - 0) Max 40 60 - 'CEO _ mAdc 1.0 mAdc 'CES MJE 1660 MJE 1661 - 0.7 0.7 - 0.7 0.7 - 1.0 20 10 100 - 1.8 — 2.5 3.0 - 25 - mAdc 'CBO .MJE 1660 MJE 1661 Unit Vdc v CEO(sus) MJE 1660 MJE1661 Collector Cutoff Current (V CE = 30 Vdc, IB = 0) Collector Cutoff Current (VCE = 40 Vdc. VBE = 0) (VCE ' 60 Vdc, V BE = Ol Win mAdc 'EBO ON CHARACTERISTICS DC Current Gam (11 (lc = 5.0 Adc, VCE " 4.0 Vdc) (l c = 15 Adc, VCE = 4.0 Vdcl _ "FE Collector-Emitter Saturation Voltage HI ( l c = 15 Adc, IB = 1.5 Adc) v CE(sat) Base-Emitter on Voltage (1) dc = 15 Adc, VCE = 4.0 Vdc) v BE(on) Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product d C = 1.0 Adc, VCE = 10 Vdc, f = 1.0MHz) <T Small-Signal Current Gain <l c = 1.0 Adc, V CE = 10 Vdc, f = 1.0 kHz) hfe <1| Pulse Test: Pulse Width< 3OO MS. Duty Cycle^ 2.0%. MHz _